Global modeling of nonlinear circuits using the finite‐difference Laguerre time‐domain/alternative direction implicit finite‐difference time‐domain method with stability investigation

Abstract

SUMMARY This paper describes a new unconditionally stable numerical method for the full‐wave physical modeling of semiconductor devices by a combination of the finite‐difference Laguerre time‐domain (FDLTD) and alternative direction implicit finite‐difference time‐domain (ADI‐FDTD) approaches. The unconditionally stable method by using FDLTD scheme for the electromagnetic model and semi‐implicit ADI‐FDTD approach for the active model leads to a significant decrease in the full‐wave simulation time. Numerical simulations of an example transistor and a power amplifier show the efficiency of presented method for the full‐wave simulation of mm‐wave active circuits. Copyright © 2012 John Wiley & Sons, Ltd.

Large-signal distributed millimeter-wave multifinger pHEMT modeling using time-domain technique

“…Another available method which accurately accounts for wave propagation is based on a full‐wave approach. This analytical approach is essentially based on numerically solving the coupled Maxwell's electromagnetic equations and semiconductor equations . Although potentially accurate, full‐wave based models extraction is time consuming and this analysis approach needs more attention for implementing in simulation software.…”

“…This analytical approach is essentially based on numerically solving the coupled Maxwell's electromagnetic equations and semiconductor equations. [15][16][17] Although potentially accurate, full-wave based models extraction is time consuming and this analysis approach needs more attention for implementing in simulation software. Thus, it cannot be easily integrated with CAD optimizers.…”