Growth and characterization of Cu–Ni–Sn–S films electrodeposited at different applied potentials

Khouja, Outman El; Nouneh, Khalid; Touhami, M. Ebn; Matei, Elena; Stancu, V.; Enculescu, Monica; Gâlcă, A.C.

doi:10.1007/s10854-023-10173-8

“…From the data shown in Figure 5, it is clear that all these materials actively absorb light even at low photon energies, namely Cu2NiSnS4 is sensitive even to rays with an energy of 0.7 eV. Cu2NiSiS4 also begins to be activated in the energy range above 1.3 eV, having the highest photoconductivity when absorbing short-wavelength radiation [64][65][66][67][68][69].…”

Section: Resultsmentioning

confidence: 99%

Analysis of the Optical Properties and Electronic Structure of Semiconductors of the Cu2NiXS4 (X = Si, GE, Sn) Family as New Promising Materials for Optoelectronic Devices

Nematov

2024

Preprint

0

View full text Add to dashboard Cite

In this work, the optoelectronic characteristics of kesterites of the Cu2NiXS4 system (X = Si, Ge, Sn) were studied. The electronic properties of the Cu2NiXS4 (X = Si, Ge, Sn) system were studied using first-principles calculations within the framework of density functional theory. For calculations, ab initio codes VASP and Wien2k were used. The high-precision modified Beke-Jones (mBJ) functional and the hybrid HSE06 functional were used to estimate the bandgap, electronic and optical properties. Calculations have shown that when replacing Si with Ge and Sn, the band gap decreases from 2.58 eV to 1.33 eV. Replacing Si with Ge and Sn reduces the overall density of electronic states. In addition, new deep (shallow) states are formed in the band gap of these crystals, which is confirmed by the behavior of their optical properties. The obtained band gap values are compared with existing experimental measurements, demonstrating good agreement between HSE06 calculations and experimental data. The nature of changes in the dielectric constant, absorption capacity and optical conductivity of these systems depending on the photon energy has also been studied. The statistical dielectric constant and refractive index of these materials were found. The results will help increase the amount of information about the properties of the materials under study and will allow the use of these compounds in a wider range of optoelectronic devices, in particular, in solar cells and other devices that use solar radiation to generate electric current.

show abstract

“…From the data shown in Figure 5, it is clear that these materials actively absorb light even at low photon energies, namely Cu 2 NiSnS 4 is sensitive even to rays with an energy of 0.7 eV. Cu 2 NiSiS 4 also begins to be activated in the energy range above 1.3 eV, having the highest photoconductivity when absorbing short-wavelength radiation [64][65][66][67][68][69][70].…”

Section: As Shown Inmentioning

confidence: 99%

Analysis of the Optical Properties and Electronic Structure of Semiconductors of the Cu2NiXS4 (X = Si, Ge, Sn) Family as New Promising Materials for Optoelectronic Devices

Nematov

2024

JOPR

6

0

View full text Add to dashboard Cite

In this work, the optoelectronic characteristics of kesterites of the Cu2NiXS4 system (X = Si, Ge, Sn) were studied. The electronic properties of the Cu2NiXS4 (X = Si, Ge, Sn) system were studied using first-principles calculations within the framework of density functional theory. For calculations, ab initio codes VASP and Wien2k were used. The high-precision modified Beke-Jones (mBJ) functional and the hybrid HSE06 functional were used to estimate the bandgap, electronic and optical properties. Calculations have shown that when replacing Si with Ge and Sn, the band gap decreases from 2.58 eV to 1.33 eV. Replacing Si with Ge and Sn reduces the overall density of electronic states. In addition, new deep (shallow) states are formed in the band gap of these crystals, which is confirmed by the behavior of their optical properties. The obtained band gap values are compared with existing experimental measurements, demonstrating good agreement between HSE06 calculations and experimental data. The nature of changes in the dielectric constant, absorption capacity and optical conductivity of these systems depending on the photon energy has also been studied. The statistical dielectric constant and refractive index of these materials were found. The results will help increase the amount of information about the properties of the materials under study and will allow the use of these compounds in a wider range of optoelectronic devices, in particular, in solar cells and other devices that use solar radiation to generate electric current.

show abstract

From non-stoichiometric CTSe to single phase and stoichiometric CZTSe films by annealing under Sn+Se atmosphere

Zaki

¹

,

Sava

²

,

Şimăndan

³

et al. 2023

Ceramics International

View full text Add to dashboard Cite

Growth and characterization of Cu–Ni–Sn–S films electrodeposited at different applied potentials

Cited by 5 publications

References 49 publications

Analysis of the Optical Properties and Electronic Structure of Semiconductors of the Cu2NiXS4 (X = Si, GE, Sn) Family as New Promising Materials for Optoelectronic Devices

Analysis of the Optical Properties and Electronic Structure of Semiconductors of the Cu2NiXS4 (X = Si, GE, Sn) Family as New Promising Materials for Optoelectronic Devices

Analysis of the Optical Properties and Electronic Structure of Semiconductors of the Cu2NiXS4 (X = Si, Ge, Sn) Family as New Promising Materials for Optoelectronic Devices

From non-stoichiometric CTSe to single phase and stoichiometric CZTSe films by annealing under Sn+Se atmosphere

Contact Info

Product

Resources

About