Very High Temperature Hall Sensors in a Wafer‐Scale 4H‐SiC Technology
Hesham Okeil,
Tobias Erlbacher,
Gerhard Wachutka
Abstract:Abstract4H‐SiC is a key enabler for realizing integrated electronics operating in harsh environments, which exhibit very high temperatures. Through advances in 4H‐SiC process technology, different sensor and circuit types have been demonstrated to operate stable at temperatures as high as 800 °C, paving the way toward harsh‐environment immune smart sensors. In this work, for the first time the operation of ion‐implanted 4H‐SiC Hall sensors realized in a wafer scale Bipolar‐CMOS‐DMOS technology is demonstrated … Show more
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