Graphene: The quest for supercarbon

Peplow, Mark

doi:10.1038/503327a

Cited by 50 publications

(34 citation statements)

References 11 publications

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“…1 As such, it not only plays a central role in the working principle of modern semiconductor devices, but also sets the limit of device performances.…”

Section: Abstract: Bandgap Engineering Two-dimensional Semiconductormentioning

confidence: 99%

Universal Mechanism of Band-Gap Engineering in Transition-Metal Dichalcogenides

et al. 2017

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van der Waals two-dimensional (2D) semiconductors have emerged as a class of materials with promising device characteristics owing to the intrinsic band gap. For realistic applications, the ideal is to modify the band gap in a controlled manner by a mechanism that can be generally applied to this class of materials. Here, we report the observation of a universally tunable band gap in the family of bulk 2H transition metal dichalcogenides (TMDs) by in situ surface doping of Rb atoms. A series of angle-resolved photoemission spectra unexceptionally shows that the band gap of TMDs at the zone corners is modulated in the range of 0.8–2.0 eV, which covers a wide spectral range from visible to near-infrared, with a tendency from indirect to direct band gap. A key clue to understanding the mechanism of this band-gap engineering is provided by the spectroscopic signature of symmetry breaking and resultant spin-splitting, which can be explained by the formation of 2D electric dipole layers within the surface bilayer of TMDs. Our results establish the surface Stark effect as a universal mechanism of band-gap engineering on the basis of the strong 2D nature of van der Waals semiconductors.

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“…1 As such, it not only plays a central role in the working principle of modern semiconductor devices, but also sets the limit of device performances.…”

Section: Abstract: Bandgap Engineering Two-dimensional Semiconductormentioning

confidence: 99%

Universal Mechanism of Band-Gap Engineering in Transition-Metal Dichalcogenides

et al. 2017

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“…The use of graphene and reduced graphene oxide (GO) in electronic devices is a topic of much interest in scientific and engineering fields, however, several fundamental limitations must first be overcome before wide spread use of these materials is possible [1,2]. Generally, reduced graphene oxide (GO) is used if water dispersibility is desired, however it has the drawbacks of having higher sheet resistance and lower carrier mobility than even highly grained monolayer graphene sheets [3][4][5].…”

Section: Introductionmentioning

confidence: 99%

Identification of functional groups and determination of carboxyl formation temperature in graphene oxide using the XPS O 1s spectrum

Ng²,

2015

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“…Serious problems associated with the development of processing methods aimed at the mass production of micro-and macro-dimension crystalline graphene sheet are objective reasons for postponing the implementation of the graphene HP technology up to 2030 [1,3]. The latter is further exacerbated by the very high cost of this material [4]. Implementation of the LP technology has proved more successful.…”

Section: Introductionmentioning

confidence: 99%

Neutron scattering from graphene oxide paper and thermally exfoliated reduced graphene oxide

Sheka¹,

Natkaniec²,

Melnikov³

et al. 2015

Nanosist.: fiz. him. mat.

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Synthetic graphene oxide, in the form of graphene oxide paper (GOpp), and its reduction product -thermally exfoliated reduced graphene oxide (TErGO) -were studied by elastic and inelastic neutron scattering at low and room temperature conditions. The neutron diffraction patterns were analyzed to confirm stacking structures of both species consisting of 4 -6 and ∼ 8 layers of microsize lateral dimension and the interlayer distances of 7.21Å and 3.36Å, respectively. The one-phonon hydrogen amplitude-weighted density of vibrational states G(ω) represents the inelastic incoherent neutron scattering spectra of the products. The study has revealed the retained water in the freshly made GOpp, corresponding to the lowest humidity. The analysis of the TErGO G(ω) spectrum has disclosed the chemical composition of its circumference attributing the latter to sets of CH units with a minor presence of atomic oxygen.

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Graphene: The quest for supercarbon

Cited by 50 publications

References 11 publications

Universal Mechanism of Band-Gap Engineering in Transition-Metal Dichalcogenides

Universal Mechanism of Band-Gap Engineering in Transition-Metal Dichalcogenides

Identification of functional groups and determination of carboxyl formation temperature in graphene oxide using the XPS O 1s spectrum

Neutron scattering from graphene oxide paper and thermally exfoliated reduced graphene oxide

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