1998
DOI: 10.1016/s0924-4247(98)00011-9
|View full text |Cite
|
Sign up to set email alerts
|

Global model generation for a capacitive silicon accelerometer by finite-element analysis

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3
1
1

Citation Types

0
5
0

Year Published

1998
1998
2005
2005

Publication Types

Select...
4
1

Relationship

0
5

Authors

Journals

citations
Cited by 8 publications
(5 citation statements)
references
References 4 publications
0
5
0
Order By: Relevance
“…For an acceleration sensor, capacitive or optical detection can be implemented. The mass with horizontally located beams could be sensed as a conventional differential capacitance, while the two lateral structures could be sensed capacitively with comb-shaped electrodes [4]. A 3D accelerometer system with optical detection can be fabricated by building three Fabry-Pérot interferometers.…”
Section: Discussionmentioning
confidence: 99%
“…For an acceleration sensor, capacitive or optical detection can be implemented. The mass with horizontally located beams could be sensed as a conventional differential capacitance, while the two lateral structures could be sensed capacitively with comb-shaped electrodes [4]. A 3D accelerometer system with optical detection can be fabricated by building three Fabry-Pérot interferometers.…”
Section: Discussionmentioning
confidence: 99%
“…In [11], Ansel et al consider a seismic acceleration sensor as a harmonic oscillator. For the modelling a linear differential equation is used for the force f and the deflection x:…”
Section: Identification Of a Harmonic Oscillatormentioning
confidence: 99%
“…A whole range of approaches extract the main corner-stones of the behaviour of a component from measurements or simulations using finite elements and use this for simple models consisting of few equations, see for example Ansel et al [11], Hofmann et al [149], [150], Karam et al [179] and Nagel et al [292]. In what follows three approaches will be considered that aim in the aforementioned direction.…”
Section: Introductionmentioning
confidence: 99%
“…One is fabricated in a (110) wafer with vertical {111} sidewalls as shown in figure 1(b) [2]. Another is formed in a (100) wafer along the 100 direction with {100} vertical sidewalls as shown in figure 1(c) [3]. In either examples [2,3], a capacitive sensing scheme is utilized.…”
Section: Introductionmentioning
confidence: 99%
“…Another is formed in a (100) wafer along the 100 direction with {100} vertical sidewalls as shown in figure 1(c) [3]. In either examples [2,3], a capacitive sensing scheme is utilized.…”
Section: Introductionmentioning
confidence: 99%