Graphene on SiC as a promising platform for magnetic field detection under neutron irradiation

El-Ahmar, Semir; Szary, Maciej J.; Ciuk, Tymoteusz; Prokopowicz, R.; Dobrowolski, A.; Jagiełło, Joanna; Ziemba, Maciej

doi:10.1016/j.apsusc.2022.152992

Cited by 21 publications

(27 citation statements)

References 65 publications

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“…For GR/SiC, the effects of NR on Al 2 O 3 and SiC have a limited impact on the sensing performance of the structure [ 16 ]. Rather, it was reported that the main effects influencing detection occur in the close vicinity of the graphene sheet.…”

Section: Resultsmentioning

confidence: 99%

“…However, PKAs of graphene are unlikely to initiate cascades in the sheet due to its 2D nature. It was reported that the primary damage to the graphene sheet in GR/SiC is 15 %, with the remaining 85 % being a product of secondary effects, such as interdiffusion and loss of hydrogen intercalation [ 16 ]. Consequently, after the irradiation of G1H , 0.0086‰ of atoms in graphene should have been affected.…”

Section: Resultsmentioning

confidence: 99%

“…It was predicted that, for the irradiated QFS H-intercalated Al 2 O 3 /GR/SiC structure, temperatures above 200 ° C facilitate the diffusion of hydrogen atoms from areas with higher coverage to areas with less coverage. This effect can reduce the surface area, where intercalation is too low to support graphene separation [ 16 ]. Consequently, the electrical response of the system observed in high-temperature Hall-effect measurements is caused by the scattered hydrogen atoms, which limits the local interactions of graphene with the SiC substrate.…”

Section: Resultsmentioning

confidence: 99%

“…Current research on materials capable of stably detecting magnetic fields under extreme conditions in tokamaks focuses mainly on thin films made of chromium [ 5 ], bismuth [ 8 , 9 , 10 ], gold, and antimony [ 11 , 12 ], but III-V compound semiconductors have also been investigated [ 13 , 14 , 15 ]. Furthermore, recent reports have also considered the viability of two-dimensional (2D) materials in the form of quasi-free-standing (QFS) epitaxial Chemical Vapor Deposition (CVD) graphene on semi-insulating silicon carbide (GR/SiC) [ 16 ] or CVD graphene transferred onto a sapphire substrate [ 17 ].…”

Section: Introductionmentioning

confidence: 99%

“…The usefulness of the GR/SiC platform in magnetic field detection has been verified, and its potential for stable work at temperatures as high as 500 °C has also been proven [ 4 , 20 ]. Furthermore, its resistance to NR was only recently indicated [ 16 ].…”

Section: Introductionmentioning

confidence: 99%

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The Comparison of InSb-Based Thin Films and Graphene on SiC for Magnetic Diagnostics under Extreme Conditions

El-Ahmar

Przychodnia

Jankowski

et al. 2022

Sensors

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The ability to precisely measure magnetic fields under extreme operating conditions is becoming increasingly important as a result of the advent of modern diagnostics for future magnetic-confinement fusion devices. These conditions are recognized as strong neutron radiation and high temperatures (up to 350 °C). We report on the first experimental comparison of the impact of neutron radiation on graphene and indium antimonide thin films. For this purpose, a 2D-material-based structure was fabricated in the form of hydrogen-intercalated quasi-free-standing graphene on semi-insulating high-purity on-axis 4H-SiC(0001), passivated with an Al2O3 layer. InSb-based thin films, donor doped to varying degrees, were deposited on a monocrystalline gallium arsenide or a polycrystalline ceramic substrate. The thin films were covered with a SiO2 insulating layer. All samples were exposed to a fast-neutron fluence of ≈7×1017 cm−2. The results have shown that the graphene sheet is only moderately affected by neutron radiation compared to the InSb-based structures. The low structural damage allowed the graphene/SiC system to retain its electrical properties and excellent sensitivity to magnetic fields. However, InSb-based structures proved to have significantly more post-irradiation self-healing capabilities when subject to proper temperature treatment. This property has been tested depending on the doping level and type of the substrate.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

The Comparison of InSb-Based Thin Films and Graphene on SiC for Magnetic Diagnostics under Extreme Conditions

El-Ahmar

Przychodnia

Jankowski

et al. 2022

Sensors

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Very High Temperature Hall Sensors in a Wafer‐Scale 4H‐SiC Technology

Okeil,

Erlbacher,

Wachutka

2024

Adv Materials Technologies

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Abstract4H‐SiC is a key enabler for realizing integrated electronics operating in harsh environments, which exhibit very high temperatures. Through advances in 4H‐SiC process technology, different sensor and circuit types have been demonstrated to operate stable at temperatures as high as 800 °C, paving the way toward harsh‐environment immune smart sensors. In this work, for the first time the operation of ion‐implanted 4H‐SiC Hall sensors realized in a wafer scale Bipolar‐CMOS‐DMOS technology is demonstrated at a wide operation temperature range spanning room temperature up to 500 °C in addition to short‐term operation up to 600 °C. The temperature‐dependent sensor characteristics of 15–22 samples are evaluated in terms of sensitivity and noise. The small inter‐device variations reflect the stability of the used process for very high temperature Hall sensors. The noise‐limited detectivity is further evaluated, revealing a best value of 950 nT/ and a mean detectivity of 1 µT/ at 500 °C. This is the best value reported up to date for very high temperature Hall sensors, besides being the first demonstration of ion‐implanted wide‐bandgap Hall sensors. Overall, the results reflect the potential of the demonstrated Hall sensors for the next generation of integrated magnetic field sensors in harsh environments.

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Enhancing surface activity in MoTe2 monolayers through p-block doping: A comprehensive DFT investigation

Florjan,

Szary

2024

Acta Materialia

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Graphene on SiC as a promising platform for magnetic field detection under neutron irradiation

Cited by 21 publications

References 65 publications

The Comparison of InSb-Based Thin Films and Graphene on SiC for Magnetic Diagnostics under Extreme Conditions

The Comparison of InSb-Based Thin Films and Graphene on SiC for Magnetic Diagnostics under Extreme Conditions

Very High Temperature Hall Sensors in a Wafer‐Scale 4H‐SiC Technology

Enhancing surface activity in MoTe2 monolayers through p-block doping: A comprehensive DFT investigation

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