Grown-in defects in silicon produced by agglomeration of vacancies and self-interstitials

Voronkov, V. V.

doi:10.1016/j.jcrysgro.2007.11.100

Cited by 45 publications

(29 citation statements)

References 24 publications

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“…It is rich in oxide particles and known as an OiSF-ring after oxidation. 20 These oxide particles are assumed to be active recombination centers. The P-band emerges when the V/G ratio is slightly higher than the (V/G) critical values where V is the growth rate and G is the thermal gradient.…”

Section: Correlation Of Lifetime To Td Concentration In As-grown Smentioning

confidence: 99%

Investigating thermal donors in n-type Cz silicon with carrier density imaging

Schøn

Øvrelid

et al. 2012

AIP Advances

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A new method to map the thermal donor concentration in silicon wafers using carrier density imaging is presented. A map of the thermal donor concentration is extracted with high resolution from free carrier density images of a silicon wafer before and after growth of thermal donors. For comparison, free carrier density mapping is also performed using the resistivity method together with linear interpolation. Both methods reveal the same distribution of thermal donors indicating that the carrier density imaging technique can be used to map thermal donor concentration. The interstitial oxygen concentration can also be extracted using the new method in combination with Wijaranakula's model. As part of this work, the lifetime at medium injection level is correlated to the concentration of thermal donors in the as-grown silicon wafer. The recombination rate is found to depend strongly on the thermal donor concentration except in the P-band region

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Section: Correlation Of Lifetime To Td Concentration In As-grown Smentioning

confidence: 99%

Investigating thermal donors in n-type Cz silicon with carrier density imaging

Schøn

Øvrelid

et al. 2012

AIP Advances

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“…We are conducted similar consideration for our conditions (Talanin et al, 2007b;2008). Under physical-model conditions (heterogeneous mechanism of grown-in microdefect formation), we assume that the component A is the background impurity (oxygen O or carbon C) and the component B is intrinsic point defects (vacancies V or interstitials I).…”

Section: Model Of Formation Complex "Impurity + Intrinsic Point Defect"mentioning

confidence: 99%

“…For the formation of precipitates in the high-temperature range T ~ 1683…1403 K has been calculated using www.intechopen.com the model of dissociative diffusion (Talanin et al, 2007b;2008). This approximation is valid at the initial stages of the formation of nuclei, when their sizes are small and the use of Fokker-Planck continuity differential equations is impossible.…”

Section: Model For the Formation Of Precipitatesmentioning

confidence: 99%

“…In this model was first used mathematical tool which allows you to associate the defect structure of crystal with distribution in the crystal thermal fields during the growth (Prostomolotov et al, 2011). It has been suggested that the fast recombination of intrinsic point defects near the crystallization front as a function of the growth parameter V g /G (where V g is the rate of crystal growth; G is the axial temperature gradient) leads to the formation of microvoids or interstitial dislocation loops (Voronkov, 2008). It is assumed that in the case V g /G < ξ crit formed only interstitial A-microdefects as a result of aggregation of intrinsic interstitial silicon atoms.…”

Section: Introductionmentioning

confidence: 99%

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The Diffusion Model of Grown-In Microdefects Formation During Crystallization of Dislocation-Free Silicon Single Crystals

Talanin¹,

Talanin²

2012

Advances in Crystallization Processes

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Advances in Crystallization Processes 612 microvoids as a result of aggregation of vacancies (Goethem et al., 2008;Kulkarni, 2008a). In this physical model, the interaction between the impurities and intrinsic point defects is not considered (Kulkarni et. al., 2004). R e c e n t v e r s i o n s o f t h i s m o d e l h a v e s u g g e s t e d t h a t p a r t o f t h e v a c a n c i e s ( v ) i n t h e temperature range 1683 ... 1373 K, due to the interaction with oxygen (O) and nitrogen (N) impurities, are bound into complexes of the vO, vO 2 , and vN types (Kulkarni 2007;2008b). After the formation of microvoids, the aforementioned complexes grow and take up vacancies. This model has ignored the growth of the complexes by means of the injection of intrinsic interstitial silicon atoms and the interaction of an impurity with intrinsic interstitial silicon atoms (Kulkarni 2007;2008b).In the general case recombination-diffusion model assumes that the process of defect formation in dislocation-free silicon single crystals occurs in four stages: (i) fast recombination of intrinsic point defects near the crystallization front; (ii) the formation in the narrow temperature range 1423...1223 K depending on the value of V g /G microvoids or interstitial dislocation loops; (iii) the formation of oxygen clusters in the temperature range 1223...1023 K; (iv) growth of precipitates as a result of subsequent heat treatments.Recombination-diffusion model is the physical basis for models of the dynamics of point defects. The mathematical model of point defect dynamics in silicon quantitatively explains the homogeneous mechanism of formation of microvoids and dislocation loops. It should be noted that, in the general case, the model of point defect dynamics includes three approximations: rigorous, simplified, and discrete-continuum approaches (Sinno, 1999;Dornberger et. al., 2001;Wang & Brown, 2001;Kulkarni et. al., 2004;Kulkarni, 2005;Prostomolotov & Verezub, 2009). The rigorous model requires the solution to integrodifferential equations for point defect concentration fields, and the distribution of grown-in microdefects in this model is a function of the coordinates, the time, and the time of evolution of the size distribution of microdefects. A high consumption of time and cost for the performance of calculations required the development of a simplified model in which the average defect radius is approximated by the square root of the average defect area. This approximation is taken into account in the additional variable, which is proportional to the total area of the defect surface. The simplified model is effective for calculating the twodimensional distribution of grown-in microdefects. Both models use the classical nucleation theory and suggest the calculation of the formation of stable nuclei and the kinetics of diffusion-limited growth of defects. The discrete-continuum approximation suggests a complex approach: the solution to discrete equations for the smallest defects and the solution to the Fokker-Planck equation for...

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“…[7,8] A number of works on the structure and formation mechanism of the GMDs have been published in the last decades, [9][10][11][12][13] and all investigations show their dependence on the interstitial oxygen, which is one of the main impurities in Cz-silicon. Meanwhile, the development of new metallurgical refining and recycling technologies provides alternative feedstock for the PV industry.…”

Section: Introductionmentioning

confidence: 99%

Cz-Silicon Produced from Solar Grade and Recycled Materials. Part I: Bulk Properties and Formation of As-Grown Defects

Zhang

Øvrelid

Juel

et al. 2014

Metallurgical and Materials Transactions E

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The current paper is the first of two, investigating the properties of Czochralski-silicon (Cz-silicon) materials and solar cells produced with recycled and compensated silicon materials. In this work, impurity levels in two experimental Cz-silicon ingots were characterized by glow discharge mass spectroscopy and FTIR. The combined effects of these impurities on recombination properties were investigated by photoluminescence imaging and compared to bulk properties of a reference ingot. Ring pattern distribution of as-grown micro-defects in the ingots, related to elevated carbon and oxygen levels, were delineated based on the results of two steps of dry oxidation. Moreover, the mechanism of defect formation in the experimental Cz-Si during solidification and oxidation is elaborated in light of thermodynamic theories. Meanwhile, the positive effect of phosphorus in compensated feedstock is discussed in relation to the minority carrier lifetime based on the quasi-steady-state photoconductance results, as well as on the restricted formation of oxygen-related defects during solidification by analyzing samples after oxidation and copper decoration.

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Grown-in defects in silicon produced by agglomeration of vacancies and self-interstitials

Cited by 45 publications

References 24 publications

Investigating thermal donors in n-type Cz silicon with carrier density imaging

Investigating thermal donors in n-type Cz silicon with carrier density imaging

The Diffusion Model of Grown-In Microdefects Formation During Crystallization of Dislocation-Free Silicon Single Crystals

Cz-Silicon Produced from Solar Grade and Recycled Materials. Part I: Bulk Properties and Formation of As-Grown Defects

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