2011
DOI: 10.1016/j.jallcom.2011.06.101
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Growth and characteristics of Zn–Se–S thin layers by dip method

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Cited by 10 publications
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“…In addition, unlike ZnO, ZnSe is also reported as a p- and n-type semiconductor, although it is still more difficult to realize an effective p-type than n-type ZnSe semiconductor . Till date, various ZnSe nanostructures have been investigated, and many different methods have also been reported to prepare ZnSe films, such as chemical bath deposition, magnetron sputtering, coprecipitation method, molecular beam epitaxy, thermal evaporation, electrodeposition, pulsed laser deposition technique, and electron-beam evaporation . Among these preparation methods, electron-beam evaporation has the advantages of economy of materials, convenient operation, and environmental friendliness.…”
Section: Introductionmentioning
confidence: 99%
“…In addition, unlike ZnO, ZnSe is also reported as a p- and n-type semiconductor, although it is still more difficult to realize an effective p-type than n-type ZnSe semiconductor . Till date, various ZnSe nanostructures have been investigated, and many different methods have also been reported to prepare ZnSe films, such as chemical bath deposition, magnetron sputtering, coprecipitation method, molecular beam epitaxy, thermal evaporation, electrodeposition, pulsed laser deposition technique, and electron-beam evaporation . Among these preparation methods, electron-beam evaporation has the advantages of economy of materials, convenient operation, and environmental friendliness.…”
Section: Introductionmentioning
confidence: 99%