2021
DOI: 10.1007/s40242-021-1338-5
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Graphdiyne: A Versatile Material in Electrochemical Energy Conversion and Storage

Abstract: raphdiyne(GDY), which is composed of sp 2 -/sp-hybridized carbon atoms, has attracted increasing attention. In the structure of GDY, the existence of large triangular-like pores, well dispersed electron-rich cavities as well as a large π-conjugated structure endows GDY with a natural bandgap, fast electron/ion transport, and tunable electronic properties. These unique features make GDY competitive in areas of gas separation and capture, electronics, detectors, catalysts, biomedicine and therapy, and energy-rel… Show more

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Cited by 4 publications
(6 citation statements)
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“…GDY possesses high electrical conductivity due to its perpendicular 𝜋 orbitals out of the plane, which is beneficial for charge transfer. [25,37] For example, the conductivity of GDY nanofilms, [47] monolayer GDY, [48] and GDY nanowires [49] are found to be 2.8 × 10 5 , 6.72 × 10 2 , and 1.9 × 10 3 S m −1 , respectively. Intriguingly, GDY is intrinsically a non-zero bandgap semiconductor.…”
Section: Chemical Structure and Electronic Propertiesmentioning
confidence: 99%
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“…GDY possesses high electrical conductivity due to its perpendicular 𝜋 orbitals out of the plane, which is beneficial for charge transfer. [25,37] For example, the conductivity of GDY nanofilms, [47] monolayer GDY, [48] and GDY nanowires [49] are found to be 2.8 × 10 5 , 6.72 × 10 2 , and 1.9 × 10 3 S m −1 , respectively. Intriguingly, GDY is intrinsically a non-zero bandgap semiconductor.…”
Section: Chemical Structure and Electronic Propertiesmentioning
confidence: 99%
“…Despite that there are quite a few GDYs‐focused reviews on synthesis, [ 28 ] characterization, [ 29,30 ] intrinsic properties, [ 31–34 ] and applications, [ 25,35–37 ] there lacks one grounding on GDYs‐involved semiconductor devices (both electron and ion based) to deeply explore the potential GDYs could have in the field of optoelectronics. In this paper, the unique structures, physicochemical properties, and electronic structures of GDYs are briefly described, and research progresses on their applications in devices, including memories, solar cells, photodetectors, and field‐effect transistors (FETs), are summarized.…”
Section: Introductionmentioning
confidence: 99%
“…Thus, N-doped GDY and its derivatives with outstanding advantages have been extensively studied in the energy conversion and storage, biological application, and environmental protection. [57][58][59] Given the influence of structures on the properties of GDY, a great deal of works including post-heating method and top-down method have been devoted into the fabrication of N-doped GDY and its derivatives. The post-heating method refers to the synthetic process of Ndoped GDY by heating GDY under N sources, such as high-purity ammonia.…”
Section: Metal-free Based Gdymentioning
confidence: 99%
“…As the N atom has a suitable atomic size but higher electronegativity than that of the C atom, N atoms can be doped into the structure of GDY for the effective regulation of their basic properties. Thus, N‐doped GDY and its derivatives with outstanding advantages have been extensively studied in the energy conversion and storage, biological application, and environmental protection 57–59 . Given the influence of structures on the properties of GDY, a great deal of works including post‐heating method and top‐down method have been devoted into the fabrication of N‐doped GDY and its derivatives.…”
Section: Design and Synthesis Of Gdymentioning
confidence: 99%
“…However, theoretical computation can break through the limitations of experiments, which not only reveal the intrinsic properties of GDY materials, such as mechanical, 19 magnetic, 20 optical, 21 and electronic 22 properties, but also explain the mechanisms of their applications in energy storage 23 and conversion. 24 For example, a band gap (0.46 eV) and the charge mobility (10 4 −10 5 cm 2 •V −1 •s −1 ) of the GDY sheet can be obtained through simulation. 25 Further, the interesting properties of some GDY (hydrogenated networks), that the band gap increases with increasing strain in a certain range, was found.…”
Section: Introductionmentioning
confidence: 99%