Grain boundary scattering in the normal state resistivity of superconducting NbN thin films

Tyan, Jyh-Haur; Lue, Juh Tzeng

doi:10.1063/1.355853

Cited by 35 publications

(22 citation statements)

References 24 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…We find that the resistivity ratio, which is smaller than 1, decreases almost linearly from 0.98 to 0.89 as N 2 flow rate is increased from 1.4 sccm to 2.9 sccm. This kind of temperature dependence is commonly observed in polycrystalline NbN films [1][2][3][4][5][6][7][8][9] and often interpreted as grain-boundary scattering effect [3,4]. T c and normal state resistivity for all the NbN thin films studied in this work are summarized in Fig.…”

Section: Resultssupporting

confidence: 52%

See 1 more Smart Citation

Transition temperatures and upper critical fields of NbN thin films fabricated at room temperature

Hwang¹,

Kim²

2015

Progress in Superconductivity and Cryogenics

View full text Add to dashboard Cite

NbN thin films were deposited on thermally oxidized Si substrate at room temperature by using reactive magnetron sputtering in an Ar-N 2 gas mixture. Total sputtering gas pressure was fixed while varying N 2 flow rate from 1.4 sccm to 2.9 sccm. X-ray diffraction pattern analysis revealed dominant NbN(200) orientation in the low N 2 flow rate but emerging of (111) orientation with diminishing (200) orientation at higher flow rate. The dependences of the superconducting properties on the N 2 gas flow rate were investigated. All the NbN thin films showed a small negative temperature coefficient of resistance with resistivity ratio between 300 K and 20 K in the range from 0.98 to 0.89 as the N 2 flow rate is increased. Transition temperature showed non-monotonic dependence on N 2 flow rate reaching as high as 11.12 K determined by the mid-point temperature of the transition with transition width of 0.3 K. On the other hand, the upper critical field showed roughly linear increase with N 2 flow rate up to 2.7 sccm. The highest upper critical field extrapolated to 0 K was 17.4 T with corresponding coherence length of 4.3 nm. Our results are discussed with the granular nature of NbN thin films.

show abstract

Section: Resultssupporting

confidence: 52%

“…Higher transition temperature (T c ) of 17 K has been one of the advantages to use NbN in place of Nb. Most NbN films have been deposited by reactive magnetron sputtering in an Ar-N 2 mixture [1][2][3][4] but sometimes pulsed laser deposition [5] or atomic layer deposition method [6] was also used.…”

Section: Introductionmentioning

confidence: 99%

Transition temperatures and upper critical fields of NbN thin films fabricated at room temperature

Hwang¹,

Kim²

2015

Progress in Superconductivity and Cryogenics

View full text Add to dashboard Cite

show abstract

“…4,[14][15][16] According to the grain boundary scattering model, the dc electrical resistivity is given by ͑valid in the limit L / D Ͼ 1͒ This anomalous normal resistivity was often explained in terms of grain-boundary scattering effects.…”

Section: Grain-boundary Modelmentioning

confidence: 99%

Relationship between the physical and structural properties of NbzSiyNx thin films deposited by dc reactive magnetron sputtering

Sanjinés

Benkahoul

Sandu

et al. 2005

Journal of Applied Physics

View full text Add to dashboard Cite

Well-isolated L10 FePt-SiN x -C nanocomposite films with large coercivity and small grain size Ionized magnetron sputter deposition of hard nanocomposite TiN/amorphous-silicon nitride filmsThe optical and electrical properties of Nb z Si y N x thin films deposited by dc reactive magnetron sputtering have been investigated as a function of the Si content ͑C Si ͒. Optical properties were studied by both specular reflectivity and spectroscopic ellipsometry. Electrical resistivity was measured by the van der Pauw method at room temperature and as a function of the temperature down to 10 K. Both the optical and electrical properties of Nb z Si y N x films are closely related with the chemical composition and microstructure evolution caused by Si addition. For C Si up to 4 at. % the Si atoms are soluble in the lattice of the NbN crystallites. In this compositional regime, the optical and electrical properties show little dependence on the Si content. Between 4 and 7 at. % the surplus of Si atoms segregates at the grain boundaries, builds an insulating SiN x layer, and originates important modifications in the optical and electrical properties of these films. Further increase of C Si leads to the formation of nanocomposite structures. The electrical properties of these films are well described by the grain-boundary scattering model with low probability for electrons to cross the grain boundary. The appearance of the intragranular-insulating SiN x layer and the reduction of the grain size are noticed in the dielectric function mainly as a strong damping of the plasma oscillation.

show abstract

“…To seek more insights, we extensively explored relevant literatures, and two well-established evidences have been brought to our attention 1) The fabrication process of NbN thin films involves sputtering a pure niobium target in a mixed gas flow of nitrogen and argon [21]. The film properties have microscopically been studied in [22] and [23] to systematically show the weaklink properties of NbN thin films. The electrical properties of NbN thin films have been studied in [24] and [25].…”

Section: Appendix Theoretical Discussion On Nonlinear Kinetic Inductmentioning

confidence: 99%

Experimental Investigations on Nonlinear Properties of Superconducting Nanowire Meanderline in RF and Microwave Frequencies

Yan

Majedi

2009

IEEE Trans. Appl. Supercond.

View full text Add to dashboard Cite

We report our experimental investigations on the radio frequency (RF) and microwave nonlinear behavior of the NbN nanowire meanderline. We construct a lumped element model of the NbN nanowire meanderline, which consists of a kinetic inductance, a normal resistance, and a parasitic capacitance that is a load of a transmission line. Two complementary measurements, which are based on the one-port scattering (S)-parameter technique, are used to explore the nonlinearity in the kinetic inductance and the normal resistance of the NbN nanowire meanderline under dc current and voltage bias conditions. In the first series of experiments, the kinetic inductance has directly been measured from zero up to 99% of the critical current and to the voltage bias, where the hotspot plateau occurs. The Ginsburg-Landau (G-L) theory has been employed to justify the results. The technical procedures required to achieve our desired level of accuracy have been described in detail. In the second series of experiments, the quality factor of the NbN nanowire meanderline has been measured, providing an alternative justification to the first experimental results.

show abstract

Grain boundary scattering in the normal state resistivity of superconducting NbN thin films

Cited by 35 publications

References 24 publications

Transition temperatures and upper critical fields of NbN thin films fabricated at room temperature

Transition temperatures and upper critical fields of NbN thin films fabricated at room temperature

Relationship between the physical and structural properties of NbzSiyNx thin films deposited by dc reactive magnetron sputtering

Experimental Investigations on Nonlinear Properties of Superconducting Nanowire Meanderline in RF and Microwave Frequencies

Contact Info

Product

Resources

About