Green and Red Light-Emitting Diodes Based on Multilayer InGaN/GaN Dots Grown by Growth Interruption Method

Lv, Wenbin; Wang, Lai; Wang, Jiaxing; Xing, Yuchen; Zheng, Jiyuan; Yang, Di; Hao, Zhibiao; Luo, Yi

doi:10.7567/jjap.52.08jg13

Cited by 38 publications

(23 citation statements)

References 33 publications

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“…Also, we have demonstrated 665-nm InGaN-based red LEDs on β-Ga 2 O 3 substrates, allowing very low forward voltages below 2.5 V at 20 mA [16]. Other groups have also reported several approaches to obtain high-In-content InGaN-based LEDs, including InGaN/GaN multiple quantum dots [17], semipolar InGaN buffer layers [18], InGaN/GaN nanowires [19], and InGaN/GaN QWs on lattice-matched InGaN/ScAlMgO 4 (0001) templates [20]. Additionally, a unique nitride-based red LED has also been reported, which utilizes Eu-doped GaN instead of InGaN as the active layer [21].…”

Section: Introductionmentioning

confidence: 86%

Optimal ITO transparent conductive layers for InGaN-based amber/red light-emitting diodes

et al. 2020

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Fabrication of indium tin oxide (ITO) was optimized for InGaN-based amber/red light-emitting diodes (LEDs). A radiofrequency sputtering reduced the sheet resistivity of ITO at low pressures, and a subsequent two-step annealing resulted in a low sheet resistivity (below 2×10 −4 Ωcm) and high transmittance (over 98%) in the amber and red regions between 590 nm to 780 nm. Double ITO layers by sputtering could form an excellent ohmic contact with p-GaN. Application of the double ITO layers on amber and red LEDs enhanced light output power by 15.6% and 13.0%, respectively, compared to those using ITO by e-beam evaporation.

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Section: Introductionmentioning

confidence: 86%

Optimal ITO transparent conductive layers for InGaN-based amber/red light-emitting diodes

et al. 2020

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“…Materials Synthesis and Device Fabrication : The InGaN QDs were grown on a 2 in. (0001) GaN/sapphire template in an AIXTRON 2000HT MOCVD system by using the growth interruption method . Graphene was prepared by a conventional chemical vapor deposition method using 25 µm Cu foil as the catalytic substrate and a mixture of CH 4 and H 2 as the precursor .…”

Section: Methodsmentioning

confidence: 99%

Graphene on Self‐Assembled InGaN Quantum Dots Enabling Ultrahighly Sensitive Photodetectors

Tian

Liu

et al. 2019

Advanced Optical Materials

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high bias for APDs. Wide bandgap III-V GaN-based materials have attracted much attention owing to their continuously tunable energy bandgap from 0.7 to 6.2 eV, radiation durability, temperature stability, etc. [4,5] GaN-based photodetectors are urgently needed for military and civilian applications, such as plume detection, flame warning, chemical sensing, and solar astronomy. Many types of GaN-based photodetectors have been developed, such as p-i-n, Schottky barrier, and metalsemiconductor-metal structures. [6][7][8] However, the responsivity or sensitivity of GaN-based photodetectors is limited by the large dislocation densities in III-nitride materials (as high as 10 8 -10 10 cm −2 ) due to the lattice mismatch between the III-nitride material and foreign substrates. Especially for GaN-based APDs, which have very stringent requirements on crystalline quality, the large dislocation density hinders their further development.To improve the sensitivity of GaN-based photodetectors, surface plasmon resonant enhanced structures have been proposed via strong light coupling by localized surface plasmon resonance. [9,10] Graphene/GaN hybrid structures have also been proposed owing to the high light transmittance and easy Fermi level tunability of graphene. [11,12] However, such methods will only elevate the detection responsivity to tens of A W −1 , which is still not enough for weak photodetection. Due to the high quality and large surface-to-volume properties of the nanowires, GaN single nanowire-based photodetectors have been put forward with responsivities as high as 10 3 -10 7 A W −1 . [13][14][15] However, such photodetectors are not widely applicable because the complex fabrication process on a single nanowire is not suitable for mass production. Hence, obtaining nitride-based photodetectors with ultrahigh sensitivity remains a great challenge.In this work, a new type of photodetector based on a graphene/InGaN quantum dot (QD) hybrid structure is proposed, and this photodetector exhibits an ultrahigh responsivity over 10 9 A W −1 and an fW light detectivity at room temperature. For such structures, the gain, which originates from the recirculation of charge carriers in graphene during the lifetime of the photogenerated carriers, is denoted as [16][17][18][19] / lifetime transitwhere τ lifetime is the lifetime of the photogenerated carriers and τ transit is the carrier transit time in graphene between Highly sensitive photodetection is indispensable in applications, such as remote sensing, imaging, and smoke alarming. III-V nitrides are promising candidates for photodetectors due to their continuously tunable bandgap, radiation hardness, and temperature stability. However, the sensitivity of traditional III-V nitride-based photodetectors is limited by poor crystal quality which stems from lattice mismatch-induced point defects and dislocations. Recently, a new type of graphene-colloidal quantum dot (QD) hybrid phototransistor has been preferentially used to obtain high detection sensitivity, but III-V nitride-base...

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“…Oliver et al reported the realization of micro-disk InGaN laser on sapphire substrates via growth interruption method [21]. Other research groups also employ the similar growth interruption methods to improve the optical properties of light emitting devices [22][23][24][25]. In this work, we investigated the effect of different growth interruption time on the surface morphology and optical properties of InGaN QDs grown on 2-inch silicon substrates.…”

Section: Introductionmentioning

confidence: 99%

Surface morphology and optical properties of InGaN quantum dots with varying growth interruption time

Jin

Han

et al. 2019

Mater. Res. Express

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The effect of different growth interruption time on the surface morphology and optical properties of InGaN quantum dots (QDs) grown on 2-inch silicon substrates is investigated. The surface becomes rougher and the photoluminescence intensity has been enhanced significantly when employing the growth interruption method. Temperature-dependent photoluminescence and excitation powerdependent photoluminescence both present unchanged peak energy and line-width of QDs. The sharp increase of PL intensity in medium temperature regime is attributed to the fingerprint of the existence of InGaN QDs. The shape of the QDs are further confirmed by the transmission electron microscopy with a size of 3 nm by 4 nm. Among the samples, a growth interruption time of 30 s gives the best optical performance.

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Green and Red Light-Emitting Diodes Based on Multilayer InGaN/GaN Dots Grown by Growth Interruption Method

Cited by 38 publications

References 33 publications

Optimal ITO transparent conductive layers for InGaN-based amber/red light-emitting diodes

Optimal ITO transparent conductive layers for InGaN-based amber/red light-emitting diodes

Graphene on Self‐Assembled InGaN Quantum Dots Enabling Ultrahighly Sensitive Photodetectors

Surface morphology and optical properties of InGaN quantum dots with varying growth interruption time

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