Collective wet etching of a 3D monolithic silicon seismic mass system

Schropfer, G.; Labachelerie, M. de; Ballandras, S.; Blind, P.

doi:10.1088/0960-1317/8/2/008

Cited by 18 publications

(19 citation statements)

References 5 publications

(7 reference statements)

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“…With (100) wafer, diverse MEMS devices such as accelerometer [44][45][46][47][48], micro optical clips [49][50], acoustic transducers [51], and scanning micro mirrors [52][53] have been fabricated. The reason that (100) wafer is preferred lies in the orientations of (111) planes in it.…”

Section: Wet Etching Of (100) Silicon Wafermentioning

confidence: 99%

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Ultrasonic Transducers

2014

Ultrasonic Technology for Desiccant Regeneration

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Section: Wet Etching Of (100) Silicon Wafermentioning

confidence: 99%

“…With (100) wafer, not only flat beams, oblique or even vertical beams are also obtainable [46][47][48]. Fig.…”

Section: Figure 44 Comparison Of Normal (Left) and Irregular Undercumentioning

confidence: 99%

Ultrasonic Transducers

2014

Ultrasonic Technology for Desiccant Regeneration

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“…The first use of anisotropic chemical wet etching on silicon substrates was in the sixties [171] and after that, it was applied to fabricate power transistors [172]. Nowadays, its usage is much extended due to its low cost, the capability of batch processing, and the possibility of fabricating complex structures exclusively with chemical wet etching, such as microprobes [141,173], accelerometers [142], microneedles [174] or microchannels for microfluids applications [175].…”

Section: Anisotropic Wet Etchingmentioning

confidence: 99%

“…3.3 shows a comparison of a surface reconstructed by both schemes when they are applied 90 with the same conditions and for the same number of iterations. For comparison, an accelerometer structure has been chosen [142]. As can be observed, although the result of first-order derivatives looks softer and less accurate, both are very similar.…”

Section: Original Lsmentioning

confidence: 99%

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Study, Modelling and Implementation of the Level Set Method Used in Micromachining Processes

Álvaro¹

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"Sí com lo taur se'n va fuyt pel desert quantés sobrat per son semblant qui·l força, ne torna may fins ha cobrada força per destruir aquell qui l'ha desert: tot enaxí·m cové lunyar de vós, car vostre gest mon esforç ha confús: no tornaré fins del tot haja fus la gran pahor qui·m toll ser delitós." Ausiàs March, 1397 - †1459 Per a Marc AgradecimientosSin duda, todo el trabajo que hay detrás de esta tesis ha sido posible gracias a la colaboración y dedicación de muchos. Todos ellos merecen ser agradecidos por haber contribuido a su manera en la culminación de este trabajo.Agradecer sinceramente a mis directores y tutores, Ximo Cerdà y Ricardo Colom, por permitir formarme como investigador y ofrecerme sus consejos. Ellos me han tratado con respeto y nunca han puesto freno a mis ambiciones, más bien las han engrandecido. Gracias por guiar toda esta aventura.Una mención muy especial se merecen MiguelÁngel Gosálvez y Néstor Ferrando. Les tengo que agradecer la gran suerte que he tenido de poder colaborar con dos eminencias como ellos. Sus grandes conocimientos han permitido obtener los mejores resultados de este trabajo, además de haber sido una experiencia gratificante. Gracias por su constante apoyo y su ayuda infinita.Asimismo, dar las gracias también a Vicente Herrero, Jose María Monzó, Ana Ros y Ramón J. Aliaga. Ellos dieron vida a un ambiente de trabajo idóneo, aportándome mucho más que ayuda y conocimientos. Del mismo modoÁngel Tébar, Rafael Gadea y Jorge Daniel siempre han estado dispuestos a ayudar en todo cuanto han podido.Mi estancia en el instituto Fraunhofer de Erlangen me ha permitido acelerar mi formación y vivir unas experiencias de lo más satisfactorias. Todo ello ha sido gracias a la magnífica gente con la que he tenido el placer de colaborar y convivir. Gracias a Eberhard Bär y a toda la incontable gente del Fraunhofer IISB.Un mérito especial se merecen mi familia y mis amigos por aguantarme todo este tiempo sin perder la paciencia conmigo ni en los peores momentos. Es de un valor incalculable tener tantos hombros en los que poder dejarte caer para coger las fuerzas suficientes para seguir. Gracias Isidor y Lourdes, gracias Ferran y Andreu, y gracias Vicente, Enric y David.iii No podía faltar mi particular aimia, Nuria.Ella se merece un eterno agradecimiento por haber tenido que vivir todo esto conmigo. Compañera de todas y cada una de las experiencias, buenas y malas, de esta larga aventura. Animándome en todo momento, siempre ayudándome con un altruismo deslumbrante y enseñándome una inmensidad de conocimientos. Ella, ha sido y es, mi llir entre cards.Una vez más, muchísimas gracias a todos. iv SummaryThe main topic of the present thesis is the improvement of fabrication processes simulation by means of the Level Set (LS) method. The LS is a mathematical approach used for evolving fronts according to a motion defined by certain laws. The main advantage of this method is that the front is embedded inside a higher dimensional function such that updating this function instead of directly the front it...

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A new pre-etching pattern to determine 〈110〉 crystallographic orientation on both (100) and (110) silicon wafers

Chang

Huang

2005

Microsystem Technologies

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Since the etching rate of anisotropic wet etching of silicon is highly orientation-dependent, it is important to determinate the crystallographic orientation before etching. In this paper, a new mask pattern based on the pre-etching process is designed to find out the h110i crystal orientation on both (100) and (110) silicon wafers observably and to align the subsequent masks more easily and conveniently. Because of a compensation of the quantization error due to the limitated scanning resolution of a mask generator and an optimum design, a pre-etching mask pattern with a resolution of 0.00625°and a span angle of ±2°is achieved with a consumption area of 560 · 14,472 lm 2 . To evaluate the precision of the misorientation angle determined by the pre-etching process based on the proposed pattern, both (100) and (110) wafers with 60 pre-etching patterns on each of them were etched. After statistic analysis, the precision of ±0.0467°f or (100) wafers and ±0.025°for (110) wafers are achieved in our experiments which suggest the precision of determination of the crystallographic misorientation by the preetching process may be limited even though the resolution of the pre-etching mask pattern is high.

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Collective wet etching of a 3D monolithic silicon seismic mass system

Cited by 18 publications

References 5 publications

Ultrasonic Transducers

Ultrasonic Transducers

Study, Modelling and Implementation of the Level Set Method Used in Micromachining Processes

A new pre-etching pattern to determine 〈110〉 crystallographic orientation on both (100) and (110) silicon wafers

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