Graphene <i>Q</i>-switched Yb:KYW planar waveguide laser

Kim, Jun Wan; Choi, Sun Young; Aravazhi, S.; Pollnau, Markus; Griebner, Uwe; Petrov, Valentín; Bae, Sukang; Ahn, Kwang Jun; Rotermund, Fabıan

doi:10.1063/1.4905785

Cited by 20 publications

(10 citation statements)

References 34 publications

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“…Besides, 2D materials can be easily integrated with photonic structures such as waveguides and cavities, since the surfaces of 2D materials can be passivated without any dangling bonds. Based on the unique optical properties of 2D materials, many important optical applications have been realized in integrated photonics, including waveguide polarizers, mode-locked, waveguide amplifier 6 and Q-switched waveguide lasers 3 7 8 9 10 11 . Taking the Q-switched pulsed waveguide laser for example, a waveguide structure with doping of rare-earth ions could be used as the gain medium and 2D materials with the saturable absorption property can be coated onto the waveguide facet as broadband optical saturable absorbers.…”

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confidence: 99%

Tailoring nonlinear optical properties of Bi2Se3 through ion irradiation

Tan

Guo

Shang

et al. 2016

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The nonlinear optical property of topological insulator bismuth selenide (Bi2Se3) is found to be well-tailored through ion irradiation by intentionally introducing defects. The increase of the optical modulation depth sensitively depends on the careful selection of the irradiation condition. By implementing the ion irradiated Bi2Se3 film as an optical saturable absorber device for the Q-switched wave-guide laser, an enhanced laser performance has been obtained including narrower pulse duration and higher peak power. Our work provides a new approach of tailoring the nonlinear optical properties of materials through ion irradiation, a well-developed chip-technology, which could find wider applicability to other layered two-dimensional materials beyond topological insulators, such as graphene, MoS2, black phosphours etc.

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confidence: 99%

Tailoring nonlinear optical properties of Bi2Se3 through ion irradiation

Tan

Guo

Shang

et al. 2016

Sci Rep

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“…The KRE(WO4)2:Yb 3+ gain medium exhibits transition cross-sections significantly higher than those of many other Yb 3+ -doped materials, such as YAG:Yb 3+ [6,7]. By use of a lattice-engineering approach [8,9,10], a crystalline waveguiding epitaxial layer with high amounts of Yb 3+ ions can be grown onto an undoped KY(WO4)2 substrate, enabling efficient continuous-wave (CW) [11] and Q-switched [12,13,14] KRE(WO4)2:Yb 3+ planar waveguide lasers. By further micro-structuring of the KRE(WO4)2:Yb 3+ waveguide layer, lowthreshold [15], high-efficiency [16], and tunable [17] channel waveguide lasers can be realized.…”

Section: Introductionmentioning

confidence: 99%

Gain dynamics in a highly ytterbium-doped potassium double tungstate thin-film amplifier

Yong

Aravazhi

Vázquez-Córdova

et al. 2019

Solid State Lasers XXVIII: Technology and Devices

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Active media with high rare-earth concentrations are essential for small-footprint waveguide amplifiers. When operating at high population inversion, such devices are often affected by undesired energy-transfer processes and thermal effects. In this work, we study a 32-µm-thick epitaxial layer of potassium gadolinium ytterbium double tungstate with a high Yb content of 57at.%, representing an Yb 3+ concentration of ~3.8 × 10 21 per cubic centimeter, grown onto an un-doped KY(WO4)2 substrate. The pump absorption, luminescence decay, and small-signal gain are investigated under intense pumping conditions. Spectroscopic signatures of an energy-transfer process and of quenched ions, as well as thermal effects are observed. We present a gain model which takes into account excessive heat generated due to the abovementioned experimental observations. Based on finite-element calculations, we find that the net gain is significantly reduced due to, firstly, a fraction of Yb 3+ ions not contributing to stimulated emission, secondly, a reduction of population inversion owing to a parasitic energy-transfer process and, thirdly, degradation of the effective transition cross-sections owing to device heating. Nevertheless, a signal enhancement of 8.1 dB was measured from the sample at 981 nm wavelength when pumping at 932 nm. The corresponding signal net gain of ~800 dB/cm, which was achieved without thermal management, is promising for waveguide amplifier operating without active cooling.

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“…This method allows one to increase the interaction length with the SA, avoid its heating, and reduce the insertion losses. It is well known and has been extensively studied at ∼1 μm in WG lasers based on Yb 3 and Nd 3 ions [38][39][40][41][42]. SWCNTs have also been employed in this WG laser geometry.…”

Section: Introductionmentioning

confidence: 99%

Passively Q-switched femtosecond-laser-written thulium waveguide laser based on evanescent field interaction with carbon nanotubes

et al. 2018

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Surface channel waveguides (WGs) were fabricated in a monoclinic Tm 3 :KLuWO 4 2 crystal by femtosecond direct laser writing (fs-DLW). The WGs consisted of a half-ring cladding with diameters of 50 and 60 μm located just beneath the crystal surface. They were characterized by confocal laser microscopy and μ-Raman spectroscopy, indicating a reduced crystallinity and stress-induced birefringence of the WG cladding. In continuous-wave (CW) mode, under Ti:sapphire laser pumping at 802 nm, the maximum output power reached 171.1 mW at 1847.4 nm, corresponding to a slope efficiency η of 37.8% for the 60 μm diameter WG. The WG propagation loss was 0.7 0.3 dB∕cm. The top surface of the WGs was spin-coated by a polymethyl methacrylate film containing randomly oriented (spaghetti-like) arc-discharge single-walled carbon nanotubes serving as a saturable absorber based on evanescent field coupling. Stable passively Q-switched (PQS) operation was achieved. The PQS 60 μm diameter WG laser generated a record output power of 150 mW at 1846.8 nm with η 34.6%. The conversion efficiency with respect to the CW mode was 87.6%. The best pulse characteristics (energy/duration) were 105.6 nJ/98 ns at a repetition rate of 1.42 MHz.

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Graphene Q-switched Yb:KYW planar waveguide laser

Cited by 20 publications

References 34 publications

Tailoring nonlinear optical properties of Bi2Se3 through ion irradiation

Tailoring nonlinear optical properties of Bi2Se3 through ion irradiation

Gain dynamics in a highly ytterbium-doped potassium double tungstate thin-film amplifier

Passively Q-switched femtosecond-laser-written thulium waveguide laser based on evanescent field interaction with carbon nanotubes

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