Graded-base Si/Si/sub 1-x/Ge/sub x//Si heterojunction bipolar transistors grown by rapid thermal chemical vapor deposition with near-ideal electrical characteristics

Sturm, James C.; Prinz, E.J.; Magee, C. W.

doi:10.1109/55.82068

Cited by 56 publications

(8 citation statements)

References 10 publications

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“…In principle, EG(GeSi) can be determined directly from measurements on a single transistor provided we account for the temperature dependence of all parameters. The energy gap of silicon and germanium-silicon [4] has the temperature dependence EG(GeSi) (T) = EG(GeSi)(0) -4.774 x 104T2/(T + 636 K) (2) and to a good approximation the mobility is temperature-independent leading to NcNvDn a T 4 . We expect then…”

Section: Resultsmentioning

confidence: 99%

“…80 layer in order to complete growth of the silicon emitter. They reported that similar layers were strained according to Xray diffraction and TEM studies [2].…”

Section: Resultsmentioning

confidence: 99%

“…Base current ideality factors close to one have been reported for devices fabricated by UHV/ CVD [1], limited reaction processing [2], and molecular beam epitaxy [3]. However, many other researchers have reported transistors with chararacteristics strongly influenced by defects of various types.…”

Section: Introductionmentioning

confidence: 92%

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Comparison of Mesa- Etched and Ion- Implanted Ge_xSi_1-x Heterojunction Bipolar Transistors

Greve

Racanelli

1992

MRS Proc.

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We report a comparison of the characteristics of germanium-silicon base heterojunction bipolar transistors fabricated using mesa-etched and ion-implanted processes. The base currents of both device structures are dominated by peripheral currents associated with the plasma-SiO2 covered junction edge. After an implant damage anneal at 800 or 900 C, the ion-implanted process exhibited the lowest base currents. There was no evidence of strained layer relaxation even for the 900 C anneal.

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Section: Resultsmentioning

confidence: 99%

“…80 layer in order to complete growth of the silicon emitter. They reported that similar layers were strained according to Xray diffraction and TEM studies [2].…”

Section: Resultsmentioning

confidence: 99%

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Comparison of Mesa- Etched and Ion- Implanted Ge_xSi_1-x Heterojunction Bipolar Transistors

Greve

Racanelli

1992

MRS Proc.

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“…However, to our knowledge, there have been no reports of the surface electronic states of clean and H-terminated Si x Ge 1Ϫx surfaces despite the fact that Si x Ge 1Ϫx alloys have significant application potential for electronic devices. [13][14][15][16][17][18][19] Silicon and germanium both form in the diamond crystal structure. The materials are completely miscible over the entire compositional range and give rise to alloys also with the diamond crystal structure.…”

Section: Introductionmentioning

confidence: 99%

Surface electronic structure of clean and hydrogen-chemisorbedSixGe1
Ku
¹
,
Nemanich
²

1996
Phys. Rev. B
4
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The surface electronic states of clean and hydrogen-terminated Si x Ge 1Ϫx surfaces were studied with angleresolved ultraviolet photoelectron spectroscopy ͑ARUPS͒. A series of strained and relaxed Si x Ge 1Ϫx alloys were grown on Si͑100͒ wafers using electron-beam evaporation in an ultrahigh-vacuum molecular-beamepitaxy chamber. The growth was followed by in situ hydrogen-plasma exposure to obtain H-terminated surfaces. After alloy film growth, a double domain 2ϫ1 reconstruction was observed for the series of clean Si x Ge 1Ϫx alloys. A diffuse double domain 2ϫ1 reconstructed surface was obtained after the H-plasma exposure, which implies that the Si͑Ge͒-H monohydride domains are smaller than the surface terraces. The diffuse peaks were attributed to disorder and incoherence in the H termination rather than a change of the terrace structure. He I ͑21.21 eV͒ and Ne I ͑16.85 eV͒ resonance lines were employed to identify the surface states or resonances and bulk states of all samples described in this paper. ARUPS spectra of the series of clean and H-terminated Si x Ge 1Ϫx alloys were obtained as a function of emission angle along the ͓010͔ direction. From measurements of the series of clean Si x Ge 1Ϫx alloy surfaces the surface states or resonances due to the dangling bond and the back bond were identified and found to disperse downward from ⌫ to J ab Ј . A nondispersive hydrogen-induced surface state or resonance was observed from the series of H-terminated Si x Ge 1Ϫx alloy surfaces. The electron affinities of the series of clean and H-terminated Si x Ge 1Ϫx alloy surfaces were also measured using ARUPS. The electron affinity of the Si͑100͒ surface was found to be 3.83 eV and those of strained and relaxed Si x Ge 1Ϫx ͑100͒ surfaces ranged from 3.87 to 4.05 eV. The electron affinity of clean and H-terminated surfaces exhibited the same values.

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“…INTRODUCTION a-SixGel-x:H alloys have recently attracted considerable attention as promising new materials for photovoltaic and optoelectronic devices [1,2]. Alloys with -40 at.% Ge have a bandgap of -1.4 eV which has made them useful as an active layer material in photovoltaic (PV) tandem cells.…”

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confidence: 99%

Electric and Optical Properties of μc-Si,Ge:H Alloys Deposited by Reactive Magnetron Sputtering (RMS)

et al. 1995

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Amorphous and microcrystalline silicon-germanium alloys, a-SixGel.x:H and gtc-SixGel.x:H, respectively, have been prepared by reactive magnetron sputtering (RMS) from pure crystalline Si and Ge targets in a hydrogen ambient using argon as the sputtering gas. We have investigated the structural, optical, and electronic properties of the as-deposited films. The optical and electrical properties, e.g., the ambipolar diffusion length, photoconductivity, and photosensitivity, were found to be comparable to those of device-grade a-SixGeI.x:H alloys, e.g., films with x-0.5, and band-gaps -1.3-1.4 eV. In contrast to the behavior of the a-SixGel-x:H alloys, the pjc-SixGei1x:H alloys do not display a Staebler-Wronski effect, as manifested by a decay of the photoconductivity under intense illumination.

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Graded-base Si/Si/sub 1-x/Ge/sub x//Si heterojunction bipolar transistors grown by rapid thermal chemical vapor deposition with near-ideal electrical characteristics

Cited by 56 publications

References 10 publications

Comparison of Mesa- Etched and Ion- Implanted Ge_xSi_1-x Heterojunction Bipolar Transistors

Comparison of Mesa- Etched and Ion- Implanted Ge_xSi_1-x Heterojunction Bipolar Transistors

Surface electronic structure of clean and hydrogen-chemisorbedSixGe1
Ku
¹
,
Nemanich
²

1996
Phys. Rev. B
4
0
3
0
View full text Add to dashboard Cite

Electric and Optical Properties of μc-Si,Ge:H Alloys Deposited by Reactive Magnetron Sputtering (RMS)

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Graded-base Si/Si/sub 1-x/Ge/sub x//Si heterojunction bipolar transistors grown by rapid thermal chemical vapor deposition with near-ideal electrical characteristics

Cited by 56 publications

References 10 publications

Comparison of Mesa- Etched and Ion- Implanted GexSi1-x Heterojunction Bipolar Transistors

Comparison of Mesa- Etched and Ion- Implanted GexSi1-x Heterojunction Bipolar Transistors

Surface electronic structure of clean and hydrogen-chemisorbedSixGe1Ku1, Nemanich2 1996Phys. Rev. B4030View full textAdd to dashboardCite

Electric and Optical Properties of μc-Si,Ge:H Alloys Deposited by Reactive Magnetron Sputtering (RMS)

Contact Info

Product

Resources

About

Comparison of Mesa- Etched and Ion- Implanted Ge_xSi_1-x Heterojunction Bipolar Transistors

Comparison of Mesa- Etched and Ion- Implanted Ge_xSi_1-x Heterojunction Bipolar Transistors

Surface electronic structure of clean and hydrogen-chemisorbedSixGe1
Ku
¹
,
Nemanich
²

1996
Phys. Rev. B
4
0
3
0
View full text Add to dashboard Cite