Strong electroluminescence from SiO2-Tb2O3-Al2O3 mixed layers fabricated by atomic layer deposition

Rebohle, L.; Braun, Manuel; Wutzler, R.; Liu, B.; Sun, Jiaming; Helm, M.; Skorupa, W.

doi:10.1063/1.4885418

Cited by 25 publications

(12 citation statements)

References 21 publications

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“…One of the limitations is the large leakage current. RE-implanted SiO 2 MOS-structured light-emitting devices (MOSLEDs) have attracted much attention due to their notable EL efficiency and silicon compatibility [16,17]. In comparison, similar devices based on Al 2 O 3 nanofilms present much lower working voltage, and comparable efficiency in our previous study, while their EL performance needs more exploration [18,19].…”

Section: Introductionmentioning

confidence: 91%

Blue Electroluminescent Al2O3/Tm2O3 Nanolaminate Films Fabricated by Atomic Layer Deposition on Silicon

Liu

Ouyang

et al. 2019

Nanomaterials

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Realization of a silicon-based light source is of significant importance for the future development of optoelectronics and telecommunications. Here, nanolaminate Al2O3/Tm2O3 films are fabricated on silicon utilizing atomic layer deposition, and intense blue electroluminescence (EL) from Tm3+ ions is achieved in the metal-oxide-semiconductor structured luminescent devices based on them. Precise control of the nanolaminates enables the study on the influence of the Tm dopant layers and the distance between every Tm2O3 layer on the EL performance. The 456 nm blue EL from Tm3+ ions shows a maximum power density of 0.15 mW/cm2. The EL intensities and decay lifetime decrease with excessive Tm dopant cycles due to the reduction of optically active Tm3+ ions. Cross-relaxation among adjacent Tm2O3 dopant layers reduces the blue EL intensity and the decay lifetime, which strongly depends on the Al2O3 sublayer thickness, with a critical value of ~3 nm. The EL is attributed to the impact excitation of the Tm3+ ions by hot electrons in Al2O3 matrix via Poole–Frenkel mechanism.

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Section: Introductionmentioning

confidence: 91%

Blue Electroluminescent Al2O3/Tm2O3 Nanolaminate Films Fabricated by Atomic Layer Deposition on Silicon

Liu

Ouyang

et al. 2019

Nanomaterials

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“…[28][29][30][31] Despite this interesting scenario, RE-doped oxides also present important drawbacks that need to be overcome, such as the high voltage operation for the EL threshold, the formation of nonemitting RE clusters inside the SiO2 or the progressive film degradation as a consequence of the continuous hot carrier injection under electrical pumping. [23][24][25] Such detrimental performance is mostly caused by the large bandgap of SiO2, which is around ~ 9 eV. Therefore, silicon nitride (Si3N4) has often been postulated as a promising host material to replace SiO2, as it has much lower bandgap (~ 4 eV), is silicon compatible and provides a suitable environment for RE ions.…”

Section: Introductionmentioning

confidence: 99%

Luminescence properties of Ce3+ and Tb3+ co-doped SiOxNy thin films: Prospects for color tunability in silicon-based hosts

Ramírez

Ruiz‐Caridad

Wójcik

et al. 2016

Journal of Applied Physics

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In this work, the role of the nitrogen content, the annealing temperature and the sample morphology on the luminescence properties of Ce 3+ and Tb 3+ co-doped SiOxNy thin films has been investigated. An increasing nitrogen atomic percentage has been incorporated in the host matrix by gradually replacing oxygen by nitrogen during fabrication while maintaining the Si content unaltered, obtaining a sequential variation in the film composition from nearly stoichiometric SiO2 to SiOxNy. The study of rare earth doped single layers has allowed us to identify the parameters that yield an optimum optical performance from Ce 3+ and Tb 3+ ions. Ce 3+ ions proved to be highly sensitive to the annealing temperature and the nitrogen content, showing strong PL emission for relatively low nitrogen contents (from 0 to 20 %) and moderate annealing temperatures (800-1000 °C) or under high temperature annealing (1180 °C). Tb 3+ ions, on the other hand, displayed a mild dependence on those film parameters. Rare earth co-doping has also been investigated by comparing the luminescence properties of three different approaches: (i) a Ce 3+-and Tb 3+ co-doped SiOxNy single layer, (ii) a bilayer composed of two SiOxNy single layers doped with either Ce 3+ or Tb 3+ ions, and (iii) a multilayer composed of a series of either Tb 3+ or Ce 3+-doped SiOxNy thin films with interleaved SiO2 spacers. Bright green emission and efficient energy transfer from either Ce 3+ ions or Ce silicates to Tb 3+ ions has been observed in the co-doped single layer as a consequence of the strong ion-ion interaction. On the other hand, independent luminescence from Ce 3+ and Tb 3+ ions has been observed in the Ce 3+ and Tb 3+ co-doped bilayer and multilayer, providing a good scenario to develop light emitting devices with wide color tunability by varying the number of deposited films that contain each rare earth dopant. Moreover, the optoelectronic properties of Ce 3+-and/or Tb 3+-doped thin films have been studied by depositing transparent conductive electrodes over selected samples. An electroluminescence signal according to the rare earth transitions is obtained in all cases, validating the excitation of Ce 3+ and Tb 3+ ions upon electron injection. Also, the main charge transport of injected electrons has been evaluated and correlated with the layer stoichiometry. Finally, a simple 2 reliability test has allowed disclosing the origin of the early breakdown of test devices, attributed to the excessive joule heating at filament currents that occur around a region close to the polarization point.

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“…Alternatively, rare-earth doped SiO 2 has attracted a lot of interest due to their high luminescence efficiency and wide spectral range spanning from ultraviolet (UV) to infrared (IR). More importantly, SiO 2 is naturally compatible with Si technology78. Previously, efficient visible light-emitting devices based on rare-earth doped metal-oxide-semiconductor (MOS) structures have been demonstrated91011.…”

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confidence: 99%

A novel violet/blue light-emitting device based on Ce2Si2O7

Wang

et al. 2015

Sci Rep

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Rare-earth silicates are highly efficient materials for silicon-based light sources. Here we report a novel light-emitting device based on Ce2Si2O7. Intense violet/blue electroluminescence was observed, with a turn-on voltage of about 13 V. The violet/blue emission is attributed to 4f–5d transitions of the Ce3+ ions in Ce2Si2O7, which are formed by interfacial reaction of CeO2 and Si. Electroluminescence and photoluminescence mechanisms of the Ce2Si2O7 light-emitting device are also discussed.

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Strong electroluminescence from SiO2-Tb2O3-Al2O3 mixed layers fabricated by atomic layer deposition

Cited by 25 publications

References 21 publications

Blue Electroluminescent Al2O3/Tm2O3 Nanolaminate Films Fabricated by Atomic Layer Deposition on Silicon

Blue Electroluminescent Al2O3/Tm2O3 Nanolaminate Films Fabricated by Atomic Layer Deposition on Silicon

Luminescence properties of Ce3+ and Tb3+ co-doped SiOxNy thin films: Prospects for color tunability in silicon-based hosts

A novel violet/blue light-emitting device based on Ce2Si2O7

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