Gradual degradation in 980 nm InGaAs/AlGaAs pump lasers

Bettiati, M.; Starck, C.; Pommiès, Matthieu; Broqua, N.; Gelly, G.; Avella, M.; Jiménez, J.; Asaad, I.; Orsal, B.; Peransin, J.M.

doi:10.1016/s0921-5107(01)01012-1

Cited by 8 publications

(3 citation statements)

References 14 publications

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“…After prolonged use, LLLT devices are prone to degradation of the laser radiation structure, which decreases the power of radiation emitted by the devices 16 . Therefore, annual calibration should be conducted in accordance with the specifications found in the manuals provided by manufacturers in order to achieve a truly functional application of this therapeutic method.…”

Section: Discussionmentioning

confidence: 99%

Aferição dos equipamentos de laser de baixa intensidade

Fukuda

Jesus

Santos

et al. 2010

Rev. bras. fisioter.

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Section: Discussionmentioning

confidence: 99%

Aferição dos equipamentos de laser de baixa intensidade

Fukuda

Jesus

Santos

et al. 2010

Rev. bras. fisioter.

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“…The laser has a cavity length of 1200 μm and is coated, for the 50 • C aging tests, with standard low-( ∼ =1%) and high-reflectivity ( ∼ =90%) coatings on the facets. A different coating reflectivity and aging configuration has also been studied in a previous work [1][2][3].…”

Section: Device Descriptionmentioning

confidence: 99%

SCLC Degradation in 980 nm Pump Laser by Using Electrical Noise

Orsal¹,

Asaad

2012

ISRN Optics

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The knowledge of the noise levels is important for pump laser diodes as it allows to study and to locate the noise sources and their origin. 980 nm fresh and aged pump lasers have been characterized by using electrical noise measurements. At 10 Hz, the spectra are dominated by () noise. Current noise spectral density (CNSD) is dominated by (). The trapping defect density near the n+n- and p+p- interfaces is related to pinching of the space-charge-limited current (SCLC) effect. An excess electrical noise due to longitudinal mode hopping is correlated with optical power fluctuations.

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“…This feedback mechanism leads to migration and condensation of point defects, forming precipitates or small dislocation loops affecting quantum efficiency and reducing the lifetime of such a device [14]. The impact of the preparation quality of active buried optical waveguides (ridge) or passive waveguide (tapers) and the steps of epitaxy overgrowth after RIE etching of the active zone can also locally generate zones of strong stresses and migrations of dislocations towards the active zone under temperature increase [15]. So nanophotonics based on waveguides using heterostructures (InGaAsP/InP, .…”

Section: Specific Challenges Of Nanotechnologiesmentioning

confidence: 99%