Gradually Modified Conductance in the Self-Compliance Region of an Atomic-Layer-Deposited Pt/TiO2/HfAlOx/TiN RRAM Device

Abstract

This study presents conductance modulation in a Pt/TiO2/HfAlOx/TiN resistive memory device in the compliance region for neuromorphic system applications. First, the chemical and material characteristics of the atomic-layer-deposited films were verified by X-ray photoelectron spectroscopy depth profiling. The low-resistance state was effectively controlled by the compliance current, and the high-resistance state was adjusted by the reset stop voltage. Stable endurance and retention in bipolar resistive switching were achieved. When a compliance current of 1 mA was imposed, only gradual switching was observed in the reset process. Self-compliance was used after an abrupt set transition to achieve a gradual set process. Finally, 10 cycles of long-term potentiation and depression were obtained in the compliance current region for neuromorphic system applications.

Multi-level Cells and Quantized Conductance Characteristics of Al2O3-Based RRAM Device for Neuromorphic System

“…3 a, it can be implemented by adjusting reset voltage less than 2.75 V. This is referred to as a partial reset curve, and the on/off ratio at this time is about 13 at the read voltage of 0.5 V. Compared to the I – V curves with fully reset, the I – V curves with partial reset process shows more gradual characteristics in the set and reset processes. Both I – V characteristics have self-compliance characteristics [ 44 ]. The method of connecting the two differences in Fig.…”

Machine Learning Methods and Sustainable Development: Metal Oxides and Multilayer Metal Oxides

“…Ryu and Kim [4] present conductance modulation in a Pt/TiO 2 /HfAlO x /TiN resistive memory device in the compliance region for neuromorphic system applications. First, the chemical and material characteristics of the atomic-layer-deposited films were verified by X-ray photoelectron spectroscopy depth profiling.…”

Effects of Oxygen Precursor on Resistive Switching Properties of CMOS Compatible HfO2-Based RRAM

“…Magnetoresistive randomaccess memory (MRAM) also shows resistance change by controlling the magnetization of magnetic material [6]. RRAM has the advantage of being capable of tunable resistive switching, which is applicable to the various application as storage memory [7][8][9][10][11][12][13][14][15][16][17][18][19][20], logicin-memory [21], and neuromorphic computing [22][23][24][25][26][27][28][29][30][31][32][33][34][35][36][37][38][39][40]. Moreover, RRAM shows lowpower operation, high endurance, good retention, high-density integration, and good complementary metal-oxide-semiconductor (CMOS) compatibility in terms of process and material.…”