Graphene: Piecing it Together

Rümmeli, Mark H.; Rocha, C. G.; Ortmann, Frank; Ibrahim, Idowu David; Sevinçli, Hâldun; Börrnert, Felix; Kunstmann, Jens; Bachmatiuk, Alicja; Pötschke, M.; Shiraishi, Masashi; Meyyappan, M.; Büchner, B.; Roche, Stephan; Cuniberti, Gianaurelio

doi:10.1002/adma.201101855

Cited by 139 publications

(129 citation statements)

References 261 publications

(211 reference statements)

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“…The atoms then arrange into sp 2 carbon using a catalyst, usually a metal [8]. Therefore, CVD grows graphene on a thin metal film, and the graphene can subsequently be transferred to an insulating substrate.…”

Section: Graphene: the Wonder Materialsmentioning

confidence: 99%

“…This method is fairly clean as the support crystal, hexagonal α-SiC, provides the carbon and already matches the geometry. Also, no metal is involved [8]. However, the epitaxial process is not self-limiting, which means epitaxial graphene is usually several layers thick, and this added thickness can complicate the reduction process.…”

Section: Graphene: the Wonder Materialsmentioning

confidence: 99%

“…Graphene's band gap can be opened in two ways, physical confinement or chemical functionalization [8]. Confinement refers to shaping the graphene into small structures.…”

Section: Functionalized Graphenementioning

confidence: 99%

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Direct Writing of Graphene-based Nanoelectronics via Atomic Force Microscopy

Haydell¹,

Cimpoiasu²,

Lee³

et al. 2012

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The public reporting burden for this collection of information is estimated to average 1 hour per response, including the time for reviewing instructions, searching existing data sources, gathering and maintaining the data needed, and completing and reviewing the collection of information, Send comments regarding this burden estimate or any other aspect of this collection of information, including suggestions for reducing the burden, DISTRIBUTION/AVAILABILITY STATEMENTThis document has been approved for public release; its distribution is UNLIMITED SUPPLEMENTARY NOTES 14.ABSTRACTThis project employs direct writing with an atomic force microscope (AFM) to fabricate simple graphene-based electronic components like resistors and transistors at nanometer-length scales. The goal is to explore their electrical properties for graphene-based electronics. Conducting nanoribbons of graphene were fabricated using thennochemical nanolithography (TCNL). TCNL uses a heated AFM cantilever to provide precise local heating to an insulating fluorographene (FG) substrate. The heat reduces the substrate into a material known as reduced fluorographene (rFG), which exhibits electric properties similar to those of pristine graphene. Compared to other attempts to produce graphene-based devices, this technique is simple, does not involve solvents or other complicated fabrication steps, and allows for the exact placement of the devices on the wafer. ABSTRACTThis Trident project employs direct writing with an atomic force microscope (AFM) to fabricate simple graphene-based electronic components like resistors and transistors at nanometer-length scales. The goal is to explore their electronic properties and the feasibility of using this technique for the manufacturing of graphene-based electronics. The graphene devices are expected to be denser and faster, and to dissipate heat more efficiently than current silicon-based transistors. Here we fabricate conducting nanoribbons of graphene using two different AFM techniques, thermochemical nanolithography (TCNL) and thermal dip-pen nanolithography (tDPN). TCNL involves flowing current through an AFM tip to provide precise local heating to an insulating graphene substrate (graphene oxide or graphene fluoride). The heat reduces the substrate into a material known as reduced graphene oxide/fluoride (rGO/F) which exhibits electric properties close to those of pristine graphene. These nanoribbons can be used to fabricate nanoscale electronic components such as resistors, capacitors, and transistors.Compared to other attempts to produce graphene-based devices, this technique is simple, does not involve solvents or other complicated fabrication steps, and allows for the exact placement of the devices on the wafer. The thermal dip pen nanolithography uses a heated AFM tip dipped in polymer which leaves a layer of masking material on the surface of pristine graphene. When the 2 graphene sheet is functionalized through fluorination and thereby rendered insulating, the narrow layer of polymer locally p...

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Section: Graphene: the Wonder Materialsmentioning

confidence: 99%

Section: Graphene: the Wonder Materialsmentioning

confidence: 99%

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Direct Writing of Graphene-based Nanoelectronics via Atomic Force Microscopy

Haydell¹,

Cimpoiasu²,

Lee³

et al. 2012

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“…Both charge carrier mobility and thermal conductivity of graphene make it a promising candidate for becoming a future microelectronic material [1][2][3][4][5][6]. The best carrier mobility was measured in graphene that was prepared by mechanical exfoliation from graphite [7].…”

Section: Introductionmentioning

confidence: 99%

Dominantly epitaxial growth of graphene on Ni (1 1 1) substrate

Fogarassy

Rümmeli

Gorantla

et al. 2014

Applied Surface Science

Self Cite

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“…Figure 6. Relationship between optical microscope image and typical Raman spectra of monolayer [48,[59][60][61], bilayer [47,59,60,62], few layer [63][64][65], and multilayer [63,64] graphene.…”

Section: Figure 5amentioning

confidence: 99%

Optimization of the Synthesis Procedures of Graphene and Graphite Oxide

López¹,

Palomino²,

Silva³

et al. 2016

Recent Advances in Graphene Research

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The optimization of both the chemical vapor deposition (CVD) synthesis method to prepare graphene and the Improved Hummers method to prepare graphite oxide is reported. Copper and nickel were used as catalysts in the CVD-graphene synthesis, CH 4 and H 2 being used as precursor gases. Synthesis variables were optimized according to a thickness value, calculated using a homemade Excel-VBA application. In the case of copper, the maximum thickness value was obtained for those samples synthesized at 1050°C, a CH 4 /H 2 flow rate ratio of 0.07 v/v, a total flow of 60 Nml/min, and a time on stream of 10 min. In the case of nickel, a reaction temperature of 980°C, a CH 4 /H 2 flow rate ratio of 0.07 v/v, a total flow of 80 Nml/min, and a time on stream of 1 min were required to obtain a high thickness value. On the other hand, the Improved Hummers method used in the synthesis of graphite oxide was optimized. The resultant product was similar to that reported in literature in terms of quality and characteristics but both time and cost of the synthesis procedure were considerably decreased.

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Graphene: Piecing it Together

Cited by 139 publications

References 261 publications

Direct Writing of Graphene-based Nanoelectronics via Atomic Force Microscopy

Direct Writing of Graphene-based Nanoelectronics via Atomic Force Microscopy

Dominantly epitaxial growth of graphene on Ni (1 1 1) substrate

Optimization of the Synthesis Procedures of Graphene and Graphite Oxide

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