Global analysis of GaN growth using a solution technique

Growth of bulk GaN crystal by Na flux method under various conditions

“…Some approaches such as hydride vapor phase epitaxy (HVPE) [1][2][3], ammonothermal growth [4][5][6], high pressure solution growth [7][8][9], and Na flux methods [10][11][12][13][14][15][16][17][18][19][20][21][22][23][24][25][26][27][28] have been developed to realize the bulk GaN crystals. HVPE method is the most common technique accepted in the industry because of its high growth rates ( 4200-300 mm/h).…”

Growth of GaN crystals by Na flux LPE method

“…High‐quality and low‐cost bulk crystals are needed in the field of group III nitride semiconductors in order to develop optical and electrical devices with enhanced performances. Some approaches such as hydride vapor phase epitaxy (HVPE) 1–3, ammonothermal growth 4–6, high‐pressure solution growth 7–9, and Na flux methods 10–25 have been developed to realize the bulk GaN crystals. HVPE method is the most common technique accepted in the practical market because of the high growth rate (>200–300 µm/h).…”

High-Pressure, High-Temperature Solution Growth and Ammonothermal Synthesis of Gallium Nitride Crystals

“…In the ammonothermal and sodium flux growth methods, these velocities are at least one order of magnitude faster [48,49]. We believe that some changes in the metallic solution properties should be carried out.…”