Graphene Film Growth on Polycrystalline Metals

Edwards, Rebecca S.; Coleman, Karl S.

doi:10.1021/ar3001266

Cited by 135 publications

(82 citation statements)

References 65 publications

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“…Since graphene growth is governed by the size of the underlying crystal structure, it is also important to control the crystal domain size of the metal substrate [84]. Edwards et al [85] published a review paper summarizing the different polycrystalline metal substrates that have been used to synthesize largedomain graphene. According to the paper, it is possible to synthesize graphene on a wide range of polycrystalline transition metal substrates.…”

Section: Surface Morphologymentioning

confidence: 99%

A critical review on the contributions of chemical and physical factors toward the nucleation and growth of large-area graphene

et al. 2018

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Since the first isolation of graphene over a decade ago, research into graphene has exponentially increased due to its excellent electrical, optical, mechanical and chemical properties. Graphene has been shown to enhance the performance of various electronic devices. In addition, graphene can be simply produced through chemical vapor deposition (CVD). Although the synthesis of graphene has been widely researched, especially for CVD growth method, the lack of understanding on various synthetic parameters still limits the fabrication of large-area and defect-free graphene films. This report critically reviews various parameters affecting the quality of CVD-grown graphene to understand the relationship between these parameters and the choice of metal substrates and to provide a point of reference for future studies of large-area, CVD-grown graphene.

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Section: Surface Morphologymentioning

confidence: 99%

A critical review on the contributions of chemical and physical factors toward the nucleation and growth of large-area graphene

et al. 2018

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“…In addition, the recrystallization of the Cu substrate infers a change in the crystallographic orientation. Thus, various studies of how the Cu crystallographic orientation affects graphene nucleation have been reported [47][48][49]. Electron back-scatter diffraction mapping was employed to determine the crystal orientation in a Cu foil, and numerous Cu facets, such as the Cu (100), Cu (310), Cu (410), Cu (632), and Cu (110) facets were observed.…”

Section: Substrate Pretreatmentmentioning

confidence: 99%

Overlook of current chemical vapor deposition-grown large single-crystal graphene domains

Park¹,

Kim²,

Park³

2014

Carbon letters

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Exceptional progress has been made with chemical vapor deposition (CVD) of graphene in the past few years. Not only has good monolayer growth of graphene been achieved, but large-area synthesis of graphene sheets has been successful too. However, the polycrystalline nature of CVD graphene is hampering further progress as graphene property degrades due to presence of grain boundaries. This review will cover factors that affect nucleation of graphene and how other scientists sought to obtain large graphene domains. In addition, the limitation of the current research trend will be touched upon as well.

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“…With such technique, graphene synthesis is typically obtained by employing transition catalytic metals in order to reduce the activation energy of carbon decomposition from a hydrocarbon gas [10, [15][16][17][18][19][20][21]. Among the possible catalysts [22], the two most widely employed are Cu and Ni, each producing a different mechanism depending on the carbon solubility. Carbon has a low solubility in Cu and it is adsorbed only on the surface [23], whereas it is highly soluble in Ni where, after absorption, it diffuses through the metal and eventually post-segregate on the surface [21,[23][24][25].…”

Section: Introductionmentioning

confidence: 99%

Low temperature direct growth of graphene patterns on flexible glass substrates catalysed by a sacrificial ultrathin Ni film

Marchena¹,

Janner²,

Chen³

et al. 2016

Opt. Mater. Express

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Direct deposition of graphene on substrates would avoid costly, time consuming and defect inducing transfer techniques. In this paper we used ultrathin films of Ni, with thickness ranging from 5 to 50 nm, as a catalytic surface on glass to seed and promote chemical vapor deposition (CVD) of graphene. Different regimes and dynamics were studied for various parameters including temperature and reaction time. When a critical temperature (700 °C) was reached, Ni films retracted and holes formed that are open to the glass surface, where graphene deposited. After CVD, the residual Ni could be etched away and the glass substrate with graphene regained maximum transparency (>90%). The fact that we could achieve low growth temperatures indicates the potential of the technique to widen the range of substrate materials over which graphene can be directly deposited. We demonstrated this by depositing graphene patterns on ultrathin, 100 μm thick, sheet of glass with low strain point (670 °C), particularly suitable for flexible electronic and optoelectronic devices. Kodambaka, and S.-Y. Kwon, "Near room-temperature synthesis of transfer-free graphene films," Nat. Commun. 3, 645 (2012). 35. M. Kosaka, S. Takano, K. Hasegawa, and S. Noda, "Direct synthesis of few-and multi-layer graphene films on dielectric substrates by "etching-precipitation" method," Carbon 82, 254-263 (2015). 36.

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Graphene Film Growth on Polycrystalline Metals

Cited by 135 publications

References 65 publications

A critical review on the contributions of chemical and physical factors toward the nucleation and growth of large-area graphene

A critical review on the contributions of chemical and physical factors toward the nucleation and growth of large-area graphene

Overlook of current chemical vapor deposition-grown large single-crystal graphene domains

Low temperature direct growth of graphene patterns on flexible glass substrates catalysed by a sacrificial ultrathin Ni film

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