Effects of Oxygen Precursor on Resistive Switching Properties of CMOS Compatible HfO2-Based RRAM

Ryu, Hojeong; Kim, Sungjun

doi:10.3390/met11091350

Cited by 8 publications

(3 citation statements)

References 62 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…UVO may have an impact on the surface roughness of the underlying layer [24] which can be detrimental to nanoscale thin-film devices. Therefore, we measured the surface roughness of the P3HT:PCBM organic layer before and after the UVO treatment using AFM.…”

Section: Resultsmentioning

confidence: 99%

Enhancement of resistive switching behavior of organic resistive random access memory devices through UV-Ozone treatment

Park

Khan

Rahmani

et al. 2022

Mater. Res. Express

View full text Add to dashboard Cite

We fabricated organic resistive random-access memory (RRAM) devices using a low-cost solution-process method. All the processes were performed at temperatures below 135 °C under ambient atmospheric conditions. The RRAM resistive switching layer was formed from a polymer-fullerene bulk heterojunction using poly(3-hexylthiophene-2,5-diyl) (P3HT) and (6,6)-phenyl C61 butyric acid methyl ester (PCBM). The fabricated organic RRAM device exhibited typical nonvolatile bipolar resistive switching behavior with an ON/OFF ratio of ~40, but it provided a low endurance of 27 cycles. Therefore, for enhanced stability, simple UV-ozone (UVO) treatment was applied to the P3HT:PCBM organic bulk heterojunction layer. The organic RRAM device with UVO treatment exhibited an enhanced performance with an ON/OFF ratio of ~400 and an endurance of 47 cycles. In addition, complementary resistive switching behavior was observed. The conduction mechanisms of the organic RRAM device were investigated by fitting the measured I–V data to numerical equations, and Schottky emission and Ohmic conduction were the main conduction mechanisms for the high-resistance and low-resistance states for the RRAM device with or without UVO treatment.

show abstract

Section: Resultsmentioning

confidence: 99%

Enhancement of resistive switching behavior of organic resistive random access memory devices through UV-Ozone treatment

Park

Khan

Rahmani

et al. 2022

Mater. Res. Express

View full text Add to dashboard Cite

show abstract

“…For example, HfO 2 -based thin films are used in accessories for high-power lasers, in cameras for space applications, as well as in antireflective coatings [3,4]. On the other hand, the high dielectric constant (k~25) and the wide energy gap (Eg~5.7 eV) [5,6] often result in the application of HfO 2 as a dielectric material that replaces SiO 2 , for example, in transparent thin-film transistors as a gate material [7] or is used as an insulator in resistive free-access memory [8].…”

Section: Introductionmentioning

confidence: 99%

Characterization of Structural, Optical, Corrosion, and Mechanical Properties of HfO2 Thin Films Deposited Using Pulsed DC Magnetron Sputtering

et al. 2023

View full text Add to dashboard Cite

Various properties of HfO2, such as hardness, corrosion, or electrical resistance, depend on the method and the conditions of deposition. In this work, a thorough comparison of scarcely investigated mechanical properties of HfO2 thin films deposited with different conditions of reactive magnetron sputtering process is presented. Four thin films were sputtered in processes that varied in plasma ignition method (continuous or sequential) and target–substrate distance. The structural characteristics of the HfO2 thin films were examined using Raman spectroscopy and X-ray diffraction measurements. Furthermore, the optoelectronic properties were determined based on transmittance and current–voltage characteristics. The mechanical properties of the HfO2 thin films were determined using nanoindentation and scratch test. In turn, the corrosion properties were determined by analyzing the voltametric curves. The transparent HfO2 thin films deposited in the continuous process are characterized by better corrosion resistance than the same layer formed in the sequential process, regardless of the target–substrate distance (8 cm or 12 cm). Furthermore, these samples are also characterized by the highest value of Young’s modulus and scratch resistance. The combination of good corrosion and scratch resistance could contribute to the new application of HfO2 as a corrosion protective material.

show abstract

“…It operates on a mechanism where conductive filaments, based on oxygen vacancies, are created and destroyed, thus resulting in the switching between the low-resistance states (LRS) and high-resistance states (HRS), respectively denoted as "On" and "Off" [13,14]. The resistance switching phenomenon in RRAM devices has been extensively explored using various binary metal oxides, such as ZrO x , TaO x , AlO x , TiO x , and HfO x [15][16][17][18][19]. Among these, ZrO x , which has been used as the insulator layer, has gained attention as a high-K material compatible with traditional CMOS processes [20].…”

Section: Introductionmentioning

confidence: 99%

Improved Resistive and Synaptic Characteristics in Neuromorphic Systems Achieved Using the Double-Forming Process

Kim,

Ju,

Kang

et al. 2023

Nanomaterials

Self Cite

View full text Add to dashboard Cite

In this study, we investigate the electrical properties of ITO/ZrOx/TaN RRAM devices for neuromorphic computing applications. The thickness and material composition of the device are analyzed using transmission electron microscopy. Additionally, the existence of TaON interface layers was confirmed using dispersive X-ray spectroscopy and X-ray photoelectron analysis. The forming process of the ZrOx-based device can be divided into two categories, namely single- and double forming, based on the initial lattice oxygen vacancies. The resistive switching behaviors of the two forming methods are compared in terms of the uniformity properties of endurance and retention. The rationale behind each I–V forming process was determined as follows: in the double-forming method case, an energy band diagram was constructed using F-N tunneling; conversely, in the single-forming method case, the ratio of oxygen vacancies was extracted based on XPS analysis to identify the conditions for filament formation. Subsequently, synaptic simulations for the applications of neuromorphic systems were conducted using a pulse scheme to achieve potentiation and depression with a deep neural network-based pattern recognition system to display the achieved recognition accuracy. Finally, high-order synaptic plasticity (spike-timing-dependent plasticity (STDP)) is emulated based on the Hebbian rule.

show abstract

Effects of Oxygen Precursor on Resistive Switching Properties of CMOS Compatible HfO2-Based RRAM

Cited by 8 publications

References 62 publications

Enhancement of resistive switching behavior of organic resistive random access memory devices through UV-Ozone treatment

Enhancement of resistive switching behavior of organic resistive random access memory devices through UV-Ozone treatment

Characterization of Structural, Optical, Corrosion, and Mechanical Properties of HfO2 Thin Films Deposited Using Pulsed DC Magnetron Sputtering

Improved Resistive and Synaptic Characteristics in Neuromorphic Systems Achieved Using the Double-Forming Process

Contact Info

Product

Resources

About