“…The large width will increase the channel surface area defining the number of immobilized bioreceptors at the sensor surface which directly influences the target binding, although it might compromise device's electronic performance. Indeed, our device's channel provides a high W/L ratio when compared to other groups that report W/L ratios of 1 or lower, [23] which will, in turn, reflect in higher carrier mobility. This emphasises the importance of incorporating diazonium-based chemistry on devices that have low mobility at start, which in turn lowers device's sensitivity as a biosensor.…”
Section: Choosing the Right Diazonium Ligand For Improving Fet Mobilitymentioning
“…The large width will increase the channel surface area defining the number of immobilized bioreceptors at the sensor surface which directly influences the target binding, although it might compromise device's electronic performance. Indeed, our device's channel provides a high W/L ratio when compared to other groups that report W/L ratios of 1 or lower, [23] which will, in turn, reflect in higher carrier mobility. This emphasises the importance of incorporating diazonium-based chemistry on devices that have low mobility at start, which in turn lowers device's sensitivity as a biosensor.…”
Section: Choosing the Right Diazonium Ligand For Improving Fet Mobilitymentioning
“…In this context, Alam et al created a graphene-based ferroelectric FET having a mobility ~ 4.2 × 10 4 cm 2 /Vs, and about a 10 3 on/off ratio. 146 Fig. 5 (a, b) STM image of synthesized GNR on Au and a schematic of a graphene nanoribbon FET (reprinted with permission from Ref.…”
We have evaluated some of the most recent breakthroughs in the synthesis and applications of graphene and graphene-based nanomaterials. This review includes three major categories. The first section consists of an overview of the structure and properties, including thermal, optical, and electrical transport. Recent developments in the synthesis techniques are elaborated in the second section. A number of top–down strategies for the synthesis of graphene, including exfoliation and chemical reduction of graphene oxide, are discussed. A few bottom–up synthesis methods for graphene are also covered, including thermal chemical vapor deposition, plasma-enhanced chemical vapor deposition, thermal decomposition of silicon, unzipping of carbon nanotubes, and others. The final section provides the recent innovations in graphene applications and the commercial availability of graphene-based devices.
“…To overcome this challenge, several approaches have been investigated to achieve a high ON/OFF current ratio in GFETs. For example, quantum confinement in graphene nanoribbons can lead to the opening of a finite bandgap, ,,, which can be translated into an ON/OFF current ratio of ∼10 3 in GFETs. , GFETs with high-k gate dielectrics such as ferroelectric barium titanate can also demonstrate ON/OFF current ratios of ∼10 4 . Electrochemical modification of the graphene channel through the use of electrolyte gating with honey, organic liquids, etc., can also lead to ON/OFF current ratios exceeding 10 8 in GFETs, albeit with limited yield and relatively poor endurance. , Finally, vertical heterostructure designs of graphene with other semiconducting materials (Si, Ge, WS 2 ) have reported ON/OFF current ratios as high as ∼10 6 . ,,, …”
Extraordinarily high carrier mobility in graphene has led to many remarkable discoveries in physics and at the same time invoked great interest in graphene-based electronic devices and sensors. However, the poor ON/OFF current ratio observed in graphene field-effect transistors has stymied its use in many applications. Here, we introduce a graphene strain-effect transistor (GSET) with a colossal ON/OFF current ratio in excess of 10 7 by exploiting strain-induced reversible nanocrack formation in the source/drain metal contacts with the help of a piezoelectric gate stack. GSETs also exhibit steep switching with a subthreshold swing (SS) < 1 mV/decade averaged over ∼6 orders of magnitude change in the source-to-drain current for both electron and hole branch amidst a finite hysteresis window. We also demonstrate high device yield and strain endurance for GSETs. We believe that GSETs can significantly expand the application space for graphene-based technologies beyond what is currently envisioned.
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