Improvement of Growth Interface Stability for 4-Inch Silicon Carbide Crystal Growth in TSSG

Liu, Botao; Yu, Yue; Tang, Xia; Gao, Bing

doi:10.3390/cryst9120653

Cited by 3 publications

(3 citation statements)

References 18 publications

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“…Therefore, a more uniform growth rate in the radial direction is achieved. Liu et al [137] optimized length ratio of the graphite appendix to the seed to obtain a higher growth rate. Yoon et al [138] enhanced the growth rate from 53 µm•h -1 to 67 µm•h -1 with a slight decrement of FWHM, by roughening the surface of the graphite via TSSG.…”

Section: Structure Of Graphite Componentsmentioning

confidence: 99%

Review of solution growth techniques for 4H-SiC single crystal

Liang

Qian

et al. 2023

China Foundry

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The third-generation semiconductor silicon carbide (SiC) has the characteristics of the wide band gap, high electric breakdown voltage, large saturated drift velocity, and high thermal conductivity, which are favorable for power devices under high-voltage, high temperature, and high-frequency scenarios [1,2] . Automotive applications are expected to remain a primary market for SiC power segments since they are one of the main drivers of the total power electronics market. The overall market for SiC devices is expected to exceed US$2.5 billion by 2025, with a compound annual

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Section: Structure Of Graphite Componentsmentioning

confidence: 99%

Review of solution growth techniques for 4H-SiC single crystal

Liang

Qian

et al. 2023

China Foundry

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“…Therefore, many analysts conduct research and development work on SiC crystal growth. The preparation of SiC crystals with the solution method has broad prospects but faces practical problems [ 6 , 7 , 8 ]. For example, because of the high melting point of SiC, adding a flux agent will cause inclusions and dislocations, and the continuous supply of carbon components remains unsolved.…”

Section: Introductionmentioning

confidence: 99%

Design and Optimization of Thermal Field for PVT Method 8-Inch SiC Crystal Growth

Zhang

Cai

et al. 2023

Materials

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As a wide bandgap semiconductor material, silicon carbide has promising prospects for application. However, its commercial production size is currently 6 inches, and the difficulty in preparing larger single crystals increases exponentially with size increasing. Large-size single crystal growth is faced with the enormous problem of radial growth conditions deteriorating. Based on simulation tools, the physical field of 8-inch crystal growth is modeled and studied. By introducing the design of the seed cavity, the radial temperature difference in the seed crystal surface is reduced by 88% from 93 K of a basic scheme to 11 K, and the thermal field conditions with uniform radial temperature and moderate temperature gradient are obtained. Meanwhile, the effects of different processing conditions and relative positions of key structures on the surface temperature and axial temperature gradients of the seed crystals are analyzed in terms of new thermal field design, including induction power, frequency, diameter and height of coils, the distance between raw materials and the seed crystal. Meanwhiles, better process conditions and relative positions under experimental conditions are obtained. Based on the optimized conditions, the thermal field verification under seedless conditions is carried out, discovering that the single crystal deposition rate is 90% of that of polycrystalline deposition under the experimental conditions. Meanwhile, an 8-inch polycrystalline with 9.6 mm uniform deposition was successfully obtained after 120 h crystal growth, whose convexity is reduced from 13 mm to 6.4 mm compared with the original scheme. The results indicate that the optimized conditions can be used for single-crystal growth.

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“…Owing to its superior physical properties such as wide bandgap, high thermal conductivity, and critical breakdown electric field [1][2][3], single crystal silicon carbide (SiC) has became an ideal wafer material for next-generation microelectronic and photoelectronic devices [4][5][6], which necessitates a damage free surface and subsurface quality of SiC wafers. However, SiC is hard and brittle and prone to fracture [7][8][9], and grinding remains to be the most common, if not irreplaceable, technology to planarize SiC substrates for successive polishing.…”

Section: Introductionmentioning

confidence: 99%

Effects of Depth of Cutting on Damage Interferences during Double Scratching on Single Crystal SiC

Duan

2020

Crystals

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In this work, the damage interference during scratching of single crystal silicon carbide (SiC) by two cone-shaped diamond grits was experimentally investigated and numerically analyzed by coupling the finite element method (FEM) and smoothed particle hydrodynamics (SPH), to reveal the interference mechanisms during the micron-scale removal of SiC at variable Z-axis spacing along the depth of cutting (DOC) direction. The simulation results were well verified by the scratching experiments. The damage interference mechanism of SiC during double scratching at micron-scale was found to be closely related to the material removal modes, and can be basically divided into three stages at different DOCs: combined interference of plastic and brittle removal in the case of less than 5 µm, interference of cracks propagation when DOC was increased to 5 µm, and weakened interference stage during the fracture of SiC in the case of greater than 5 µm. Hence, DOC was found to play a determinant role in the damage interference of scratched SiC by influencing the material removal mode. When SiC was removed in a combined brittle-plastic mode, the damage interference occurred mainly along the DOC direction; when SiC was removed in a brittle manner, the interference was mainly along the width of cutting; and more importantly, once the fragment of SiC was initiated, the interference was weakened and the effect on the actual material removal depth also reduces. Results obtained in this work are believed to have essential implications for the optimization of SiC wafer planarization process that is becoming increasingly important for the fabrication of modern electronic devices.

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Improvement of Growth Interface Stability for 4-Inch Silicon Carbide Crystal Growth in TSSG

Cited by 3 publications

References 18 publications

Review of solution growth techniques for 4H-SiC single crystal

Review of solution growth techniques for 4H-SiC single crystal

Design and Optimization of Thermal Field for PVT Method 8-Inch SiC Crystal Growth

Effects of Depth of Cutting on Damage Interferences during Double Scratching on Single Crystal SiC

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