Global simulation of a Czochralski furnace for silicon crystal growth against the assumed thermophysical properties

Li, Y. R.; Yu, Chung-tang; Wu, Shuang–Ying; Peng, Lan; Imaishi, Nobuyuki

doi:10.1002/crat.200510642

Cited by 3 publications

(3 citation statements)

References 21 publications

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“…In this work, the fluid is the silicon melt and all physical properties are presented in Table . The dimensionless parameters are R s = 0.3, H = 0.06, R ad = 0.067, and Θ a = 0.95, as reported by Li et al .…”

Section: Problem Statementmentioning

confidence: 99%

Numerical Simulation on Effect of Rotation on Thermal Convection in a Shallow Model Czochralski Configuration with a Heated Bottom

Shen

2018

Crystal Research and Technology

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This paper presents a set of numerical simulations on the effect of rotation on thermal convection in a shallow model Czochralski configuration with a heated crucible bottom. Results show that when the bottom is heated by low heat flux, the temperature fluctuation can be significantly weakened and the melt can be kept from solidifying. Once the heat flux exceeds a threshold value, the thermocapillary convection will transit to the Benard-Marangoni convection. The temperature fluctuation is amplified by increasing crystal rotation rate or heat flux. The crystal rotation can restrain the azimuthal traveling of the waves. However, the propagating direction of the waves is related to the temperature gradient and the crucible rotation, and is independent of the crystal rotation. The wavenumber is reduced by the crystal rotation individually. Furthermore, the crucible rotation can reduce the effect of the crystal rotation on the wavenumber.

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Section: Problem Statementmentioning

confidence: 99%

Numerical Simulation on Effect of Rotation on Thermal Convection in a Shallow Model Czochralski Configuration with a Heated Bottom

Shen

2018

Crystal Research and Technology

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“…The impact of silicon crystal and melt properties on the process has been investigated in several studies [12,13]. However, to the authors' knowledge, the contribution of uncertainties associated with furnace material properties has yet to be addressed.…”

Section: Introductionmentioning

confidence: 99%

Sensitivity analyses of furnace material properties in the Czochralski crystal growth method for silicon

Noghabi¹,

M’Hamdi²,

Jomâa³

2012

Meas. Sci. Technol.

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Reliability of the numerical simulation results strongly depends on the input data, in particular on the thermo-physical properties of the furnace components, e.g. graphite thermal conductivity and steel surface emissivity. Uncertainties are always involved in the measurement of these parameters. A set of global 2D simulations has been carried out in order to investigate the impact of each property on the growth conditions in Czochralski silicon growth furnaces. The results indicate that steel emissivity and felt conductivity have significant impact on the calculated thermal field and energy consumption.

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“…A set of global numerical simulations based on laminar, axisymmetric and pseudo steady model of a silicon Czochralski furnace was conducted to reveal the influence of the temperature coefficient of surface tension on flow pattern and oxygen transport by Li et al (2004). In order to understand the effects of the thermophysical properties of the melt on the transport phenomena in the Czochralski furnace for the single crystal growth of silicon, a set of global analyses of momentum, heat and mass transfer in small Czochralski furnace was carried out using the finite element method by Li et al (2006).…”

Section: Introductionmentioning

confidence: 99%

Transition from the Steady to the Oscillatory Thermocapillary Convection in a Rectangular Container Under Various Cold Wall Temperature Effects

Selver

Kati

2010

Microgravity Sci. Technol.

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The transition from the steady to the oscillatory thermocapillary flow of high Prandtl number fluid in the rectangular container configuration under various cold wall temperatures effects have been studied experimentally. The fluid is heated by a thin wire placed along the free surface. The effects of buoyancy on the transport phenomenon are carefully assessed. The thermocapillary flow field is described based on a flow visualization and temperature measurement. The critical temperature difference for the onset of oscillations varies when the cold wall temperature is varied. The heat loss at the liquid free surface is identified to be responsible for this effect.

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Global simulation of a Czochralski furnace for silicon crystal growth against the assumed thermophysical properties

Cited by 3 publications

References 21 publications

Numerical Simulation on Effect of Rotation on Thermal Convection in a Shallow Model Czochralski Configuration with a Heated Bottom

Numerical Simulation on Effect of Rotation on Thermal Convection in a Shallow Model Czochralski Configuration with a Heated Bottom

Sensitivity analyses of furnace material properties in the Czochralski crystal growth method for silicon

Transition from the Steady to the Oscillatory Thermocapillary Convection in a Rectangular Container Under Various Cold Wall Temperature Effects

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