1962
DOI: 10.1038/193569a0
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Graphitization of α-Silicon Carbide

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Cited by 72 publications
(44 citation statements)
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“…59,60 Although this recent work has triggered substantial interest in epitaxial graphene, it should be noted that reports of SiC graphitization date back several decades. 61 Furthermore, claims of epitaxial monolayer graphite (MG) on metal carbides at high temperatures using hydrocarbon precursors also exist from the early 1990's as have been comprehensively reviewed elsewhere. 62 Nevertheless, only the recent work on SiC has demonstrated graphene growth with sufficient quality for electronic applications.…”
Section: Synthesis and Growth Of Carbon Nanomaterialsmentioning
confidence: 99%
“…59,60 Although this recent work has triggered substantial interest in epitaxial graphene, it should be noted that reports of SiC graphitization date back several decades. 61 Furthermore, claims of epitaxial monolayer graphite (MG) on metal carbides at high temperatures using hydrocarbon precursors also exist from the early 1990's as have been comprehensively reviewed elsewhere. 62 Nevertheless, only the recent work on SiC has demonstrated graphene growth with sufficient quality for electronic applications.…”
Section: Synthesis and Growth Of Carbon Nanomaterialsmentioning
confidence: 99%
“…Badami [84]. He studied the samples with X-ray diffraction and found that the c-axis of graphite runs along the c-axis of the hexagonal SiC crystal [85].…”
Section: Growth Of Graphene On Sic Polar Facesmentioning
confidence: 99%
“…Carbon segregation from silicon carbide 38,59,60 or metal substrates 39,55,[61][62][63][64][65] , following high temperature annealing, can produce graphene. As early as 1896 E. G. Acheson reported a method to produce graphite from SiC 59 , while the segregation of graphene from Ni(111) was investigated over 30 years ago 61 .…”
Section: Carbon Segregationmentioning
confidence: 99%