Graphene Epitaxial growth on SiC(0001) for resistance standards

Real, Mariano; Shen, Tian; Jones, George R.; Elmquist, Randolph E.; Soons, Johannes A.; Davydov, Albert V.

doi:10.1109/cpem.2012.6251072

Cited by 8 publications

(15 citation statements)

References 20 publications

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“…If p = 2 [10,25], then the exponent in the temperature-scaling relation is 0.5 [21,26-28] which is consistent with our experimental results obtained on Dirac fermions. We note that our experimental results are equivalent to a T 4 dependence of energy loss rate for Dirac fermions as calculated [29] and observed in epitaxial, CVD-grown and exfoliated graphene [10,30].…”

Section: Resultssupporting

confidence: 89%

“…First, the SiC substrate was cleaned using a standard procedure for substrate cleaning [21]. Second, the optically polished Si-face surface was placed face-to-face with a polished graphite disk (FTG) and arranged such that uniform Newton rings were observed in fluorescent light [21]. The optically finished substrate surfaces resulted in a higher rate of SiC decomposition compared to chemical–mechanical processed (CMP) surfaces and created multiple graphene layers.…”

Section: Methodsmentioning

confidence: 99%

“…In this paper, we report magnetotransport measurements on multilayer epitaxial graphene of few layers obtained under conditions which favor controlled growth at high temperatures [21]. Dirac fermion heating in the high current limit is studied.…”

Section: Introductionmentioning

confidence: 99%

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Dirac fermion heating, current scaling, and direct insulator-quantum Hall transition in multilayer epitaxial graphene

et al. 2013

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We have performed magnetotransport measurements on multilayer epitaxial graphene. By increasing the driving current I through our graphene devices while keeping the bath temperature fixed, we are able to study Dirac fermion heating and current scaling in such devices. Using zero-field resistivity as a self thermometer, we are able to determine the effective Dirac fermion temperature (TDF) at various driving currents. At zero field, it is found that TDF ∝ I≈1/2. Such results are consistent with electron heating in conventional two-dimensional systems in the plateau-plateau transition regime. With increasing magnetic field B, we observe an I-independent point in the measured longitudinal resistivity ρxx which is equivalent to the direct insulator-quantum Hall (I-QH) transition characterized by a temperature-independent point in ρxx. Together with recent experimental evidence for direct I-QH transition, our new data suggest that such a transition is a universal effect in graphene, albeit further studies are required to obtain a thorough understanding of such an effect.

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Section: Resultssupporting

confidence: 89%

Section: Methodsmentioning

confidence: 99%

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Dirac fermion heating, current scaling, and direct insulator-quantum Hall transition in multilayer epitaxial graphene

et al. 2013

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“…The quantum Hall effect (QHE) [3, 7], a phenomenon which is observed under Landau quantization, has been widely studied in graphene [2, 3, 7]. Characterization of electronic transport, for example in the research of graphene-based quantum Hall (QH) resistance standards [8, 9, 10], requires measurements of the carrier density since it plays a crucial role in determining the magnetic field dependence of device transport properties. Therefore, it is necessary to find a reliable method to determine the carrier density in particular at different temperatures.…”

Section: Introductionmentioning

confidence: 99%

Temperature dependence of electron density and electron–electron interactions in monolayer epitaxial graphene grown on SiC

et al. 2017

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We report carrier density measurements and electron-electron (e-e) interactions in monolayer epitaxial graphene grown on SiC. The temperature (T)-independent carrier density determined from the Shubnikov-de Haas (SdH) oscillations clearly demonstrates that the observed logarithmic temperature dependence of Hall slope in our system must be due to e-e interactions. Since the electron density determined from conventional SdH measurements does not depend on e-e interactions based on Kohn's theorem, SdH experiments appear to be more reliable compared with the classical Hall effect when one studies the T dependence of the carrier density in the low T regime. On the other hand, the logarithmic T dependence of the Hall slope δRxy/δB can be used to probe e-e interactions even when the conventional conductivity method is not applicable due to strong electron-phonon scattering.

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“…at higher temperatures [13] where carbon can readily diffuse on the SiC surface. As in [14]- [16], we control the Si sublimation/ diffusion rate during annealing at very high temperature by using Ar background gas and by physical confinement, both of which lower the sublimation rate. The Si-rich decomposition products are confined in our laboratory by creating a narrow gap region through which the vapor must diffuse [17], [18].…”

Section: Epitaxial Growth Processmentioning

confidence: 99%

Graphene Epitaxial Growth on SiC(0001) for Resistance Standards

Real

Lass

Liu

et al. 2013

IEEE Trans. Instrum. Meas.

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A well-controlled technique for high-temperature epitaxial growth on 6H-SiC(0001) substrates is shown to allow the development of monolayer graphene that exhibits promise for precise metrological applications. Face-to-face and face-to-graphite annealing in a graphite-lined furnace at 1200 • C-2000 • C with a 101-kPa Ar background gas lowers the rates of SiC decomposition and Si sublimation/diffusion and thus provides a means to control the rate of graphene layer development. We studied a wide range of growth temperatures and times and describe the resulting sample surface morphology changes and graphene layer structures. The experimental results are compared to a kinetic model based on two diffusion processes: Si vapor diffusion in the Ar-filled gap and atomic diffusion through graphitic surface layers.

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Graphene Epitaxial growth on SiC(0001) for resistance standards

Cited by 8 publications

References 20 publications

Dirac fermion heating, current scaling, and direct insulator-quantum Hall transition in multilayer epitaxial graphene

Dirac fermion heating, current scaling, and direct insulator-quantum Hall transition in multilayer epitaxial graphene

Temperature dependence of electron density and electron–electron interactions in monolayer epitaxial graphene grown on SiC

Graphene Epitaxial Growth on SiC(0001) for Resistance Standards

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