Green Up-Conversion Luminescence in Yb/Er Co-Doped AlN Thin Film by RF Magnetron Sputtering

Abstract

In this research study, aluminum Nitride (AlN) thin film co-doped with erbium and ytterbium has been deposited on Si (100) substrate by RF magnetron Sputtering. After deposition, the film was annealed at 1100 °C in ambient conditions. It’s structural properties were investigated X-ray diffraction (XRD). Thin films morphology is studied using SEM, and EDX provides the chemical composition information. The photoluminescence property of deposited film was investigated by FS5 spectrofluorometer. XRD result revealed that the film has grown along the c-axis oriented in hexagonal wurtzite structure. SEM Result shows that the average size of the particle is 100 nm. The up-conversion luminescence showed intense green and red emission peaks at 530 nm, 552 nm, and 665 nm due to the transition of Er (2H11/2 → 4I15/2, 4S3/2 → 4I15/2, and 4F9/2 → 4I15/2) with excitation of 984 nm. The excitation wavelength with 483 nm photons produces visible luminescence in the green and red region with 557 and 660 nm due to Erbium.

A Study of the Structural and Surface Morphology and Photoluminescence of Ni-Doped AlN Thin Films Grown by Co-Sputtering

“…Recently, many scientific and technological efforts have been made, focusing on improving the physical properties of AIN, such as adding catalysts [ 1 ], doping metal and metal oxides [ 2 , 3 , 4 ], preparing composite materials [ 5 ], etc. Among these methods, doping metal materials into AIN has been proven to be a simple and efficient approach to enhance its physical and chemical properties.…”