Growth and characterization of Bi2Se3 crystals by chemical vapor transport

Jiao, Wen‐He; Jiang, Shuai; Feng, Chunmu; Xu, Zhu-An; Cao, Guanghan; Xu, Min; Feng, D. L.; Yamada, Atsuo; Matsubayashi, K.; Uwatoko, Yoshiya

doi:10.1063/1.4727957

Cited by 11 publications

(11 citation statements)

References 33 publications

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“…One can see many reflections of the type 00l (l being a multiple of three as expected for a hexagonal crystal) in the PXRD spectrum of Fig. 4(b), in good agreement with the reported XRD spectra (Cao et al, 2013;Jiao et al, 2012). This further indicates the layered structure with Bi and Se atoms arranged in the form of Se(1)-Bi-Se(2)-Bi-Se(1) normal to the c axis.…”

Section: X-ray Diffraction Analysissupporting

confidence: 86%

Enhancement of thermoelectric figure of merit in Bi₂Se₃crystals through a necking process

et al. 2015

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The growth of good quality bulk single crystals of bismuth selenide by employing a high-temperature vertical Bridgman technique with a specially designed ampoule having a provision for a necking process is reported. Several growth experiments were performed and reproducible results were obtained. The crystal structure and lattice dimensions were confirmed by powder X-ray diffraction (PXRD), the bulk crystalline perfection was assessed using highresolution X-ray diffractometry and the good bulk crystalline perfection with an indication of layered structure was confirmed. Transmission electron microscopy (TEM) was carried out for the grown single crystal and confirmed the layered structure. High-resolution TEM (HRTEM) was also used to further assess the crystalline perfection. The direct measurement of d spacing obtained from HRTEM imaging was found to be in good agreement with the data obtained from PXRD. The thermal behavior was examined by differential scanning calorimetry and a sharp melting was found at 983 K, which revealed the purity of the bismuth selenide. The Seebeck coefficient and electrical and thermal conductivities were measured, and a thermoelectric figure of merit was calculated in order to assess the suitability of the crystal for thermoelectric applications such as refrigeration and portable power generation. Nanoindentation analysis was also performed for the first time.

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Section: X-ray Diffraction Analysissupporting

confidence: 86%

Enhancement of thermoelectric figure of merit in Bi₂Se₃crystals through a necking process

et al. 2015

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“…10 In addition, the Majorana fermions at the interface of the TI and the superconducting materials may be exploited in topological quantum computation. [11][12][13] Because of the theoretical signicance and promising applications, the TIs have attracted extensive investigation.…”

Section: Introductionmentioning

confidence: 99%

The dimensional crossover of quantum transport properties in few-layered Bi₂Se₃ thin films

Yang

Wang

et al. 2019

Nanoscale Adv.

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“…In the last years tremendous efforts were realized in order to produce this kind of materials as thin films, nanowires, nanocrystals 19 etc., using different techniques such as molecular beam epitaxy (MBE) 20,21 , metalorganic chemical vapour deposition 22 including mechanical exfoliation 23,24 or chemical vapour transport 25 . Nevertheless, the preparation of a large area of Bi 2 Se 3 films and the possibility to obtain a variety of morphology by the combination with electron beam lithography techniques is still a challenge.…”

Section: Introductionmentioning

confidence: 99%

Topological insulator thin films starting from the amorphous phase-Bi2Se3 as example

Barzola‐Quiquia

Lehmann²,

Stiller³

et al. 2015

Journal of Applied Physics

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We present a new method to obtain topological insulator Bi2Se3 thin films with a centimeter large lateral length. To produce amorphous Bi2Se3 thin films we have used a sequential flash-evaporation method at room temperature. Transmission electron microscopy has been used to verify that the prepared samples are in a pure amorphous state. During annealing the samples transform into the rhombohedral Bi2Se3 crystalline strcuture which was confirmed using X-ray diffraction and Raman spectroscopy. Resistance measurements of the amorphous films show the expected Mott variable range hopping conduction process with a high specific resistance compared to the one obtained in the crystalline phase (metallic behavior). We have measured the magnetoresistance (MR) and the Hall effect (HE) at different temperatures between 2 K and 275 K. At temperatures T 50 K and fields B 1 T we observe weak anti-localization in the MR; the Hall measurements confirm the n-type character of the samples. All experimental results of our films are in quantitative agreement with results from samples prepared using more sophisticated methods.

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Growth and characterization of Bi2Se3 crystals by chemical vapor transport

Cited by 11 publications

References 33 publications

Enhancement of thermoelectric figure of merit in Bi₂Se₃crystals through a necking process

Enhancement of thermoelectric figure of merit in Bi₂Se₃crystals through a necking process

The dimensional crossover of quantum transport properties in few-layered Bi₂Se₃ thin films

Topological insulator thin films starting from the amorphous phase-Bi2Se3 as example

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Growth and characterization of Bi2Se3 crystals by chemical vapor transport

Cited by 11 publications

References 33 publications

Enhancement of thermoelectric figure of merit in Bi2Se3crystals through a necking process

Enhancement of thermoelectric figure of merit in Bi2Se3crystals through a necking process

The dimensional crossover of quantum transport properties in few-layered Bi2Se3 thin films

Topological insulator thin films starting from the amorphous phase-Bi2Se3 as example

Contact Info

Product

Resources

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Enhancement of thermoelectric figure of merit in Bi₂Se₃crystals through a necking process

Enhancement of thermoelectric figure of merit in Bi₂Se₃crystals through a necking process

The dimensional crossover of quantum transport properties in few-layered Bi₂Se₃ thin films