2021
DOI: 10.1002/solr.202000681
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Grain Boundary Passivation with Dion–Jacobson Phase Perovskites for High‐Performance Pb–Sn Mixed Narrow‐Bandgap Perovskite Solar Cells

Abstract: The mixed Pb–Sn perovskites have the ideal bandgap of ≈1.2 eV for photovoltaic application. However, the undesirable p‐doping introduced by Sn2+ oxidation restrains the device's power conversion efficiency (PCE) and stability. Herein, an additive strategy with p‐phenyl dimethylammonium iodide (PhDMADI) is proposed, which has a bulky divalent organic cation and facilitates the formation of Dion–Jacobson phase‐based quasi‐2D perovskites at the grain boundaries. It is found that this unique 2D/3D bulk heterojunct… Show more

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Cited by 23 publications
(25 citation statements)
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References 55 publications
(74 reference statements)
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“…[20,28,29] Heterogeneous nucleation and rapid crystallization lead to high trap density of mixed SnPb perovskite films and inhomogeneity of the film quality when grown on substrate, greatly reducing the carrier mobility. [11] On the other hand, the introduction of Sn makes the mixed SnPb perovskites intrinsically p-doped due to the Sn vacancies mainly resulting from the readily oxidation of Sn 2+ to Sn 4+ , [10,15,20,30,31] leading to high hole carrier concentration, low carrier mobility, and increased non-radiative recombination loss, thus making the performance of low-E g PSCs unstable and underestimated.…”
Section: Introductionmentioning
confidence: 99%
“…[20,28,29] Heterogeneous nucleation and rapid crystallization lead to high trap density of mixed SnPb perovskite films and inhomogeneity of the film quality when grown on substrate, greatly reducing the carrier mobility. [11] On the other hand, the introduction of Sn makes the mixed SnPb perovskites intrinsically p-doped due to the Sn vacancies mainly resulting from the readily oxidation of Sn 2+ to Sn 4+ , [10,15,20,30,31] leading to high hole carrier concentration, low carrier mobility, and increased non-radiative recombination loss, thus making the performance of low-E g PSCs unstable and underestimated.…”
Section: Introductionmentioning
confidence: 99%
“…With the previous settings, we select a series of ratios from 0.5 to 1.0 for experimental validation under the set fabrication processing. As reported in previous works, the perovskite crystallization processes 53 , grain boundary management 54 , interface engineering 55 and charge transport layer selection 56 were proved to be critical aspects toward high-efficiency perovskite solar cells. Every precise tuning of above sections in each experimental condition is definitely difficult and time consuming.…”
Section: Resultsmentioning
confidence: 71%
“…[36,37] This is followed by the formation of Sn vacancies and introduction of additional p-type charge (Equation (1)). [38,39] Several efforts have been made to address this issue, such as Sn compensators strategy, [40,41] redox strategy, [42] core-shell [43] structure, and interface engineering; [44][45][46][47] II) overfast and uncontrolled crystalize process. The uncontrollable crystalize process [7,48,49] has been attributed to stronger reaction between Sn and organic component than that of Pb, [50] leading to inferior film quality and increasing defect density as well.…”
Section: Introductionmentioning
confidence: 99%