Green laser diodes with channelled-substrate planar waveguide structure

Kawasumi, T.; Nakayama, N.; Ishibashi, Akira; Mori, Yojiro

doi:10.1049/el:19951111

Cited by 16 publications

(7 citation statements)

References 4 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…4(a), the following three procedures can be conceived: (i) suppression of defect reaction, (ii) accomplishing oscillation at as low a current density as possible, and (iii) reduction of the number of defects introduced in the crystal growth process. 9, a threshold current density of 210 A/cm 2 is obtained in a laser structure with both the carriers and light laterally confined [19]. It is believed that Be compounds have higher bond energies than other IIVI family compounds.…”

Section: Improvement Of Lifetimementioning

confidence: 98%

See 1 more Smart Citation

Device characteristics and degradation of ZnMgSSe-based semiconductor lasers

Nakano

Ishibashi

1998

Electron. Comm. Jpn. Pt. II

View full text Add to dashboard Cite

Static characteristics such as the threshold current density and optical output of the II‐VI family laser diodes, promising as a light source for high‐density optical disk systems, have reached levels comparable to those of the III‐V family laser diodes. Improvement of device lifetime is the important subject for practical devices. By means of an analysis of degradation and optimization of the growth method, the rapid degradation mode caused by stacking faults seen in the early devices can now be avoided. At present, due to the rather slow degradation mode related to point defects, the life is extended to 100‐h operation at room temperature. A defect model based on the recombination‐enhanced defect reaction is proposed. It is shown that the two degration modes presently observed can be described well by this model. Further, it is made clear that no catastrophic degradation mode occurs under high injection conditions of up to 1.3 kA/cm2 in the II‐VI devices and that there is no fatal instability inherent in the material in practice. © 1998 Scripta Technica, Electron Comm Jpn Pt 2, 81(6): 27–34, 1998

show abstract

Section: Improvement Of Lifetimementioning

confidence: 98%

“…For instance, by performing crystal growth using a channeled substrate as shown in Fig. 9, a threshold current density of 210 A/cm 2 is obtained in a laser structure with both the carriers and light laterally confined [19]. For (iii), optimization of the growth conditions is the standard but steady approach.…”

Section: Improvement Of Lifetimementioning

confidence: 99%

Device characteristics and degradation of ZnMgSSe-based semiconductor lasers

Nakano

Ishibashi

1998

Electron. Comm. Jpn. Pt. II

View full text Add to dashboard Cite

show abstract

“…In the near future diode lasers in the green or even blue spectral range might be available [5,6] and with such diode lasers even better profilometer lateral resolutions could be achieved.…”

Section: Selection Of Appropriate Diode Lasersmentioning

confidence: 99%

Ion Transport Analysis by Extended Wannier Theory: II. Effect of Ion Density Gradient in the Transverse Direction

Kondo

Yamada

2000

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

An interference profilometer has been developed which uses a diode laser as a non-expensive, compact and wavelength tunable light source. The profilometer works like an optical stylus and can be realized at relatively low expense. Two different methods of interference signal processing have been worked out. Both methods take advantage of the wavelength tunability of the diode laser. In connection with the development of the profilometer the spectral properties of different types of diode laser in the wavelength range from 780 nm down to 633 nm have been measured. The performance of the profilometer was proved by comparison measurements with a HeNe laser interferometer and by the measurement of well known surfaces. A measurement range of up to 100 µm and a measurement uncertainty of better than 10 nm can be achieved.

show abstract

“…It should be mentioned here that much research effort is currently being made in the field of diode lasers. In the near future diode lasers in the green or even blue spectral range might be available [5,6] and with such diode lasers even better profilometer lateral resolutions could be achieved.…”

Section: Selection Of Appropriate Diode Lasersmentioning

confidence: 99%

Interferometer with a wavelength-tuned diode laser for surface profilometry

Abou‐Zeid

Wiese

1998

Meas. Sci. Technol.

View full text Add to dashboard Cite

An interference profilometer has been developed which uses a diode laser as a non-expensive, compact and wavelength tunable light source. The profilometer works like an optical stylus and can be realized at relatively low expense. Two different methods of interference signal processing have been worked out. Both methods take advantage of the wavelength tunability of the diode laser. In connection with the development of the profilometer the spectral properties of different types of diode laser in the wavelength range from 780 nm down to 633 nm have been measured. The performance of the profilometer was proved by comparison measurements with a HeNe laser interferometer and by the measurement of well known surfaces. A measurement range of up to 100 m and a measurement uncertainty of better than 10 nm can be achieved.

show abstract

Green laser diodes with channelled-substrate planar waveguide structure

Cited by 16 publications

References 4 publications

Device characteristics and degradation of ZnMgSSe-based semiconductor lasers

Device characteristics and degradation of ZnMgSSe-based semiconductor lasers

Ion Transport Analysis by Extended Wannier Theory: II. Effect of Ion Density Gradient in the Transverse Direction

Interferometer with a wavelength-tuned diode laser for surface profilometry

Contact Info

Product

Resources

About