Group III- and Group IV-Nitride Nanorods and Nanowires

Chen, L. C.; Chen, K. H.; Chen, C.-C.

doi:10.1007/978-0-387-28745-4_9

Cited by 18 publications

(5 citation statements)

References 167 publications

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“…The distance between barriers was taken from InN's lattice constant equal to 0.3533 nm and the width of barrier potential was taken from GaN's lattice constant equal to 0.3189 nm [10]. Effective electron mass inside and outside the barrier were 0.22 𝑚 0 and 0.12 𝑚 0 respectively [11]. The electron energy was smaller than barrier potential (𝐸 < 𝑉) with variation values from 0.003 eV to 2.0 eV.…”

Section: Methodsmentioning

confidence: 99%

Calculating InN/GaN Transmission Coefficient from Single Barrier to Five Barriers with Propagation Matrix and Transfer Matrix Methods

Ulya,

Ong,

Sihombing

2023

Fiziya

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In this study, the value of transmission coefficient on InN/GaN semiconductor from a single barrier to five barriers was determined by using the propagation matrix method and the transfer matrix method. This study aims to see the effect of adding a barrier to the number of resonance tunneling that occurs, to see the difference in transmission coefficient values which was obtained with the two methods, and to determine the effectiveness of the program execution process time from the propagation matrix and transfer matrix methods using Matlab programming. The results obtained indicated that the value of the transmission coefficient obtained from the two methods was the same. As the number of barriers increases, the number of resonance tunneling that occurs will increase. These two matrix methods had differences in terms of the effectiveness of the program execution process time and calculation process. The propagation matrix method was considered more effective than the transfer matrix method.

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Section: Methodsmentioning

confidence: 99%

Calculating InN/GaN Transmission Coefficient from Single Barrier to Five Barriers with Propagation Matrix and Transfer Matrix Methods

Ulya,

Ong,

Sihombing

2023

Fiziya

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“…If the size is close to the Bohr radius of the exciton (for GaN is within 2.8-11 nm), quantum confinement occurs resulting in a blue-shift of the excitonic transition energies. [30,31] At this scale, quantum confinement effects can be exploited in terms of tailoring geometry. For example, there is a dependence between size of the nanostructures and bandgap.…”

Section: One-dimensional Nanostructuresmentioning

confidence: 99%

Self-Assembled and Selective-Area Growth of Group III-Nitride Semiconductor Nanorods by Magnetron Sputter Epitaxy

Serban¹

2018

Linköping Studies in Science and Technology. Dissertations

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“…In this work, in situ growth behavior and controllability of the alignment of GaN nanowires using an external magnetic field through the VLS mechanism in a CVD setup have been investigated. In a past few decades, GaN, a wide and direct band gap semiconductor, has been widely studied for applications in full color displays, blue LED, high electron mobility devices, and so forth. , Although many reports on CVD-grown GaN nanowires are available, the present work contrasts with them in that (1) an attempt has been made to grow nanowires using a ferromagnetic catalyst under the influence of a variable magnetic field strength and (2) near-ambient working pressure has been employed in the CVD chamber that may simplify the experimental procedure with viable cost advantages.…”

Section: Introductionmentioning

confidence: 99%

In Situ Magnetic Field-Assisted Low Temperature Atmospheric Growth of GaN Nanowires via the Vapor–Liquid–Solid Mechanism

Kim

Mohanty

Han

et al. 2013

ACS Appl. Mater. Interfaces

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We report the growth of GaN nanowires at a low temperature of 750 °C and at atmospheric pressure in a conventional chemical vapor deposition (CVD) setup via the vapor-liquid-solid mechanism with remarkable control of directionality and growth behavior by using an in situ magnetic field. Under typical growth conditions, without any magnetic field, the nanowires are severely twisted and kinked, and exhibit a high density of planar stacking defects. With increasing in situ magnetic field strength, the microstructural defects are found to decrease progressively, and quasi-aligned nanowires are produced. At an applied magnetic field strength of 0.80 T, near-vertical aligned straight and several micrometers long nanowires of average diameter of ~40 nm with defect-free microstructure are routinely produced. Photoluminescence measurements show that the relative intensity of the defect-related peaks in the visible region with respect to the near-band-edge emission continuously decrease with increase in the applied in situ magnetic field strength, ascribable to the magnetic field-assisted significant structural improvement of the wires. It is found out that the degree of agglomerative Ni droplet on Si is critically influenced by the surface tension driven by the magnetic force, which in turn determines the eventual properties of the nanowires.

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Group III- and Group IV-Nitride Nanorods and Nanowires

Cited by 18 publications

References 167 publications

Calculating InN/GaN Transmission Coefficient from Single Barrier to Five Barriers with Propagation Matrix and Transfer Matrix Methods

Calculating InN/GaN Transmission Coefficient from Single Barrier to Five Barriers with Propagation Matrix and Transfer Matrix Methods

Self-Assembled and Selective-Area Growth of Group III-Nitride Semiconductor Nanorods by Magnetron Sputter Epitaxy

In Situ Magnetic Field-Assisted Low Temperature Atmospheric Growth of GaN Nanowires via the Vapor–Liquid–Solid Mechanism

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