Growth and characterization of AlInGaN quaternary alloys

McIntosh, F. G.; Boutros, K. S.; Roberts, John C.; Bedair, S. M.; Piner, Edwin L.; El‐Masry, N. A.

doi:10.1063/1.116749

Cited by 100 publications

(43 citation statements)

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“…Excellent agreement is observed between theory and experimental data obtained from XRD measurements (squares and triangles in the figure) [29,30].…”

Section: B Al X Ga Y In 1−x−y N Quaternary Alloysupporting

confidence: 55%

Phase separation and ordering in group-III nitride alloys

et al. 2004

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The electronic, structural, and thermodynamic properties of cubic (zinc blende) group-III nitride ternary InxGa1−xN and quaternary AlxInyGa1−x−yN alloys are investigated by combining first-principles total energy calculations and cluster expansion methods. External biaxial strain on the alloys are taken into account in the calculations. While alloy fluctuations and strain effects play a minor role in the physical properties of AlGaN , due to the small lattice-mismatch, in the InGaN alloys we found a remarkable influence of strain on the phase separation. The effect of biaxial strain on the formation of ordered phases has been also investigated, and the results are used to clarify the origin of the light emission process in InxGa1−xN based optoelectronic devices. The dependence of the lattice constant and energy bandgap in quaternary AlxInyGa1−x−yN alloys was obtained as function of the compositions x and y.

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“…Excellent agreement is observed between theory and experimental data obtained from XRD measurements (squares and triangles in the figure) [29,30].…”

Section: B Al X Ga Y In 1−x−y N Quaternary Alloysupporting

confidence: 55%

Phase separation and ordering in group-III nitride alloys

et al. 2004

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“…In an attempt to solve these problems, several authors have grown quaternary films of AlInGaN by chemical vapor deposition ͑CVD͒ [5][6][7][8][9] and molecular beam epitaxy ͑MBE͒. 10 The desired band gap of the quaternary semiconductors can be adjusted, independently from the lattice constant, by controlling the atomic composition in the growth process.…”

Section: Introductionmentioning

confidence: 99%

Study of pinholes and nanotubes in AlInGaN films by cathodoluminescence and atomic force microscopy

Herrera

Cremades

Piqueras

et al. 2004

Journal of Applied Physics

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Cathodoluminescence ͑CL͒ in the scanning electron microscope and atomic force microscopy ͑AFM͒ have been used to study the formation of pinholes in tensile and compressively strained AlInGaN films grown on Al 2 O 3 substrates by plasma-induced molecular beam epitaxy. Nanotubes, pits, and V-shaped pinholes are observed in a tensile strained sample. CL images show an enhanced emission around the pits and a lower intensity at the V-shaped pinholes. Rounded pinholes appear in compressively strained samples in island-like regions with higher In concentration. The grain structure near the pinholes is resolved by AFM.

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“…The emission of blue and green lasers with highly strained InGaN quantum wells as active layers shifts toward higher energies and also the indium content in the alloy is limited to a few percent. 3 On the other hand, the large lattice mismatch in Al-rich AlGaN/GaN heterostructures decreases the critical thickness of fully strained AlGaN barriers in GaN-based transistors. This effect introduces relaxation via misfit dislocations and cracks and degrades the electronic transport properties.…”

mentioning

confidence: 99%

Inhomogeneous incorporation of In and Al in molecular beam epitaxial AlInGaN films

Cremades¹,

Navarro²,

Piqueras³

et al. 2001

Journal of Applied Physics

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Plasma-induced molecular beam epitaxial AlInGaN heterostructures have been characterized by spatial resolved cathodoluminescence and x-ray energy dispersive microanalysis. Competitive incorporation of Al and In has been observed, with the formation of In-rich regions, showing enhanced luminescence around surface pinholes. These island-like In-rich regions are favored by growth at lower temperature due to the higher incorporation of indium into the alloy. The elastic strain relaxation associated to pinhole formation induces preferential local indium incorporation. The diffusion of carriers to these areas with reduced band gap enhances the luminescence emission of the quaternary film. The width and intensity of the luminescence appear to be sensitive to the mismatch between the quaternary film and the GaN layer below.

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Growth and characterization of AlInGaN quaternary alloys

Cited by 100 publications

References 0 publications

Phase separation and ordering in group-III nitride alloys

Phase separation and ordering in group-III nitride alloys

Study of pinholes and nanotubes in AlInGaN films by cathodoluminescence and atomic force microscopy

Inhomogeneous incorporation of In and Al in molecular beam epitaxial AlInGaN films

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