Global simulation of the induction heating TSSG process of SiC for the effects of Marangoni convection, free surface deformation and seed rotation

Yamamoto, Takuya; Okano, Yasunori; Ujihara, Toru; Dost, S.

doi:10.1016/j.jcrysgro.2017.04.016

Cited by 32 publications

(32 citation statements)

References 28 publications

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“…Crystals 2019, 9, 653 2 of 8 carbide crystal, revealing the relationship between the crystal interface stability and the fluid flow separation. According to the above study [9,10], we found that the crystal growth stability is closely related to the solution flow. In this paper, we used an appendix and positioned it on the graphite (rod) as an important step towards the interface stability of larger crystals.…”

Section: Numerical Analysismentioning

confidence: 87%

“…The main governing equations are shown below, and the detailed boundary conditions were introduced in a previous study [7,9]. In addition, the no-slip boundary condition and the same speed as the rod (20 rpm) are applied to the appendix.…”

Section: Materials Property (Symbol) Value Unitmentioning

confidence: 99%

“…Although some studies [9,10] have investigated the flow and temperature fields of different sizes of silicon carbide crystals, this study first repeats the flow field of a 4-inch silicon carbide crystal without an appendix to better illustrate the role of the appendix. Figure 2 shows the temperature field, flow field, and growth rate of the 4-inch silicon carbide ingot.…”

Section: Flow Field and Growth Rate Without The Appendixmentioning

confidence: 99%

“…Second, there are multiple complicated internal forces in the silicon solution, including electromagnetic forces caused by electromagnetic heating, thermal buoyancy caused by temperature differences, forced convection caused by rotation, and Marangoni forces caused by temperature differences at the gas-liquid interface. For this reason, many numerical simulation studies have been performed for the TSSG process of silicon carbide, and numerical simulation is a superior method for inspecting crystal growth [7][8][9][10].…”

Section: Introductionmentioning

confidence: 99%

“…Yamamoto et al [8] first established a three-dimensional model of TSSG and studied the relationship between the heating coil frequency and the fluid flow. Okano [9] studied the Marangoni forces around the 2-inch seed crystal flow field and observed the flow separation phenomenon under the seed crystal. Liu [10] simulated the dynamic growth of a 4-inch silicon carbide crystal, revealing the relationship between the crystal interface stability and the fluid flow separation.…”

Section: Introductionmentioning

confidence: 99%

See 4 more Smart Citations

Improvement of Growth Interface Stability for 4-Inch Silicon Carbide Crystal Growth in TSSG

Liu

Tang

et al. 2019

Crystals

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The growth interface instability of large-size SiC growth in top-seeded solution growth (TSSG) is a bottleneck for industrial production. The authors have previously simulated the growth of 4-inch SiC crystals and found that the interface instability in TSSG was greatly affected by the flow field. According to our simulation of the flow field, we proposed a new stepped structure that greatly improved the interface stability of large-size crystal growth. This stepped structure provides a good reference for the growth of large-sized SiC crystals by TSSG in the future.

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Section: Numerical Analysismentioning

confidence: 87%

Section: Materials Property (Symbol) Value Unitmentioning

confidence: 99%

Section: Flow Field and Growth Rate Without The Appendixmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Improvement of Growth Interface Stability for 4-Inch Silicon Carbide Crystal Growth in TSSG

Liu

Tang

et al. 2019

Crystals

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Optimization of Flow Distribution by Topological Description and Machine Learning in Solution Growth of SiC

Isono

Harada

Kutsukake

et al. 2022

Advcd Theory and Sims

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The macroscopic distribution of fluid flows, which affect the quality of final products for various kinds of materials, is often difficult to describe in mathematical formulae and hinders the implementation of empirical knowledge in scaling up. In the present study, the characteristics of the flow distribution in silicon carbide (SiC) solution growth are described by using the position of the saddle point and the solution growth conditions are optimized by computational fluid dynamics simulation, machine learning, and a genetic algorithm. As a result, the candidates of the optimal condition for the solution growth of 6-in. SiC crystals are successfully obtained from the empirical knowledge gained from 3-in. crystal growth, by adding the topological description to the objective function. The present design of the objective function using the topological description can possibly be applied to other crystal growth or materials processing problems and to overcome scale-up difficulties, which can facilitate the rapid development of functional materials such as SiC wafers for power device applications. . IntroductionFluid flow that arises in many materials processing techniques, such as crystal growth, casting, thin film fabrication, and polymer processing, is critical to the quality and characteristics of the final product and optimization of the system. [1] Recent advances in computational fluid dynamics (CFD) aid in the design of suitable conditions for materials processing. [2] Furthermore, the

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The Effect of Crucible Rotation and Crucible Size in Top‐Seeded Solution Growth of Single‐Crystal Silicon Carbide

Horiuchi

Wang

Sekimoto

et al. 2019

Crystal Research and Technology

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The top‐seeded solution growth method is a promising technique for growing high‐quality silicon carbide single crystal. Some inherent issues in this growth process, such as morphological instability, polycrystalline growth, and low growth rate, should be clarified. A high temperature difference between the seed and the crucible wall in this system is needed to enhance growth. However, such a high temperature gradient makes the radial growth rate profile non‐uniform due to the effect of Marangoni convection below the seed crystal, which leads to poor crystal quality. In the present work, the effects of crucible size and crucible rotation are numerically investigated to minimize the effect of Marangoni convection. The possibilities of the occurrence of growth‐rate non‐uniformity and undesired impurity incorporation are examined. A smaller crucible (in radius) leads to a more uniform growth rate profile. However, it gives rise to a higher possibility of impurity incorporation. It is also predicted that crucible rotation is ineffective in suppressing the Marangoni flow near the seed edge. This leads to a flow stagnation in the center of the melt, and consequently, it does not enhance the carbon transport below the seed. It also does not reduce the possibility of undesired impurity incorporation.

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Global simulation of the induction heating TSSG process of SiC for the effects of Marangoni convection, free surface deformation and seed rotation

Cited by 32 publications

References 28 publications

Improvement of Growth Interface Stability for 4-Inch Silicon Carbide Crystal Growth in TSSG

Improvement of Growth Interface Stability for 4-Inch Silicon Carbide Crystal Growth in TSSG

Optimization of Flow Distribution by Topological Description and Machine Learning in Solution Growth of SiC

The Effect of Crucible Rotation and Crucible Size in Top‐Seeded Solution Growth of Single‐Crystal Silicon Carbide

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