1997
DOI: 10.1016/s0040-6090(96)09152-3
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Grain size effects on H2 gas sensitivity of thick film resistor using SnO2 nanoparticles

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Cited by 286 publications
(132 citation statements)
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“…It is in fact well recognized that by reducing the particle size of the sensing material in the nanometer range the sensitivity of chemoresistive gas sensors is greatly improved both for the large specific surface offered and for the influence in reducing the surface charge density [21,[28][29][30][31][32][33][34][35]. Furthermore, in this size range, a large fraction of the atoms (up to 50%) are present at the surface or the interface region; therefore, the chemical and electronic of nanoparticles are different from those of the bulk, consequently contributing to an increase in the sensing properties.…”
Section: Sensing Materialsmentioning
confidence: 99%
“…It is in fact well recognized that by reducing the particle size of the sensing material in the nanometer range the sensitivity of chemoresistive gas sensors is greatly improved both for the large specific surface offered and for the influence in reducing the surface charge density [21,[28][29][30][31][32][33][34][35]. Furthermore, in this size range, a large fraction of the atoms (up to 50%) are present at the surface or the interface region; therefore, the chemical and electronic of nanoparticles are different from those of the bulk, consequently contributing to an increase in the sensing properties.…”
Section: Sensing Materialsmentioning
confidence: 99%
“…Tin oxide (SnO 2 ), a ntype semiconductor with a wide band gap (3.6 eV, at 300 K), is well known for its potential applications in gas sensors, dye sensitized solar cells, and transparent conducting electrodes and as a catalyst support [3,4]. Therefore, many processes have been proposed to synthesize SnO 2 nanostructures; some involve dry processes such as sputtering from tin oxide target [5] or from metallic target followed by oxidation [6] and chemical vapour deposition (CVD) [7], while others are based on wet processes, including spray pyrolysis [8] and sol-gel-related methods which have been used to prepare tin oxide coating, particles, and precipitates [9][10][11][12][13][14][15].…”
Section: Introductionmentioning
confidence: 99%
“…Tin oxide is a wide band gap n-type semiconductor and is one of the commonly used material for gas sensors, transparent conducting electrodes and optoelectronic devices operating at room temperature [1]. In recent years thin lms of SnO 2 have become an integral part of modern electronic technology.…”
Section: Introductionmentioning
confidence: 99%