Graphene-based vertical thin film transistors

Liu, Liting; Liu, Yuan; Duan, Xiangfeng

doi:10.1007/s11432-020-2806-8

Cited by 31 publications

(22 citation statements)

References 103 publications

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“…The active channel materials (MoS2, WSe2) can be pre-fabricated and transferred layer-by-layer within temperature < 200 °C, compatible with various back-endof-line (BEOL) process. Furthermore, the vertical stacking of different 2D materials can also be realized using graphene as the contact electrode [62][63][64]. For example, a complementary vertical inverter was created by vertically stacking the layered 2D MoS2 (n-type), 2D graphene (metallic) and 2D Bi2Sr2Co2O8 (p-type), as shown in Figs.…”

Section: Different 2d Channel Materialsmentioning

confidence: 99%

Recent progresses of NMOS and CMOS logic functions based on two-dimensional semiconductors

2020

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Metal-oxide-semiconductor field effect transistors (MOSFET) based on two-dimensional (2D) semiconductors have attracted extensive attention owing to their excellent transport properties, atomically thin geometry, and tunable bandgaps. Besides improving the transistor performance of individual device, lots of efforts have been devoted to achieving 2D logic functions or integrated circuit towards practical application. In this review, we discussed the recent progresses of 2D-based logic circuit. We will first start with the different methods for realization of n-type metal-oxide-semiconductor (NMOS)-only (or p-type metal-oxide-semiconductor (PMOS)-only) logic circuit. Next, various device polarity control and complementary-metal-oxide-semiconductor (CMOS) approaches are summarized, including utilizing different 2D semiconductors with intrinsic complementary doping, charge transfer doping, contact engineering, and electrostatics doping. We will discuss the merits and drawbacks of each approach, and lastly conclude with a short perspective on the challenges and future developments of 2D logic circuit.

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Section: Different 2d Channel Materialsmentioning

confidence: 99%

Recent progresses of NMOS and CMOS logic functions based on two-dimensional semiconductors

2020

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“…There is also enduring interest in the technological applications of two-dimensional (2D) materials, including graphene, for display devices [28], flexible sensors [29][30][31], photo detectors [32][33][34][35][36], vertical field-effect transistors [37,38], and atom chips [27]. New properties and methods of cooling or patterning 2D materials have been studied [39][40][41][42][43][44][45][46][47].…”

Section: Introductionmentioning

confidence: 99%

Casimir-Polder interactions of Rydberg atoms with graphene-based van der Waals heterostructures

Wongcharoenbhorn¹,

Koller²,

Fromhold³

et al. 2022

Preprint

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We investigate the thermal Casimir-Polder (CP) potential of 87 Rb atoms in Rydberg nS-states near single-and double-layer graphene. The dependence of the CP potential on parameters such as atom-surface distance, temperature, principal quantum number n and graphene Fermi energy are explored. Through large scale numerical simulations, we show that, in the non-retarded regime, the CP potential is dominated by the non-resonant and evanescent-wave terms which are monotonic, and that, in the retarded regime, the CP potential exhibits spatial oscillations. We identify that the most important contributions to the resonant component of the CP potential come from the nS-nP and nS-(n − 1)P transitions. Scaling of the CP potential as a function of the principal quantum number and temperature is obtained. A heterostructure comprising hexagonal boron nitride layers sandwiched between two graphene layers is also studied. When the boron nitride layer is sufficiently thin, the CP potential can be weakened by changing the Fermi energy of the top graphene layer.Our study provides insights for understanding and controlling CP potentials experienced by Rydberg atoms near single and multi-layer graphene-based van der Waals heterostructures.

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“…Black phosphorus (b-P) was synthesized by phase transition of white phosphorus under high pressure in 1914 [1], and it was reported that the bulk b-P was a kind of semiconductor in 1986, but its quality was too difficult to control and it hardly attracted people's interest [2]. Mechanical exfoliation and transfer technology has developed rapidly since graphene was discovered [3][4][5][6], and two-dimensional (2D) b-P has received widespread attention [7]. In 2014, several groups revealed the properties of monolayer or few-layer b-P through theoretical calculations and experiments, which shows outstanding properties, such as tunable bandgap [8], in-plane anisotropy [9] and high carrier mobility [10].…”

Section: Introductionmentioning

confidence: 99%

Properties and photodetector applications of two-dimensional black arsenic phosphorus and black phosphorus

Han

Feng

Sun

et al. 2021

Sci. China Inf. Sci.

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black arsenic phosphorus (b-AsP), as an alloy of black phosphorus (b-P) with arsenic, has attracted great attention because of its outstanding electronic and optical properties, including high carrier mobility, tunable bandgap and in-plane anisotropy. B-AsP has a smaller bandgap (0.15-0.3 eV) than the b-P bandgap (0.3-2.0 eV), and thus can be used for mid-infrared photodetectors. In addition, both of them can form various van der Waals (vdW) heterojunctions with other 2D materials to realize novel functional optoelectronic devices. Here, we compare the basic characteristics of b-AsP and b-P, including crystal structure, optical properties, band structure, electrical properties and stability, and we summarize the update progress of b-AsP in photo detection, including representatives of phototransistor and photodiode devices. In the last part, the future research directions are discussed.

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Graphene-based vertical thin film transistors

Cited by 31 publications

References 103 publications

Recent progresses of NMOS and CMOS logic functions based on two-dimensional semiconductors

Recent progresses of NMOS and CMOS logic functions based on two-dimensional semiconductors

Casimir-Polder interactions of Rydberg atoms with graphene-based van der Waals heterostructures

Properties and photodetector applications of two-dimensional black arsenic phosphorus and black phosphorus

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