Graphene-Oxide-Assisted Synthesis of GaN Nanosheets as a New Anode Material for Lithium-Ion Battery

Abstract

As the most-studied III-nitride, theoretical researches have predicted the presence of gallium nitride (GaN) nanosheets (NSs). Herein, a facile synthesis approach is reported to prepare GaN NSs using graphene oxide (GO) as sacrificial template. As a new anode material of Li-ion battery (LIBs), GaN NSs anodes deliver the reversible discharge capacity above 600 mA h g at 1.0 A g after 1000 cycles, and excellent rate performance at current rates from 0.1 to 10 A g. These results not only extend the family of 2D materials but also facilitate their use in energy storage and other applications.

Bottom‐Up Fabrication of 1D Cu‐based Conductive Metal–Organic Framework Nanowires as a High‐Rate Anode towards Efficient Lithium Storage

“…[29] As is well established,t he unique 1D NWs always offer numerousa ppealingb enefits (e.g.,r apid electronic/ionic transport, strong tolerance to stress change, shorter ion diffusion length, etc.) [30][31][32][33] For example, the discharge capacities of the Cu-BDCN Ps ( % 228 mAh g À1 at 24 mA g À1 ) [22] and gallide nitride NSs ( % 380 mAh g À1 at 2000 mA g À1 ) [34] are both lower than that of our Cu-CATN Ws. [30][31][32][33] For example, the discharge capacities of the Cu-BDCN Ps ( % 228 mAh g À1 at 24 mA g À1 ) [22] and gallide nitride NSs ( % 380 mAh g À1 at 2000 mA g À1 ) [34] are both lower than that of our Cu-CATN Ws.…”

“…fore fficient energy storagec omparedw ith nanoparticles (NPs) and nanosheets (NSs). [30][31][32][33] For example, the discharge capacities of the Cu-BDCN Ps ( % 228 mAh g À1 at 24 mA g À1 ) [22] and gallide nitride NSs ( % 380 mAh g À1 at 2000 mA g À1 ) [34] are both lower than that of our Cu-CATN Ws.…”

High performance carbon-coated hollow Ni12P5 nanocrystals decorated on GNS as advanced anodes for lithium and sodium storage

“…(3) Decreasing polarization and resistances are directly connected to the increase of capacities. 48,49 Then rate capabilities are examined by discharging/charging at various current densities (Fig. 5b).…”

A new crystal family of GaNGeC quaternary compounds including direct band gap semiconductors and metals

“…12 GaN monolayers have been synthesized in experiments. [13][14][15][16] Moreover, threedimensional (3D) GaN has excellent electronic and optical properties, as a typical representative of third-generation semiconductors, and has been widely used in microwave communications, light-emitting diodes and laser diodes in the ultraviolet range. Recently, GaCN and GeCN ternary compounds, such as Ga 2 (CN 2 ) 3 and GeCN 2 had been predicted by the calculations from Materials Project.…”