Glue Layer Study of Inter Via between Cu and Al Metal Lines

Chen, John; Qiao, Cheney; Yang, Lin-hong; Chang, Kai

doi:10.1149/1.3567673

Cited by 1 publication

(1 citation statement)

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“…3. It was shown in [3] that, due to DIBL, an effective drive current, Ieff, needs to be used to calculate the actual delay of an inverter instead of Ion since the actual switching current could be significantly lower than the Ion. The value of Ieff is an averaged value of I high and I low .…”

Section: Device Characteristicsmentioning

confidence: 99%

Scaling MOSFETs with Self-aligned Super-Steep-Retrograded Halo (3SRH)

Wu¹,

Xiao²,

Zhu

et al. 2011

ECS Trans.

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In order to take the advantages of the replacement gate process, improve the control of SCE, and enhance the performance of CMOSFETs, a novel method of self-aligned super-steepretrograded halo (3SRH) implantation is designed and presented in this paper. With process and device simulations, it's demonstrated that 3SRH can be used to enhance MOSFET performance. IntroductionWith aggressively scaling MOSFET gate length, the control of short-channeleffect (SCE) of the MOSFET becomes more and more difficult. Halo implantations are usually used to improve SCE. The shorter gate length, the heavier halo dose is needed. However, the heavy halo dose or high halo dopant concentration reduces channel carrier mobility， increases extension resistance, and then causes large degradation of MOSFET performance.Recently, CMOSFETs with replacement gate have been implemented in the state of the art HKMG (high-K metal gate) 32nm technology node [1]. In order to take the advantages of the replacement gate process, improve the control of SCE, and enhance the performance of CMOSFETs, a novel method of self-aligned super-steep-retrograded halo (3SRH) implantation is designed and presented in this paper. Process and device simulations are conducted to demonstrate the benefits of device performance and scaling due to 3SRH.

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Section: Device Characteristicsmentioning

confidence: 99%