Graphene-Based Ambipolar RF Mixers

Wang, Han; Hsu, Allen; Wu, Justin Z.; Kong, Jing; Palacios, Tomás

doi:10.1109/led.2010.2052017

Cited by 244 publications

(160 citation statements)

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“…Nano-electronic devices built on 2D materials offer many benefits for further miniaturization beyond Moore's Law 2,3 and as a high-mobility option in the emerging field of large-area and low-cost electronics that is currently dominated by low-mobility amorphous silicon 4 and organic semiconductors 5,6 . MoS 2 , a 2D semiconductor material, is also attractive as a potential complement to graphene 7,8,9 for constructing digital circuits on flexible and transparent substrates, while its 1.8 eV bandgap 10,11 is advantageous over silicon for suppressing the source-to-drain tunneling at the scaling limit of transistors 12 . Molybdenum disulfide (MoS 2 ) is a layered semiconductor from the transition metal dichalcogenides material family (TMD), MX 2 (M=Mo, W; X=S, Se, Te) 10,11,19,20 .…”

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Integrated Circuits Based on Bilayer MoS₂ Transistors

et al. 2012

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Two-dimensional (2D) materials, such as molybdenum disulfide (MoS 2 ), have been shown to exhibit excellent electrical and optical properties. The semiconducting nature of MoS 2 allows it to overcome the shortcomings of zero-bandgap graphene, while still sharing many of graphene's advantages for electronic and optoelectronic applications. Discrete electronic and optoelectronic components, such as field-effect transistors, sensors and photodetectors made from few-layer MoS 2 show promising performance as potential substitute of Si in conventional electronics and of organic and amorphous Si semiconductors in ubiquitous systems and display applications. An important next step is the fabrication of fully integrated multi-stage circuits and logic building blocks on MoS 2 to demonstrate its capability for complex digital logic and high-frequency ac applications. This paper demonstrates an inverter, a NAND gate, a static random access memory, and a five-stage ring oscillator based on a direct-coupled transistor logic technology. The circuits comprise between two to twelve transistors seamlessly integrated side-byside on a single sheet of bilayer MoS 2 . Both enhancement-mode and depletion-mode transistors were fabricated thanks to the use of gate metals with different work functions. Keywords: molybdenum disulfide (MoS 2 ), transition metal dichalcogenides (TMD), Two-dimensional (2D)electronics, integrated circuits, ring oscillator.2 Two-dimensional (2D) materials, such as molybdenum disulfide (MoS 2 ) 1 and other members of the transition metal dichalcogenides family, represents the ultimate scaling of material dimension in the vertical direction. Nano-electronic devices built on 2D materials offer many benefits for further miniaturization beyond Moore's Law 2,3 and as a high-mobility option in the emerging field of large-area and low-cost electronics that is currently dominated by low-mobility amorphous silicon 4 and organic semiconductors 5,6 . MoS 2 , a 2D semiconductor material, is also attractive as a potential complement to graphene 7,8,9 for constructing digital circuits on flexible and transparent substrates, while its 1.8 eV bandgap 10,11 is advantageous over silicon for suppressing the source-to-drain tunneling at the scaling limit of transistors 12 . Molybdenum disulfide (MoS 2 ) is a layered semiconductor from the transition metal dichalcogenides material family (TMD), MX 2 (M=Mo, W; X=S, Se, Te) 10,11,19,20 . A single molecular layer of MoS 2 consists of a layer of Mo atoms sandwiched between two layers of sulfur atoms by covalent bonds 10 . The strong intra-layer covalent bonds confer MoS 2 crystals excellent mechanical strength, thermal stability up to 1090 C in inert environment 21 , and a surface free of dangling bonds. On the other hand, the weak inter-layer Van der Waal's force allows single-or fewlayer MoS 2 thin films to be created through micro-mechanical cleavage technique 22 and through anisotropic 2D 3 growth by chemical vapor deposition 23,24 . This unique property of MoS 2 , and 2D ...

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Integrated Circuits Based on Bilayer MoS₂ Transistors

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“…The performance of the mixer can be enhanced by improving the symmetry of the transfer property [94]. Afterwards, an integrated circuit including ambipolar mixer and on-wafer inductors for DC coupling, is realized based on graphene epitaxial grown on SiC, and the mixer can work at frequency as high as 10 GHz, also with temperature stability (performance reduction less than 1 dB) between 300 and 400 K, which also revealed the wafer-scale application for graphene based mixer [25].…”

Section: Rf Mixersmentioning

confidence: 99%

Graphene-based ambipolar electronics for radio frequency applications

2012

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Graphene is considered as a promising material to construct field-effect transistors (FETs) for high frequency electronic applications due to its unique structure and properties, mainly including extremely high carrier mobility and saturation velocity, the ultimate thinnest body and stability. Through continuously scaling down the gate length and optimizing the structure, the cut-off frequency of graphene FET (GFET) was rapidly increased and up to about 300 GHz, and further improvements are also expected. Because of the lack of an intrinsic band gap, the GFETs present typical ambipolar transfer characteristic without off state, which means GFETs are suitable for analog electronics rather than digital applications. Taking advantage of the ambipolar characteristic, GFET is demonstrated as an excellent building block for ambipolar electronic circuits, and has been used in applications such as highperformance frequency doublers, radio frequency mixers, digital modulators, and phase detectors. Owing to the success isolation of single layer graphene by Novoselov et al. [4] in 2004, the obsolete point was broken down and a tremendous research field has been expanded based on the 2D material [5][6][7][8][9][10][11], and even the 2010 Nobel Prize in Physics was awarded jointly to A. K. Geim and K. S. Novoselov "for groundbreaking experiments regarding the two-dimensional material graphene" [12,13]. The special 2D structure of graphene provides a series of unique properties in mechanics, thermology, optics, and electronics [10,11,[14][15][16][17][18][19]. Graphene not only provides an experimental platform for basic physics, such as relativistic quantum mechanics (or quantum electrodynamics), which is due to the *Corresponding authors (email: zyzhang@pku.edu.cn; lmpeng@pku.edu.cn) massless property of the Dirac fermion behaved electrons in graphene [20][21][22], but also manifests promising application potential in numerous application fields, such as analog radio frequency (RF) field-effect transistors (FETs) [10,[23][24][25], flexible transparent electrodes and touch screen [26], photodetection [11,27,28], and spin transport [29,30]. In this review article, we will focus on the graphene based electronics and applications, especially RF performance of graphene and ambipolar electronics.

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“…[218,219,220,221] This capability will enable device design optimization and performance projections, will permit benchmarking of graphene-based technology against existing ones, [145,222] and will help to explore the feasibility of analog/RF circuits based on graphene. [223,224,225] Ultimately, graphene-based devices could provide new or improved functionality with respect to existing technologies, such as those based on silicon or III-V materials.…”

Section: Introductionmentioning

confidence: 99%

Charge and Spin Transport in Disordered Graphene-Based Materials

Tuan

2016

Springer Theses

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Graphene-Based Ambipolar RF Mixers

Cited by 244 publications

References 16 publications

Integrated Circuits Based on Bilayer MoS₂ Transistors

Integrated Circuits Based on Bilayer MoS₂ Transistors

Graphene-based ambipolar electronics for radio frequency applications

Charge and Spin Transport in Disordered Graphene-Based Materials

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Graphene-Based Ambipolar RF Mixers

Cited by 244 publications

References 16 publications

Integrated Circuits Based on Bilayer MoS2 Transistors

Integrated Circuits Based on Bilayer MoS2 Transistors

Graphene-based ambipolar electronics for radio frequency applications

Charge and Spin Transport in Disordered Graphene-Based Materials

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Integrated Circuits Based on Bilayer MoS₂ Transistors

Integrated Circuits Based on Bilayer MoS₂ Transistors