Graphene nanopattern as a universal epitaxy platform for single-crystal membrane production and defect reduction

Kim, Hyunseok; Lee, Sangho; Shin, Jiho; Zhu, Menglin; Akl, Marx; Lu, Kuangye; Han, Ne Myo; Baek, Yongmin; Chang, Celesta S.; Suh, Jun Min; Kim, Ki-Seok; Park, Bo‐In; Zhang, Yanming; Choi, Chanyeol; Shin, Hyeong Cheol; Yu, Huashun; Meng, Yuan; Kim, Seung‐Il; Seo, Seungju; Kum, Hyun; Lee, Jae-Hyun; Ahn, Jong Hyun; Bae, Sang‐Hoon; Hwang, Jinwoo; Shi, Yunfeng; Kim, J.

doi:10.1038/s41565-022-01200-6

Cited by 28 publications

(27 citation statements)

References 41 publications

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“…Very recently, Hyunseok Kim et al. have further demonstrated the epitaxy growth of single-crystal films for both elemental (e.g., Ge) and compound semiconductors (e.g., GaAs) with graphene nanopatterns as a universal platform and proved the exfoliation of the grown films with good controllability regardless of film thickness due to the weak interfaces intentionally formed by graphene stripes. , …”

Section: Dm Templated-assisted Growth and Transfer Of Non-2d Function...mentioning

confidence: 99%

“…Very recently, Hyunseok Kim et al have further demonstrated the epitaxy growth of single-crystal films for both elemental (e.g., Ge) and compound semiconductors (e.g., GaAs) with graphene nanopatterns as a universal platform and proved the exfoliation of the grown films with good controllability regardless of film thickness due to the weak interfaces intentionally formed by graphene stripes. 7,52 While polar two-dimensional materials, such as hBN and 2D TMDCs, are expected to screen the crystal potential of the substrate and prohibit remote epitaxy, there have been experimental observations of growth template effects of MoS 2 monolayer for AlN(0001) 86,87 and Mo(110), 88 where epitaxial growths of materials with the crystal symmetry similar to the MoS 2 monolayer are demonstrated as shown in Figure 4d−f. The Mo(110)/MoS 2 work also shows that a mechanical exfoliation of the deposited layer stack is possible, similar to the layers grown on top of graphene, which enables the growth and transfer of high-quality, nonpolar (pseudo)hexagonal layers onto desired substrates.…”

Section: Dm Templated-assisted Growth and Transfer Of Non-2d Function...mentioning

confidence: 99%

“…In this regard, 2DMs have an intrinsic advantage with their layer-by-layer transferability from their growth wafers to arbitrary substrates, owing to their weak van der Waals interaction with the growth substrates. Leveraging on this special property of 2DMs, a great deal of efforts have been made by the 2DM research community and the relevant industry to develop various 2DM layer/film transfer methods, leading to recent demonstrations of successful wafer-scale transfers of 2DMs, most notably TMDC layers/films. ,, More recently, van der Waals template-assisted growth and transfer of other functional materials such as III–V semiconductors have also been reported, − which promises a monolithic 3D integration of layers with functionalities not available for 2DMs and other conventional BEOL transistor/memory materials (e.g., InZnO and HfO 2 ).…”

Section: Introductionmentioning

confidence: 99%

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Van der Waals Layer Transfer of 2D Materials for Monolithic 3D Electronic System Integration: Review and Outlook

Kim

Ang

et al. 2023

ACS Nano

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Two-dimensional materials (2DMs) have attracted a great deal of interest due to their immense potential for scientific breakthroughs and technological innovations. While some 2D transition metal dichalcogenides (TMDC) such as MoS2 and WS2 are considered as the ultimate channel materials in unltrascaled transistors as replacements for Si, there has also been increasing interest in the monolithic 3D integration of 2DMs on the Si CMOS platform or in flexible electronics as back-end-of-line transistors, memory devices/selectors, and sensors, taking advantage of 2DM properties such as a high current driving capability with low leakage current, nonvolatile switching characteristics, a large surface-to-volume ratio, and a tunable bandgap. However, the realization of both of these scenarios critically depends on the development of manufacturing-viable high-yield 2DM layers transfer from the growth substrate to the Si, since the growth of high-quality 2DM layers often requires a high-temperature growth process on template substrates. Motivated by this, extensive efforts have been made by the 2DM research community to develop various 2DM layer transfer methods, leveraging the van der Waals transfer capability of the layer-structured 2DMs. These efforts have led to a number of successful demonstrations of wafer-scale 2D TMDC layer transfer, while 2DM-enabled template growth/transfer of some functional bulk materials such as III–V, Ge, and AlN has also been demonstrated. This review surveys and compares different 2DM transfer methods developed recently, with a focus on large-area 2D TMDC film transfer along with an introduction of 2DM template-assisted van der Waals growth/transfer of non-2D thin films. We will also briefly present an outlook of our envisioned multifunctionalities in 3D integrated electronic systems enabled by monolithic 3D integration of 2DMs and III–V via van der Waals transfer and discuss possible technology options for overcoming remaining challenges.

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Section: Dm Templated-assisted Growth and Transfer Of Non-2d Function...mentioning

confidence: 99%

Section: Dm Templated-assisted Growth and Transfer Of Non-2d Function...mentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Van der Waals Layer Transfer of 2D Materials for Monolithic 3D Electronic System Integration: Review and Outlook

Kim

Ang

et al. 2023

ACS Nano

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“…I-V ds characteristics of WS 2 epilayer-based photodetector according to V gs [ 82 ], f . Fabrication procedure of GaN microrod/micropyramid arrays by using the vdW epitaxy [ 83 ], g. Cross-sectional high-resolution TEM image and SAED patterns of AlN thin-film grown on the graphene/NPSS [ 30 ], h. Cross-sectional SEM image and red light-emitting images of the remote epitaxial AlGaAs LED [ 90 ], i . Schematic image of DUV-LED on the h-BN/sapphire wafer.…”

Section: Applicationsmentioning

confidence: 99%

“…For instance, III-V thin-films produced from remote epitaxy can be handled by 2DLT to realize diverse photonic devices [ 7 , 42 , 88 – 94 ] for photonic integrated circuits and exploring nanophotonic physics [ 95 – 100 ]. Figure 4 h displays the cross-sectional SEM image and the light-emitting images of flexible AlGaAs LED [ 90 ]. Beside the LEDs with visible light (red, green and blue light), DUV AlGaN LED with a 281 nm wavelength was realized by the remote epitaxy, as shown in Fig.…”

Section: Applicationsmentioning

confidence: 99%

Applications of remote epitaxy and van der Waals epitaxy

et al. 2023

Self Cite

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Epitaxy technology produces high-quality material building blocks that underpin various fields of applications. However, fundamental limitations exist for conventional epitaxy, such as the lattice matching constraints that have greatly narrowed down the choices of available epitaxial material combinations. Recent emerging epitaxy techniques such as remote and van der Waals epitaxy have shown exciting perspectives to overcome these limitations and provide freestanding nanomembranes for massive novel applications. Here, we review the mechanism and fundamentals for van der Waals and remote epitaxy to produce freestanding nanomembranes. Key benefits that are exclusive to these two growth strategies are comprehensively summarized. A number of original applications have also been discussed, highlighting the advantages of these freestanding films-based designs. Finally, we discuss the current limitations with possible solutions and potential future directions towards nanomembranes-based advanced heterogeneous integration. Graphical Abstract

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Establishing Epitaxial Connectedness in Multi‐Stacking: The Survival of Thru‐Holes in Thru‐Hole Epitaxy

Lee,

Choi

et al. 2023

Adv Eng Mater

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Thru‐hole epitaxy has recently been reported to be able to grow readily detachable domains crystallographically aligned with the underlying substrate over 2D mask material transferred onto a substrate. [Jang et al., Adv. Mater. Interfaces 2023, 10, 2201406] While the experimental demonstration of thru‐hole epitaxy of GaN over multiple stacks of h‐BN was evident, the detailed mechanism of how small holes in each stack of h‐BN survived as thru‐holes during multiple stacking of h‐BN was not intuitively clear. Here, Monte Carlo simulations is used to investigate the conditions under which holes in each stack of 2D mask layers can survive as thru‐holes during multiple stacking. If holes are highly anisotropic in shape by connecting smaller holes in a particular direction, thru‐holes can be maintained with a high survival rate per stack, establishing more epitaxial connectedness. Our work verifies and supports that thru‐hole epitaxy is attributed to the epitaxial connectedness established by thru‐holes surviving even through multiple stacks.

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Graphene nanopattern as a universal epitaxy platform for single-crystal membrane production and defect reduction

Cited by 28 publications

References 41 publications

Van der Waals Layer Transfer of 2D Materials for Monolithic 3D Electronic System Integration: Review and Outlook

Van der Waals Layer Transfer of 2D Materials for Monolithic 3D Electronic System Integration: Review and Outlook

Applications of remote epitaxy and van der Waals epitaxy

Establishing Epitaxial Connectedness in Multi‐Stacking: The Survival of Thru‐Holes in Thru‐Hole Epitaxy

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