Growth and characterisation of electrodeposited ZnO thin films

Wellings, Jayne Sara; Chaure, Nandu B.; Heavens, S. N.; Dharmadasa, I. M.

doi:10.1016/j.tsf.2007.07.156

Cited by 142 publications

(76 citation statements)

References 21 publications

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“…From the XRD patterns of ZnO thin films, it is clear that ZnO particles were well crystallized and have a dominant growth trend in the (002) direction. Additionally, other calculated parameters are in good agreement with the literature 21 as can be seen in Table I.…”

Section: Resultssupporting

confidence: 87%

Stimulated electroluminescence emission from n-ZnO/p-GaAs:Zn heterojunctions fabricated by electro-deposition

et al. 2013

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In this study, n-ZnO thin films were electrochemically deposited on p-GaAs:Zn substrates. The XRD results of ZnO thin films deposited on p-GaAs:Zn substrates at potentials varied from −0.9 V to −1.2 V show a strong c-axis (002) orientation and homogeneity. The current-voltage characteristics exhibit rectification, proving a low turn-on voltage and an ideality factor of 4.71. The n-ZnO/p-GaAs heterostructures show blue-white electroluminescence (EL) emission, which is composed of broad emission bands. In addition to these broad peaks, stimulated emission also appear on the top of the spectra due to the multiple reflections from the mirror like surfaces of ZnO-ZnO and ZnO-GaAs interfaces. Besides, three broad photoluminescence (PL) emission peaks have also been observed peaking at respectively around 3.36 eV, 3.28 eV and 3.07 eV generally attributed to the near bandedge emission, the residual donor level and deep level emission due to the localized defects, respectively. C 2013 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.

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Section: Resultssupporting

confidence: 87%

Stimulated electroluminescence emission from n-ZnO/p-GaAs:Zn heterojunctions fabricated by electro-deposition

et al. 2013

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“…3. It can be seen that the roughness of the four ZnO thin films is relatively lower compared to other electrodeposition processes [24]. For example, the sample deposited on a gold substrate shows a roughness 28 nm (Fig.…”

Section: Esem/afm Resultsmentioning

confidence: 89%

Structural and optical properties of electrodeposited ZnO thin films

Laurent¹,

Wang

et al. 2008

Thin Solid Films

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“…It appears that FWHM exhibits a maximum at pAl = 7. According to the Hull relationship [41], strain and mean grain size influence oppositely FWHM. Then taking into account that, as shown in the following section, the grain size increases with increasing Al content up to pAl = 7, we can make the hypothesis that the decrease of the (002) diffraction peak is mainly due to the increase of the strain in the film.…”

Section: Structural and Morphological Characterizationsmentioning

confidence: 99%