Growth and Characterization of CuInS₂ Films grown by Rf Ion-Plating

Abstract

Films of the chalcopyrite semiconductor C u I n S 2 were grown by rf ion-plating at a relatively low substrate temperature of 400° C, which allows us to use a large size inexpensive glass substrate, for various levels of substrate bias, ranging from +50 V to -50 V. The Cu and In compositions were controlled by varying the electron beam power of the Cu2S and In2S3 sources. There were significant differences in the surface morphology and crystallinity between films prepared under either negatively biased or floating conditions and films prepared under either positively biased or grounded conditions. Single phase CuInS2 films of good quality were obtained when the substrate was subjected to the floating conditions. Cu ions seem to play a very important role in the growth of Cu x S y which acts as an accelerator for growing good crystalline CuInS2 at a relatively low temperature.

Post-growth treatment effects on properties of CuInS2thin films deposited by RF reactive sputtering

“…Similar to Cu x Se segregating on the surface of CuInSe 2 thin films [19,20], Cu x S segregates are generally observed on the surface of CuInS 2 films [21,22]. It is well known, however, that KCN is very effective in removing such binary Cu compounds from the surface of ternary Cu chalcopyrites [23].…”

Pulsed-Spray Radiofrequency Plasma Enhanced Chemical Vapor Deposition of CuInS2 Thin Films

“…Current methods include co-evaporation, rf-magnetron sputtering, spray pyrolysis, rf-ion plating, and metalorganic vapor phase epitaxy [6][7][8]. Chalcopyrites are more radiation-hard than silicon photovoltaic materials [9], and they are therefore more appropriate for use in non-terrestrial applications.…”

The Effect of Acceleration Voltages on the Preparation of CuInSe2 Thin Films by Ionized Cluster Beam Technique

“…To lower the processing temperature, we have attempted to adopt techniques that use ions in the preparation of CuInSe 2 -based films; i.e., the ionized cluster beam (ICB) technique [4][5][6][7] and the ion plating technique. 8) In the ICB technique, [9][10][11] the effects of ionized beam bombardment the charge of ionized particles are utilized. The kinetic energy of ionized clusters can be controlled by acceleration voltage, and the migration effect is enhanced with increasing in acceleration voltage.…”