2022
DOI: 10.1021/acs.nanolett.2c03805
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Graphene-Based Quantum Hall Interferometer with Self-Aligned Side Gates

Abstract: The vanishing band gap of graphene has long presented challenges for making high-quality quantum point contacts (QPCs)the partially transparent p–n interfaces introduced by conventional split gates tend to short circuit the QPCs. This complication has hindered the fabrication of graphene quantum Hall Fabry–Pérot interferometers, until recent advances have allowed split-gate QPCs to operate utilizing the highly resistive ν = 0 state. Here, we present a simple recipe to fabricate QPCs by etching a narrow trenc… Show more

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Cited by 12 publications
(6 citation statements)
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References 24 publications
(58 reference statements)
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“…(c) and (d) Reproduced from [355], with permission from Springer Nature. (e) and (f) Reprinted with permission from [362]. Copyright (2022) American Chemical Society.…”
Section: Graphene Qpcs In the Qh Regimementioning
confidence: 99%
“…(c) and (d) Reproduced from [355], with permission from Springer Nature. (e) and (f) Reprinted with permission from [362]. Copyright (2022) American Chemical Society.…”
Section: Graphene Qpcs In the Qh Regimementioning
confidence: 99%
“…Recent interference experiments, performed with FPI and MZI in a GaAs-based system, exhibited promising results 10,12,13,24 . Here, we present results of interfering integer [25][26][27][28] and fractional charges in an FPI based on van der Waals-based heterostructures (vdW).…”
Section: Introductionmentioning
confidence: 99%
“…High-quality monolayer and bilayer graphene-based quantum confinement devices use thin hexagonal-boron nitride (h-BN) sheets as gate dielectrics. The resulting confinement potential is typically sharper than that in GaAs and the nearby gates offer effective screening. Aharonov–Bohm (AB) oscillations at integer quantum Hall states have been observed recently in monolayer graphene and bilayer graphene (BLG), respectively. An electric-field-induced band gap in BLG makes it possible to adopt existing strategies in 2D semiconductors to construct mesoscopic devices.…”
mentioning
confidence: 99%