Growth and characterization of cubic InxGa1−xN epilayers on two different types of substrate

Pacheco‐Salazar, D. G.; Li, S F; Cerdeira, F.; Menêses, E.A.; Leite, J. R.; Scolfaro, L. M. R.; As, D. J.; Lischka, K.

doi:10.1016/j.jcrysgro.2005.07.049

Cited by 14 publications

(7 citation statements)

References 14 publications

(16 reference statements)

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“…The present identification of the Raman peaks has been performed based on previous results. 27,28 In the backscattering configuration and for a perfect crystal, the LO component of the c-GaN and the E2 modes of the h-GaN are Raman allowed, while the TO component for the c-GaN is Raman forbidden. As described in Ref.…”

Section: Resultsmentioning

confidence: 99%

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Magnetic and structural properties of Fe-implanted cubic GaN

Righetti

Gratens

Chitta

et al. 2016

Journal of Applied Physics

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In this article, we report on structural and magnetic properties of cubic GaN epitaxial layers implanted with Fe ions and subsequently subjected to thermal annealing. The epitaxial quality of the layers was studied by X-ray diffraction rocking curves (ω-scans) and Raman spectroscopy. The results show that the implantation damages the crystal structure producing an expansion of the lattice parameter in the implanted region. These damages are partially removed by the thermal treatment. Room temperature ferromagnetism is observed for the sample implanted with a dose of 1.2 × 1016 cm−2, while samples implanted with 2.4 × 1016 cm−2 show a coexistence of ferromagnetism and paramagnetism due to disperse Fe3+. Thermal annealing changes these magnetic properties. For the low dose sample, the ferromagnetism is converted into paramagnetism while for the high dose we observed an enhancement of the ferromagnetic contribution characterized by a superparamagnetism behavior attributed to Fe-based particles.

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Section: Resultsmentioning

confidence: 99%

“…As described in Ref. 28, the experimental observation of the TO mode of the c-GaN can be attributed to a lack of crystalline quality of the epitaxial layer, and the intensity ratio (I TO /I LO ) between the TO and LO peaks can be used to test it. For sample Ref2a, we have estimated I TO /I LO ¼ 0.1.…”

Section: Resultsmentioning

confidence: 99%

Magnetic and structural properties of Fe-implanted cubic GaN

Righetti

Gratens

Chitta

et al. 2016

Journal of Applied Physics

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“…The choice of substrate is vital to ensure zincblende GaN growth. The main substrates that have been studied include cubic GaAs (001) (by MBE [10][11][12][13][14] and MOVPE [15][16][17][18][19][20][21]), 3C-SiC (by MBE [22][23][24][25][26] and MOVPE [27]), 3C-SiC on Si by MBE [28][29][30][31][32][33], patterned 3C-SiC on Si [34] and patterned Si [35][36][37] substrates. Some of the substrate properties to consider are lattice matching and difference in thermal expansion coefficient with zincblende GaN and cost.…”

Section: Zincblende Gan Growth Methodsmentioning

confidence: 99%

Cubic zincblende gallium nitride for green-wavelength light-emitting diodes

Lee

2017

Materials Science and Technology

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Gallium nitride (GaN)-based light-emitting diodes (LEDs) are highly energy efficient and their widespread usage in lighting can induce significant worldwide electricity savings. To achieve white and colour-tuneable lighting, the mixing of light from red-, blue- and green-wavelength LEDs is desired. At present, the efficiency of green-wavelength LEDs is only about half of that of red- and blue-wavelength LEDs, which is also known as the ‘green gap’ problem. Cubic zincblende GaN has the potential to bridge the ‘green gap’ due to the theoretical absence of internal electric fields that plague the commonly used c-plane hexagonal wurtzite structure. This review first looks at the various methods of achieving metastable zincblende GaN, and examines the crystal defects present. Then the different components towards a full zincblende GaN LED structure, including p- and n-type doping, zincblende InGaN and AlGaN on GaN heterostructures, together with the problems that need to be overcome to achieve green-wavelength emissions are reviewed. This review was submitted as part of the 2017 Materials Literature Review Prize of the Institute of Materials, Minerals and Mining run by the Editorial Board of MST. Sponsorship of the prize by TWI Ltd is gratefully acknowledged

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“…(8)- (11). The dielectric functions of the hexagonal domains A, B, C, and D can be obtained by rotation of ε WZ,(0001) using Euler angles ϕ and ϑ,…”

Section: B Mixed-phase Infrared Dielectric Function Modelmentioning

confidence: 99%

Assessing structural, free-charge carrier, and phonon properties of mixed-phase epitaxial films: The case of InN

Xie

Schubert²,

et al. 2014

Phys. Rev. B

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We develop and discuss appropriate methods based on x-ray diffraction and generalized infrared spectroscopic ellipsometry to identify wurtizte and zinc-blende polymorphs, and quantify their volume fractions in mixed-phase epitaxial films taking InN as an example. The spectral signatures occurring in the azimuth polarization (Müller matrix) maps of mixed-phase epitaxial InN films are discussed and explained in view of polymorphism (zinc-blende versus wurtzite), volume fraction of different polymorphs and their crystallographic orientation, and azimuth angle. A comprehensive study of the structural, phonon and free electron properties of zinc-blende InN films containing inclusions of wurtzite InN is also presented. Thorough analysis on the formation of the zinc-blende and wurtzite phases is given and the structural evolution with film thickness is discussed in detail. The phonon properties of the two phases are determined and discussed together with the determination of the bulk free-charge carrier concentration, and electron accumulation at the mixed-phase InN film surfaces.

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Growth and characterization of cubic InxGa1−xN epilayers on two different types of substrate

Cited by 14 publications

References 14 publications

Magnetic and structural properties of Fe-implanted cubic GaN

Magnetic and structural properties of Fe-implanted cubic GaN

Cubic zincblende gallium nitride for green-wavelength light-emitting diodes

Assessing structural, free-charge carrier, and phonon properties of mixed-phase epitaxial films: The case of InN

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