1998
DOI: 10.1117/12.317257
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Grisms from germanium/silicon for astronomical instruments

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Cited by 11 publications
(7 citation statements)
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“…Some of this work occurred using silicon wafers with a view towards mounting them on prism shaped Si or Ge substrates [22][23][24], and some have fabricated gratings on thick monolithic substrates [25][26][27][28][29][30], with the obvious advantage of avoiding potential optical and mechanical problems when bonding. Most work has focused on methods for producing gratings blazed at δ 100 = cos -1 (3 -1/2 ) = 54.7º, the natural angle that occurs for {100} Si surfaces.…”
Section: Grating Fabricationmentioning
confidence: 99%
“…Some of this work occurred using silicon wafers with a view towards mounting them on prism shaped Si or Ge substrates [22][23][24], and some have fabricated gratings on thick monolithic substrates [25][26][27][28][29][30], with the obvious advantage of avoiding potential optical and mechanical problems when bonding. Most work has focused on methods for producing gratings blazed at δ 100 = cos -1 (3 -1/2 ) = 54.7º, the natural angle that occurs for {100} Si surfaces.…”
Section: Grating Fabricationmentioning
confidence: 99%
“…Silicon transmission gratings were first used at mid-IR wavelengths where the spacing tolerances are more relaxed. 10 The UT group has been working on Si grisms as part of its research into Si diffractive optics. Its first flight hardware consists of a set of four grisms to provide a low dispersion mode with a long slit and a medium resolution cross-dispersed mode in the 5-8 µm and 18-37 µm bands in the FORCAST mid-IR camera on the SOFIA Airborne Observatory.…”
Section: Silicon Grisms To Datementioning
confidence: 99%
“…This equation implies that modest misorientations of the grism [represented by a small change in α in Eq. 5] lead to only very small changes in the direction of the diffracted beam since the value of β changes by an almost equal amount [7]. For example, for a Si grism with n ¼ 3:4, δ ¼ 6:16°, and σ ¼ 87 μm operating at m ¼ 1 (λ blaze ¼ 22:4 μm), a device tilt of 1°in the dispersion axis leads to a deflection of the central blaze wavelength of slightly less than 0:001°f rom that of a device with no tilt.…”
Section: Introductionmentioning
confidence: 99%