Greater than 50% inversion in Erbium doped Chalcogenide waveguides

Abstract

We report Er-doped Ge-Ga-Se films and waveguides deposited using co-thermal evaporation and patterned with plasma etching. Strong photoluminescence at 1.54 µm with intrinsic lifetime of 1 ms was obtained from deposited films with 1490 nm excitation. Erbium population inversion up to 50% was achieved, with a maximum of ~55% possible at saturation for the first time to the author's knowledge, approaching the theoretical maximum of 65%. Whilst gain was not achieved due to the presence of upconversion pumped photoinduced absorption, this nonetheless represents a further important step towards the realization of future chalcogenide Erbium doped waveguide amplifiers at 1550 nm and in the Mid-infrared.

Study of plasmonic slot waveguides with a nonlinear metamaterial core: semi-analytical and numerical methods

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Enhanced 1.54 μm luminescence of a perfluorinated erbium complex sensitized by perfluorinated Pt(ii) and Zn(ii) phthalocyanines with 980 nm emission

“…This is so far the longest lifetime of organic sensitized Er 3+ 1.5 µm emission, which can even match those in inorganic systems. [32] The maximum photoluminescent quantum yield (PLQY) of 13% for the sensitized Er 3+ 1.5 µm emission in an organic co-doped system is obtained.…”

Rare‐earth‐incorporated low‐dimensional chalcogenides: Dry‐method syntheses and applications

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