Growth and characterization of Cu(InA1)Se2 by vacuum evaporation

Itoh, Fumitake; Saitoh, Osamu; Kita, Masao; Nagamori, Hisatoshi; Oike, Hiromi

doi:10.1016/s0927-0248(97)00132-3

Cited by 45 publications

(34 citation statements)

References 8 publications

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“…The bandgap, E g , for the films can be determined from the extrapolation of the linear portion of each curve. An increase in E g was clearly observed with increasing Al content, which is also in good agreement with previous studies on Cu(In,Al)Se 2 thin films [13,16]. The bandgaps measured are 1.22, 1.35, 1.37, 1.45, and 1.47 eV for Al (0 %), Al (4 %), Al (7 %), Al (10 %), and Al (12 %), respectively.…”

Section: Resultssupporting

confidence: 92%

“…Their results indicated significantly improved CIGS grain structures and device performance. In addition, replacing Ga with Al in CuInSe 2 solar cells to increase the bandgap of the absorber layer, and subsequently enhance the device efficiency, has also been studied by different research groups [13][14][15][16][17]. Since the bandgaps of CuInSe 2 and CuAlSe 2 have been reported to be 1.04 and 2.7 eV [18,19], respectively, it can be expected that Cu(In 1-x Al x )Se 2 follows the same trend as CIGS whose bandgap may be tailored as x varies from 0 to 1.…”

Section: Introductionmentioning

confidence: 99%

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Properties of Cu(In,Ga,Al)Se2 thin films fabricated by pulsed laser deposition

Chen

Cao

Hameed

et al. 2014

J Mater Sci: Mater Electron

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Cu(In,Ga,Al)Se 2 (CIGAS) thin films were investigated as an alternative absorber layer to Cu(In,Ga)Se 2 (CIGS). CIGAS thin films were prepared by pulsed laser deposition on SiO 2 /Si(100) and glass substrates at 150°C with different Al contents. The compositions of all films were measured by electron probe micro-analyzer. X-ray diffraction studies indicate that all the films are oriented along the [112] direction and that the (112) peak shifts to higher 2h value with increasing Al content. Scanning electron microscopy images show that dense and well-defined grains are formed as Al is incorporated into CIGS. Atomic force microscopy images indicate that the grain sizes and the roughness of the thin films decrease with increasing Al content. The bandgap of CIGAS thin films was determined from the optical spectra and was found to increase with increasing Al content.

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Section: Resultssupporting

confidence: 92%

Section: Introductionmentioning

confidence: 99%

Properties of Cu(In,Ga,Al)Se2 thin films fabricated by pulsed laser deposition

Chen

Cao

Hameed

et al. 2014

J Mater Sci: Mater Electron

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“…Existence of a continuous solid solution for the CuInSe 2 -CuAlSe 2 system has been established in crystal-form [109,110,111] and in thin film-form [112]. Powder diffraction studies have showed that the lattice parameters vary linearly with 'x' in CuIn 1-x Al x Se 2 [110,111].…”

Section: Cu(inal)sementioning

confidence: 99%

Optimization of Processing and Modeling Issues for Thin-Film Solar Cell Devices; Annual Report, 3 February 1997-2 February 1998

Birkmire¹,

Phillips²,

Shafarman³

et al. 1998

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SummaryThe overall mission of the Institute of Energy Conversion is the development of thin film photovoltaic cells, modules, and related manufacturing technology and the education of students and professionals in photovoltaic technology. The objectives of this four-year NREL subcontract are to advance the state of the art and the acceptance of thin film PV modules in the areas of improved technology for thin film deposition, device fabrication, and material and device characterization and modeling, relating to solar cells based on CuInSe 2 and its alloys, on a-Si and its alloys, and on CdTe. CuInSe 2 -based Solar Cells High Bandgap CuInSe 2 AlloysCuInSe 2 has a bandgap of 1.0 eV and most Cu(InGa)Se 2 -based devices have absorber layers with Ga/(In+Ga) ≈ 0.25 which gives a bandgap of 1.15 eV and results in devices with open circuit voltages < 0.65V. Higher Ga concentrations to increase the Cu(InGa)Se 2 bandgap result in a trade-off of higher open circuit voltage and lower short circuit current which may allow increased cell efficiency. Further, module performance should be improved due to lower resistive losses, thinner ZnO with less optical loss and/or greater interconnect spacing with reduced associated arearelated losses.We have previously demonstrated Cu(InGa)Se 2 solar cells with 15% efficiency for Ga/(In+Ga) ≤ 0.5 or bandgap (Eg) ≤ 1.3 eV [101,102]. With higher bandgap a decrease in cell efficiency was shown to be caused by poor collection of light generated minority carriers in the Cu(InGa)Se 2 absorber layers and in this report, we have expanded the characterization of Cu(InGa)Se 2 devices with increasing Ga content and bandgap. Further, we have begun to investigate other CuInSe 2 -based alloy materials, CuInS 2 and Cu(InAl)Se 2 , which may provide alternative means to achieve improved device performance with Eg > 1.3 eV. Reduced Cu(InGa)Se 2 Deposition Temperature and ThicknessThere are many technical issues which need to be addressed to effectively enable the transfer of Cu(InGa)Se 2 deposition and device fabrication technology from the laboratory to manufacturing scale. In general, these issues provide a means to reduce thin film semiconductor process costs. Shorter deposition time can be achieved with reduced film thickness and increased deposition rate. Thinner absorber films reduce the total amount of material used and allow faster process throughput. The minimum thickness of the Cu(InGa)Se 2 absorber layer may be determined by the nucleation of the film to form a continuous layer or by the film morphology. From a device perspective, the minimum thickness may be determined by the minority carrier diffusion length and optical absorption coefficient of the Cu(InGa)Se 2 or the ability to incorporate optical confinement.Lower substrate temperature (T ss ) can lower processing costs by reducing thermally induced stress on the substrate, allowing faster heat-up and cool-down, and decreasing the heat load and stress on the entire deposition system. In addition, with lower substrate temperature, stress on ...

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“…CIAS thin films have been prepared by several techniques including co-evaporation [8,9], one step RF magnetron sputtering [10], chemical bath deposition (CBD) [11] and sequential deposition methods [12][13][14]. The various types of annealed films have a great effect on their structural, morphological and optical properties.…”

Section: Introductionmentioning

confidence: 99%

Effect of Annealing on the Structural and Optical Properties of CuIn1–xAlxS2 thin Films

Smaïli¹

2011

MSA

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Growth and characterization of Cu(InA1)Se2 by vacuum evaporation

Cited by 45 publications

References 8 publications

Properties of Cu(In,Ga,Al)Se2 thin films fabricated by pulsed laser deposition

Properties of Cu(In,Ga,Al)Se2 thin films fabricated by pulsed laser deposition

Optimization of Processing and Modeling Issues for Thin-Film Solar Cell Devices; Annual Report, 3 February 1997-2 February 1998

Effect of Annealing on the Structural and Optical Properties of CuIn<sub>1–x</sub>Al<sub>x</sub>S<sub>2</sub> thin Films

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Growth and characterization of Cu(InA1)Se2 by vacuum evaporation

Cited by 45 publications

References 8 publications

Properties of Cu(In,Ga,Al)Se2 thin films fabricated by pulsed laser deposition

Properties of Cu(In,Ga,Al)Se2 thin films fabricated by pulsed laser deposition

Optimization of Processing and Modeling Issues for Thin-Film Solar Cell Devices; Annual Report, 3 February 1997-2 February 1998

Effect of Annealing on the Structural and Optical Properties of CuIn&lt;sub&gt;1–x&lt;/sub&gt;Al&lt;sub&gt;x&lt;/sub&gt;S&lt;sub&gt;2&lt;/sub&gt; thin Films

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Effect of Annealing on the Structural and Optical Properties of CuIn<sub>1–x</sub>Al<sub>x</sub>S<sub>2</sub> thin Films