Glow discharge optical emission spectrometry for quantitative depth profiling of CIGS thin-films

Kodalle, Tim; Greiner, D.; Brackmann, Varvara; Prietzel, Karsten; Scheu, A.; Bertram, Tobias; Reyes-Figueroa, Pablo; Unold, Thomas; Abou‐Ras, Daniel; Schlatmann, Rutger; Kaufmann, Christian A.; Hoffmann, Volker

doi:10.1039/c9ja00075e

Cited by 34 publications

(20 citation statements)

References 37 publications

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“…Sheet resistance measurements by four-point probe were done on the AZO layers on top of the CIGSe solar cell stack. GD-OES using a Spectruma GDA 650 tool was applied to the samples in order to determine elemental in-depth profiles following the procedure described in [14]. The quantification of the GD-OES profiles was only possible for the CdS-buffered CIGSe devices, not for the GaO x -buffered CIGSe devices, since a calibration sample for GaO x was not available.…”

Section: Methodsmentioning

confidence: 99%

Elucidating the Effect of the Different Buffer Layers on the Thermal Stability of CIGSe Solar Cells

Yetkin

Kodalle

Bertram

et al. 2021

IEEE J. Photovoltaics

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In this contribution, the impact of thermal stress on Cu(In,Ga)Se 2 (CIGSe) thin film photovoltaic devices is investigated. The tolerance of such devices to high temperatures is of particular interest for processing transparent conductive oxides (TCOs) in order to further close the gap to the theoretical efficiency limit and for their potential use as bottom devices in tandem applications in order to overcome the theoretical efficiency limit of single junction solar cells. When CdS-buffered CIGSe high efficiency solar cells are subjected to thermal stress, elemental interdiffusion of Na and Cd between the absorber and the window layers as well as chemical reactions at the CIGSe/CdS interface result in a degraded power conversion efficiency (PCE). Here, we compare the degradation mechanisms of CdS and GaO x buffered CIGSe solar cells under thermal stress. A model explaining the observed degradation behaviors is proposed. Index Terms-Amorphous buffer layer, Cu(In,Ga)Se 2 (CIGSe) solar cells, CdS, thermal stability, GaO x. I. INTRODUCTION C u(In,Ga)Se 2 (CIGSe) thin film solar cells have attracted the attention of science and industry by attaining a maximum Manuscript

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Section: Methodsmentioning

confidence: 99%

Elucidating the Effect of the Different Buffer Layers on the Thermal Stability of CIGSe Solar Cells

Yetkin

Kodalle

Bertram

et al. 2021

IEEE J. Photovoltaics

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“…In Figure 8 they are compared to GDOES measurements on samples from the same production run. The depth resolution of GDOES measurements is determined by the curvature of the bottom of the sputtered crater and sputter induced roughening of the samples [ 8 ] and is typically 5 to 10% of the layer thickness [ 4 ].…”

Section: Resultsmentioning

confidence: 99%

“…GDOES was measured at the Helmholtz Zentrum Berlin by order of Avancis using a Spectrum Analytik GDA650 system (GmbH, Hof, Germany) in pulsed radio frequency (rf) mode on samples from the same production run. Details on the measurement, sputter parameters, and quantification procedure can be found in [ 8 ].…”

Section: Methodsmentioning

confidence: 99%

Analysis of Compositional Gradients in Cu(In,Ga)(S,Se)2 Solar Cell Absorbers Using Energy Dispersive X-ray Analysis with Different Acceleration Energies

2021

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The efficiency of Cu(In,Ga)(S,Se)2 (CIGSSe) solar cell absorbers can be increased by the optimization of the Ga/In and S/Se gradients throughout the absorber. Analyzing such gradients is therefore an important method in tracking the effectiveness of process variations. To measure compositional gradients in CIGSSe, energy dispersive X-ray analysis (EDX) with different acceleration energies performed at both the front surface and the backside of delaminated absorbers was used. This procedure allows for the determination of compositional gradients at locations that are millimeters apart and distributed over the entire sample. The method is therefore representative for a large area and yields information about the lateral homogeneity in the millimeter range. The procedure is helpful if methods such as secondary ion-mass (SIMS), time-of-flight SIMS, or glow-discharge optical emission spectrometry (GDOES) are not available. Results of such EDX measurements are compared with GDOES, and they show good agreement. The procedure can also be used in a targeted manner to detect local changes of the gradients in inhomogeneities or points of interest in the µm range. As an example, a comparison between the compositional gradients in the regular absorber and above the laser cut separating the Mo back contact is shown.

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“…In order to characterize the compositional in-depth gradients in the CIGSe absorber, glow-discharge optical emission spectrometry (GD-OES) measurements were performed at HZB and ZSW. The quantification was done following the procedure described in [10]. Current-voltage (jV)-measurements were performed under AM1.5 illumination at 25°C using a Wacom class AAA sun simulator at standard conditions.…”

Section: B Analytical Methodsmentioning

confidence: 99%

Realizing Double Graded CIGSe Absorbers With the R2R Hybrid-CIGSe-Process

Weinberger

Stock

Mesle

et al. 2021

IEEE J. Photovoltaics

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Glow discharge optical emission spectrometry for quantitative depth profiling of CIGS thin-films

Abstract: The article demonstrates how quantitative compositional depth profiles of Cu(In,Ga)(S,Se)2 layers can be utilized to determine their energy bandgap distribution.

Cited by 34 publications

References 37 publications

Elucidating the Effect of the Different Buffer Layers on the Thermal Stability of CIGSe Solar Cells

Elucidating the Effect of the Different Buffer Layers on the Thermal Stability of CIGSe Solar Cells

Analysis of Compositional Gradients in Cu(In,Ga)(S,Se)2 Solar Cell Absorbers Using Energy Dispersive X-ray Analysis with Different Acceleration Energies

Realizing Double Graded CIGSe Absorbers With the R2R Hybrid-CIGSe-Process

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