Grain Size and Phase Transformation Behavior of TiNi Shape-Memory-Alloy Thin Film under Different Deposition Conditions

Bae, Jong Hyang; Lee, Deokjung; Seo, Duck-Hyeon; Yun, Sang-Du; Yang, Jeonghyeon; Huh, Sun-Chul; Jeong, Hyomin; Noh, Jungpil

doi:10.3390/ma13143229

Cited by 6 publications

(1 citation statement)

References 29 publications

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“…The grain sizes of the 200 nm, 300 nm, and 400 nm molybdenum carbide films are 9.1 nm, 11.4 nm, and 14.9 nm, respectively. Bae et al [14]have reported the similar result for TiNi shape-memory-alloy thin films deposited by magnetron sputtering, the grain size increased as film thickness increased and corresponded to the crystallinity. Takagi et al [15] reported that high-energy Ar + ions can produce a thermal effect by bombarding the substrate during the deposition process.…”

Section: Resultsmentioning

confidence: 54%

Effects of film thickness and annealing temperature on the properties of molybdenum carbide films prepared using pulsed direct-current magnetron sputtering

Zhao

Zhu

et al. 2022

Mater. Res. Express

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Molybdenum carbide (Mo2C) films were prepared using pulsed direct-current (DC) magnetron sputtering. The effects of film thickness on the phase structure, surface morphology, and optical constants of the films were examined using X-ray diffraction (XRD), atomic force microscopy, and extreme ultraviolet reflectivity. XRD analysis showed that the as-sputtered films with thicknesses between 30 nm and 150 nm were almost amorphous. New phase α-MoC1-x with the (111), (200), (220), (311), and (222) crystal planes appeared in films with thicknesses between 200 nm and 400 nm. The phase transition and chemical composition of the Mo2C films treated using vacuum heat treatment were analyzed in detail. For 150 nm-thick films, the as-deposited as well as the 600 °C-annealed films were amorphous. The phase structures of the 150 nm-thick film annealed at 700 °C, 750 °C, and 800 °C were orthogonal Mo2C (α–Mo2C), multiphase structure (β–Mo2C, monoclinic MoO2, and cubic Mo2N), and monoclinic MoO2, respectively. X-ray photoelectron spectrometry revealed that the Mo-Mo bonds of the films transformed into Mo-C, Mo-O, and Mo-N bonds under 750 ℃-annealing, further confirming the formation of a multiphase structure after annealing. Thus, film thickness and annealing temperature considerably influence the properties of Mo2C films.

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Section: Resultsmentioning

confidence: 54%

Effects of film thickness and annealing temperature on the properties of molybdenum carbide films prepared using pulsed direct-current magnetron sputtering

Zhao

Zhu

et al. 2022

Mater. Res. Express

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Influence of substrates and e-beam evaporation parameters on the microstructure of nanocrystalline and epitaxially grown Ti thin films

Devulapalli

Bishara

Ghidelli

et al. 2021

Applied Surface Science

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Titanium thin films were deposited on silicon nitride (SiN x ) coated Si, NaCl, and sapphire substrates varying the deposition conditions using e-beam evaporation to investigate thin film growth modes. The microstructure and texture evolution in dependence of substrate, deposition rate, film thickness, and substrate temperature were studied using X-ray diffraction, electron backscatter diffraction, and transmission electron microscopy. Thin films obtained on SiN x and NaCl substrates were nanocrystalline, while the films deposited on sapphire transformed from nanocrystalline to single crystalline at deposition temperatures above 200 • C. Predominantly, a surface plane orientation of ( 0002) was observed for the single crystalline films due to the minimization of surface energy. The orientation relationship of epitaxial single crystalline films grown on C-plane sapphire substrate is found to be (0002)T i (0006) S apphire , 1120 T i 0330 S apphire . In this orientation relationship, both the total surface and strain energy of the film are minimized. The results were complemented by resistivity measurements using the four-point probe method reporting an increase from ∼60 µ Ω cm to ∼95 µ Ω cm for single crystalline and nanocrystalline films, respectively. 32Apart from the deposition parameters, the lattice matching, 33 symmetry of surface planes, substrate miscut, and the planes 34 forming terraces and steps on the substrate surface [15] are vari-35 ables that can alter the orientation and morphology of thin films, 36 while maintaining substrate chemistry. The adaption of an ori-37 entation relationship (OR) between a substrate and a film is a 38 complex phenomenon [16]. Even with a known substrate sur-39 face symmetry and chemical composition, it is in most cases not 40 possible to predict the preferred OR [17]. Although the (0002) 41 plane of Ti has the lowest surface energy, making it the domi-42 nant surface plane, Ti films have been reported to grow with at 43 least six other surface plane orientations [18].

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Microstructures and mechanical properties of NiTi shape memory alloys fabricated by wire arc additive manufacturing

Chen

Zhang

et al. 2022

Journal of Alloys and Compounds

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Grain Size and Phase Transformation Behavior of TiNi Shape-Memory-Alloy Thin Film under Different Deposition Conditions

Cited by 6 publications

References 29 publications

Effects of film thickness and annealing temperature on the properties of molybdenum carbide films prepared using pulsed direct-current magnetron sputtering

Effects of film thickness and annealing temperature on the properties of molybdenum carbide films prepared using pulsed direct-current magnetron sputtering

Influence of substrates and e-beam evaporation parameters on the microstructure of nanocrystalline and epitaxially grown Ti thin films

Microstructures and mechanical properties of NiTi shape memory alloys fabricated by wire arc additive manufacturing

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