Green/Red Electroluminescence from Metal–Oxide–Semiconductor Devices Fabricated by Spin-Coating of Rare-Earth Organic Compounds on Silicon

Ohzone, T.; Matsuda, T.; Hase, Souta; Nohara, Shingo; Iwata, Hideyuki

doi:10.7567/jjap.50.064102

Cited by 3 publications

(20 citation statements)

References 20 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Twelve kinds of MOS devices were fabricated as listed in Table I. Since #1[+Ba] fabricated with the Tb=Ba mixture solution showed a much stronger green EL than #0[Tb] with the Tb liquid only, 32) the mixture solution with the atomic ratio of (Tb : Ba ¼ 10 : 1) was used as the base spin-coating liquid source for the devices with Eu. #2[+Eu1]-#10[+Eu400] devices were spin-coated with the Tb=Eu liquid sources of (Tb : Eu ¼ 1000 : 1=2=5=10=20=50=100= 200=400) prepared by adding Eu liquids to the (Tb : Ba ¼ 10 : 1) solutions.…”

Section: Methodsmentioning

confidence: 99%

“…The fabrication procedures were the same as those in our previous experiments. 32) After the annealing treatments, the surface of #0[Tb]-#10[+Eu400] was light yellowish brown. As the Eu ratio increased, the brown color became lighter, and finally the surface of #11 [Eu] without Tb became light yellowish white.…”

Section: Methodsmentioning

confidence: 99%

“…Recently, we have fabricated MOS devices with Tb=Eusilicate-related oxides (Tb=Eu-Si-O) by the furnace annealing of a [Tb, (Tb + Ba)] and (Tb + Eu) organic compound film spin-coated on an n + -Si substrate, and they showed green and red ELs, 31,32) respectively. The simple fabrication process of spin-coating or ink-jet-printing organic compound mixtures on a silicon substrate, followed by thermal annealing, provides the possibility of realizing low-cost full-color displays.…”

Section: Introductionmentioning

confidence: 99%

“…The device structure is indium-tin oxide (ITO)=[(Ta + Ba) + Eu]-Si-O insulator layer=n + -Si substrate, similar to that in previous studies. [31][32][33][34] Current versus voltage (I G -V G ) characteristics, EL colors, and EL spectra are presented. The surface insulator layers are analyzed by cross-sectional transmission electron microscopy (TEM), X-ray diffraction (XRD) analysis, and X-ray photoelectron spectroscopy (XPS).…”

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Electroluminescence color tuning between green and red from metal–oxide–semiconductor devices fabricated by spin-coating of rare-earth (terbium + europium) organic compounds on silicon

Matsuda

Hattori

Iwata

et al. 2018

Jpn. J. Appl. Phys.

Self Cite

View full text Add to dashboard Cite

Color tunable electroluminescence (EL) from metal-oxide-semiconductor devices with the rare-earth elements Tb and Eu is reported. Organic compound liquid sources of (Tb + Ba) and Eu with various Eu/Tb ratios from 0.001 to 0.4 were spin-coated on an n + -Si substrate and annealed to form an oxide insulator layer. The EL spectra had only peaks corresponding to the intrashell Tb 3+ /Eu 3+ transitions in the spectral range from green to red, and the intensity ratio of the peaks was appropriately tuned using the appropriate Eu/Tb ratios in liquid sources. Consequently, the EL emission colors linearly changed from yellowish green to yellowish orange and eventually to reddish orange on the CIE chromaticity diagram. The gate current +I G current also affected the EL colors for the medium-Eu/Tb-ratio device. The structure of the surface insulator films analyzed by cross-sectional transmission electron microscopy (TEM), X-ray diffraction (XRD) analysis, and X-ray photoelectron spectroscopy (XPS) has four layers, namely, (Tb 4 O 7 + Eu 2 O 3 ), [Tb 4 O 7 + Eu 2 O 3 + (Tb/Eu/Ba)SiO x ], (Tb/Eu/Ba)SiO x , and SiO x -rich oxide. The EL mechanism proposed is that electrons injected from the Si substrate into the SiO x -rich oxide and Tb/Eu/Ba-silicate layers become hot electrons accelerated in a high electric field, and then these hot electrons excite Tb 3+ and Eu 3+ ions in the Tb 4 O 7 /Eu 2 O 3 layers resulting in EL emission from Tb 3+ and Eu 3+ intrashell transitions.

show abstract

Section: Methodsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Electroluminescence color tuning between green and red from metal–oxide–semiconductor devices fabricated by spin-coating of rare-earth (terbium + europium) organic compounds on silicon

Matsuda

Hattori

Iwata

et al. 2018

Jpn. J. Appl. Phys.

Self Cite

View full text Add to dashboard Cite

show abstract

“…10 In order to circumvent these problems, the focus has shifted to alternative host materials and/or alternative fabrication methods. Recently, strong EL was achieved for Tb-doped Si-rich SiN, 11 Si-rich SiO 2 , 12 TiO 2 , 13 barium silicate, 14 ZnO, 15 or from porous Al 2 O 3 . 16 In this paper, we study the EL properties of SiO 2 -Tb 2 O 3 -mixed layers fabricated by atomic layer deposition (ALD) which provides a precise control of rare earth doping and co-doping with Al 2 O 3 on a sub-atomic layer scale.…”

mentioning

confidence: 99%

Strong electroluminescence from SiO2-Tb2O3-Al2O3 mixed layers fabricated by atomic layer deposition

Rebohle

Braun

Wutzler

et al. 2014

Applied Physics Letters

View full text Add to dashboard Cite

Articles you may be interested inLow-temperature plasma-enhanced atomic layer deposition of HfO2/Al2O3 nanolaminate structure on Si J. Vac. Sci. Technol. B 33, 01A101 (2015); 10.1116/1.4895010 Mechanical and electrical properties of plasma and thermal atomic layer deposited Al2O3 films on GaAs and Si J. Vac. Sci. Technol. A 31, 041502 (2013); 10.1116/1.4804175 Examining the role of hydrogen in the electrical performance of in situ fabricated metal-insulator-metal trilayers using an atomic layer deposited Al2O3 dielectric Atomic layer deposition of Al2O3 and AlxTi1−xOy thin films on N2O plasma pretreated carbon materials J. Vac. Sci. Technol. A 31, 01A135 (2013); 10.1116/1.4769793 Electroluminescence properties of the Gd 3 + ultraviolet luminescent centers in Si O 2 gate oxide layers

show abstract

Blue/pink/purple electroluminescence from metal–oxide–semiconductor devices fabricated by spin-coating of [tantalum:(gadolinium/praseodymium)] and (praseodymium:cerium) organic compounds on silicon

Ohzone

Matsuda

Fukuoka

et al. 2016

Jpn. J. Appl. Phys.

Self Cite

View full text Add to dashboard Cite

Blue/pink/purple electroluminescence (EL) from metal–oxide–semiconductor (MOS) devices with an indium tin oxide (ITO)/[Gd/(Ta + Gd/Pr)/(Pr + Ce)–Si–O] insulator layer/n+-Si substrate surface is reported. The insulator layers were fabricated from organic liquid sources of Gd or (Ta + Gd/Pr)/(Pr + Ce) mixtures, which were spin-coated on the n+-Si substrate and annealed at 950 °C for 30 min in air. The EL emission could be observed by the naked eye in the dark in the Fowler–Nordheim (FN) tunnel current regions. Peak wavelengths in the measured EL spectra were independent of the positive current. The EL intensity ratio of ultraviolet (UV) to the visible range varied with the composition ratio of the (Ta + Gd) liquids, and an optimum Ta to Gd ratio existed for the strongest blue emission, which could be attributed to the Ta-related oxide/silicate. The pink EL of the device fabricated with the ( ) mixture ratio can be explained by EL emission peaks related to the Pr3+ ions. The purple EL observed from the ( ) device corresponds to the strong and broad emission profile near the 357 nm peak, which cannot be assigned to Ce3+ ions. The results suggest that the EL can be attributed to the double-layer oxides with different compositions in the MOS devices. The upper layer consists of various Ta-, Gd-, Pr-, and Ce-related oxides and their silicates, while the lower SiO x -rich layer contributes to the FN current due to the high electric field, and thus the various EL colors.

show abstract

Green/Red Electroluminescence from Metal–Oxide–Semiconductor Devices Fabricated by Spin-Coating of Rare-Earth Organic Compounds on Silicon

Cited by 3 publications

References 20 publications

Electroluminescence color tuning between green and red from metal–oxide–semiconductor devices fabricated by spin-coating of rare-earth (terbium + europium) organic compounds on silicon

Electroluminescence color tuning between green and red from metal–oxide–semiconductor devices fabricated by spin-coating of rare-earth (terbium + europium) organic compounds on silicon

Strong electroluminescence from SiO2-Tb2O3-Al2O3 mixed layers fabricated by atomic layer deposition

Blue/pink/purple electroluminescence from metal–oxide–semiconductor devices fabricated by spin-coating of [tantalum:(gadolinium/praseodymium)] and (praseodymium:cerium) organic compounds on silicon

Contact Info

Product

Resources

About