GPU-accelerated inline linearity correction: pixel-level dose correction (PLDC) for the MBM-1000

Zable, Harold; Matsumoto, Hironobu; Yasui, Kenichi; Ueba, Ryosuke; Nakayamada, Noriaki; Shirali, Nagesh; Masuda, Yukihiro; Pearman, Ryan; Fujimura, Aki

doi:10.1117/12.2281922

Cited by 7 publications

(8 citation statements)

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“…Thanks to its dose control by a fine pixel area smaller than the target pattern size, our MB mask writing systems can carry out PLDC within a reasonable write time. [18][19][20]43) In SVSB, the same fine area control results in impractically long write time due to massive shot counts. The PLDC has various SG0803-4 © 2023 The Japan Society of Applied Physics functions such as enhancing the lithographic process margin, correcting CD linearity, and improving pattern fidelity.…”

Section: Data-path and Correction Functionmentioning

confidence: 99%

Recent progress and future of electron multi-beam mask writer

Yasuda¹,

Nomura²,

Matsumoto³

et al. 2023

Jpn. J. Appl. Phys.

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In this paper, development of NuFlare Technology’s multi-beam (MB) mask writing system MBM-2000 series is reviewed, and future plans for the MBM series are discussed. The MB mask writing systems were designed on the basis of unique concepts suitable for high-volume production of leading-edge masks, i.e., high beam current density, a reliable beam blanking aperture array (BAA) system with a 50-keV single-stage acceleration optics, high-speed inline pixel-level dose correction, and a distinctive hardware system for charging effect reduction. The latest MB mask writing system, MBM-2000PLUS, achieves a high throughput of 8.7 hours in a 104×130 mm2 writing area for a 150 μC/cm2 resist thanks to a high beam current density of 3.2 A/cm2. In addition, a global position accuracy of 1.2 nm, a local position accuracy of 0.5 nm, and a local critical dimension uniformity of 0.61 nm are achieved. The BAA system has shown long-term stable operation for more than one year. The high productivity and writing accuracy realized by NuFlare Technology’s concepts will contribute to further miniaturization of semiconductors.

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Section: Data-path and Correction Functionmentioning

confidence: 99%

Recent progress and future of electron multi-beam mask writer

Yasuda¹,

Nomura²,

Matsumoto³

et al. 2023

Jpn. J. Appl. Phys.

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“…PLDC does not increase the mask write time, significantly shortens the overall mask turnaround time by eliminating off-line MPC, and produces superior mask quality especially for curvilinear masks. [150][151][152]…”

Section: Pixel-based Inline Dose Correction On Multibeam Mask Writers Will Be the Ultimate Mpc For Curvilinear Ilt Maskmentioning

confidence: 99%

Inverse lithography technology: 30 years from concept to practical, full-chip reality

Pang

2021

J. Micro/Nanopattern. Mats. Metro.

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In lithography, optical proximity and process bias/effects need to be corrected to achieve the best wafer print. Efforts to correct for these effects started with a simple bias, adding a hammer head in line-ends to prevent line-end shortening. This first-generation correction was called rule-based optical proximity correction (OPC). Then, as chip feature sizes continued to shrink, OPC became more complicated and evolved to a model-based approach. Some extra patterns were added to masks, to improve the wafer process window, a measure of resilience to manufacturing variation. Around this time, the concept of inverse lithography technology (ILT), a mathematically rigorous inverse approach that determines the mask shapes that will produce the desired on-wafer results, was introduced. ILT has been explored and developed over the last three decades as the next generation of OPC, promising a solution to several challenges of advanced-node lithography, whether optical or extreme ultraviolet (EUV). Today, both OPC and ILT are part of an arsenal of lithography technologies called resolution enhancement technologies. Since OPC and ILT both involve computation, they are also considered as part of computational lithography. We explore the background and history of ILT and detail the significant milestones that have taken full-chip ILT from an academic concept to a practical production reality.

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“…The multibeam mask (MBM) writers have enabled curvilinear mask writing. 11,12 With the wafer process windows known to improve substantially with free-form curvilinear inverse lithography technology (ILT), 2 representing and computing with curvilinear shapes in MDP has gained in importance. 13 File sizes and computational complexity have become an increasing concern for the mask industry in the curvilinear era, prompting the industry to develop a Semiconductor Equipment and Materials International (SEMI) standard.…”

Section: Introduction: Curvilinear Masks Representation Overviewmentioning

confidence: 99%

“…Mask data preparation (MDP) is a very crucial step in the mask making industry. The multibeam mask (MBM) writers have enabled curvilinear mask writing 11 , 12 . With the wafer process windows known to improve substantially with free-form curvilinear inverse lithography technology (ILT), 2 representing and computing with curvilinear shapes in MDP has gained in importance 13 .…”

Section: Introduction: Curvilinear Masks Representation Overviewmentioning

confidence: 99%

You do not need 1 nm contours for curvilinear shapes: pixel-based computing is the answer

Shendre,

Fujimura,

Niewczas

et al. 2023

J. Micro/Nanopattern. Mats. Metro.

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Enabled by multibeam mask writing, curvilinear free-form inverse lithography technology (ILT), and graphics processing unit acceleration, curvilinear masks are quickly becoming the norm in leading edge masks, whether for 193i or for extreme ultra violet (EUV), particularly for contact and via layers. An industry standard for compactly representing curvilinear shapes is being developed for Semiconductor Equipment and Materials International through an industry working group. Bezier and B-spline "Multigon" formats are proposed to augment the piecewise linear polygons that are supported today. Whether these infinite-resolution curvilinear formats are used or piecewise linear polygons are used, there is a question of what constitutes a high enough vertex density to be of some predefined accuracy requirement. With these infinite-resolution curvilinear formats, the vertex density would be lower than with piecewise linear polygons for a particular accuracy requirement. But it is still useful to know what density is theoretically sufficient. We explore the concept of rasterization and the mathematical dual between contours and pixel dose arrays given a particular known resolution limit. We further argue that curvilinear ILT, practically speaking, is all computed in the pixel domain. And all curvilinear masks, with the notable exception of MWCO masks for 193i, are written with multibeam machines using pixel dose arrays. We further argue that all images taken of the resulting masks, whether for inspection, disposition, or for metrology are pictures taken as pixel dose arrays of some resolution with some image processing afterward. Information theory is a branch of computer science that, among other things, gives insight on how much data are sufficient to represent any particular information content. Generally, the field covers the idea of digitizing the analog world to some known limit of resolution. Rasterization is digitalization of images that converts from contours, be it piecewise linear polygons, or some infinite resolution curves, to pixel doses of some pixel size and dose range. Contouring is the converse, going from pixel doses to geometric space. By understanding information theory, how curvilinear mask shapes are computed, and how curvilinear mask shapes are generated on the mask, we compute the theoretical limit of how much data are required to represent 193i and EUV curvilinear masks.

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GPU-accelerated inline linearity correction: pixel-level dose correction (PLDC) for the MBM-1000

Cited by 7 publications

References 0 publications

Recent progress and future of electron multi-beam mask writer

Recent progress and future of electron multi-beam mask writer

Inverse lithography technology: 30 years from concept to practical, full-chip reality

You do not need 1 nm contours for curvilinear shapes: pixel-based computing is the answer

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